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FDG327NZ April 2005 FDG327NZ 20V N-Channel PowerTrench(R) MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. Features * 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V. RDS(ON) = 100 m @ VGS = 2.5 V RDS(ON) = 140 m @ VGS = 1.8 V * Fast switching speed * Low gate charge * High performance trench technology for extremely low RDS(ON) * High power and current handling capability. Applications * DC/DC converter * Power management * Load switch S D D G Pin 1 D D SC70-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 8 (Note 1a) Units V A W C 1.5 6 0.42 0.38 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 300 333 C/W Package Marking and Ordering Information Device Marking .37 Device FDG327NZ Reel Size 7'' Tape width 8mm Quantity 3000 units (c)2005 Fairchild Semiconductor Corporation FDG327NZ Rev C(W) FDG327NZ Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min Typ 20 11 Max Units V mV/C Off Characteristics ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 8 V, VGS = 0 V VDS = 0 V 1 10 A A On Characteristics VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 1.5 A VGS = 2.5 V, ID = 1.4 A VGS = 1.8 V, ID = 1.2 A VGS = 4.5 V, ID = 1.5 A, TJ =125C VGS = 4.5V, VDS = 5 V VDS = 10 V, ID = 1.5 A 0.4 0.7 -2 68 77 90 86 1.5 V mV/C 90 100 140 123 m 3 2.2 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 10 V, f = 1.0 MHz V GS = 0 V 412 81 44 1.9 pF pF pF VGS = 15 mV, f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 13 12 33 18 23 22 53 20 6 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 1.5 A, 4.2 0.4 1 Drain-Source Diode Characteristics and Maximum Ratings VSD trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IF = 1.5 A, IS = 0.32 A (Note 2) 0.6 4 2 1.2 V nS nC diF/dt = 100 A/s Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 300C/W when mounted on a 1in2 pad of 2 oz copper. b) 333C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDG327NZ Rev C(W) FDG327NZ Typical Characteristics 10 1.8V ID, DRAIN CURRENT (A) 8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS= 4.5V 2.5V V 1.8 2.0V VGS=1.5V 1.6 6 1.4 1.8V 2.0V 1.5V 4 1.2 2.5V 3.0V 2 1 4.5V 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.8 0 2 4 6 8 10 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.22 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o ID = 1.5A VGS = 4.5V ID = 0.8A 0.17 TA = 125oC 0.12 TA = 25oC 0.07 0.02 125 150 0.5 1.5 2.5 3.5 4.5 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 25 C IS, REVERSE DRAIN CURRENT (A) VDS = 5.0V ID, DRAIN CURRENT (A) 8 TA = -55oC o VGS = 0V 1 TA = 125oC 25oC -55oC 125 C 6 o 0.1 4 0.01 2 0.001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG327NZ Rev C(W) FDG327NZ Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) 600 ID = 1.5A 4 VDS = 5V 10V CAPACITANCE (pF) 500 f = 1 MHz VGS = 0 V CISS 3 15V 400 300 200 2 COSS 100 1 CRSS 0 0 1 2 3 4 5 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 Figure 8. Capacitance Characteristics. 20 ID, DRAIN CURRENT (A) 1 100s 1ms 10ms 100ms 1s 10s DC P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT SINGLE PULSE RJA = 333C/W TA = 25C 15 10 0.1 VGS = 4.5V SINGLE PULSE RJA = 333oC/W TA = 25oC 5 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t) * RJA RJA = 333 C/W P(pk) t1 t2 SINGLE PULSE 0.02 0.01 o 0.2 0.1 0.1 0.05 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDG327NZ Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 |
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