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May 2006 May 2006
FDMA2002NZ Dual N-Channel PowerTrench(R) MOSFET
FDMA2002NZ
Dual N-Channel PowerTrench(R) MOSFET
General Description
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
* 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 V RDS(ON) = 140 m @ VGS = 3.0 V RDS(ON) = 163 m @ VGS = 2.5 V * Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm * RoHS Compliant
PIN 1 S1 G1 D1 D2
D2 S1 G1 D2
1 2 3
6 5 4
D1 G2 S2
D1 G2 S2
MicroFET 2x2
Absolute Maximum Ratings
Symbol
VDS VGS ID Drain-Source Voltage Gate-Source Voltage
TA=25oC unless otherwise noted
Parameter
Ratings
30 12 2.9 2.7 10
(Note 1a) (Note 1b)
Units
V V A
Drain Current - Continuous (TC = 25C, VGS = 4.5V) - Continuous (TC = 25C, VGS = 2.5V) - Pulsed
PD TJ, TSTG
Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Temperature
1.5 0.65 -55 to +150 W C
Thermal Characteristics
RJA RJA RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b) (Note 1c) (Note 1d)
83 (Single Operation) 193 (Single Operation) 68 (Dual Operation) 145 (Dual Operation) C/W
Package Marking and Ordering Information
Device Marking 002
(c)2006 Fairchild Semiconductor Corporation
Device FDMA2002NZ
Reel Size 7''
Tape width 8mm
Quantity 3000 units
FDMA2002NZ Rev B(W)
FDMA2002NZ Dual N-Channel PowerTrench(R) MOSFET
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current
Test Conditions
ID = 250 A VGS = 0 V, ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 12 V, VGS = 0 V VDS = 0 V
Min Typ Max Units
30 25 1 10 V mV/C A A
Off Characteristics
On Characteristics
VGS(th) VGS(th) TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 4.5V, ID = 2.9A VGS = 3.0V, ID = 2.7A VGS = 2.5V, ID = 2.5A VGS = 4.5V, ID = 2.9A, TC = 85C VGS = 3.0V, ID = 2.7A, TC = 150C VGS = 2.5V, ID = 2.5A, TC = 150C 0.4 1.0 -3 75 84 92 95 138 150 123 140 163 166 203 268 1.5 V mV/C
RDS(on)
Static Drain-Source On-Resistance
m
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
190 30 20
220 40 30
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
6 8 12 2
12 16 21 10 3.0
ns ns ns ns nC nC nC
VDS = 15 V, VGS = 4.5 V
ID = 2.9 A,
2.4 0.35 0.75
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge IS = 2.0 A IS = 1.1 A IF = 2.9 A, dIF/dt = 100 A/s 0.9 0.8 10 2 2.9 1.2 1.2 A V ns nC
FDMA2002NZ Rev B(W)
FDMA2002NZ Dual N-Channel PowerTrench(R) MOSFET
Electrical Characteristics
TA = 25C unless otherwise noted
Notes: 2 1. RJA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) RJA = 83C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) RJA = 193C/W when mounted on a minimum pad of 2 oz copper (d) RJA = 145C/W when mounted on a minimum pad of 2 oz copper (c) RJA = 68C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
a) 83oC/W when mounted on a 1in2 pad of 2 oz copper
b) 193oC/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDMA2002NZ Rev B(W)
FDMA2002NZ Dual N-Channel PowerTrench(R) MOSFET
Typical Characteristics
10
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 4.5V 2.5V
1.8
VGS = 2.0V
ID, DRAIN CURRENT (A)
8
3.5V
1.6
2.7V 2.9V 2.0V
6
1.4
4
1.2
2.5V
2.7V
2.9V
3.5V
4.0V
4.5V
2
1.5V
1
0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3
0.8 0 2 4 6 ID, DRAIN CURRENT (A) 8 10
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.24 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50
ID = 2.9A VGS = 4.5V
ID = 1.45A
0.2
0.16
TA = 125 C
o
0.12
0.08
TA = 25 C
o
0.04
-25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
0
2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with Temperature.
10
125 C
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 -IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
TA = -55 C
o
VGS = 0V
o
ID, DRAIN CURRENT (A)
8
25oC
10
1
6
0.1
TA = 125 C 25oC -55oC
o
4
0.01
2
0.001
0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDMA2002NZ Rev B(W)
FDMA2002NZ Dual N-Channel PowerTrench(R) MOSFET
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V)
ID = 2.9A
300
f = 1MHz VGS = 0 V
250 8 CAPACITANCE (pF)
VDS = 10V 20V
200
Ciss
6
15V
150
4
100
Coss
2
50
Crss
0 0 1 2 3 4 Qg, GATE CHARGE (nC) 5 6
0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W) 15
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
12
SINGLE PULSE RJA = 193C/W TA = 25C
10
RDS(ON) LIMIT
100us 10ms 1ms 100ms 1s
9
1
10s DC VGS = 4.5V SINGLE PULSE o RJA = 193 C/W TA = 25 C
o
6
0.1
3
0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100
0 0.0001
0.001
0.01
0.1 1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5
RJA(t) = r(t) * RJA RJA =193C/W P(pk) t1 t2
SINGLE PULSE
0.2
0.1
0.1 0.05 0.02 0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.01 0.0001 0.001 0.01 0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDMA2002NZ Rev B(W)
FDMA2002NZ Dual N-Channel PowerTrench(R) MOSFET
FDMA2002NZ Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) FASTrTM ActiveArrayTM FPSTM BottomlessTM FRFETTM Build it NowTM GlobalOptoisolatorTM CoolFETTM GTOTM CROSSVOLTTM HiSeCTM DOMETM I2CTM EcoSPARKTM i-LoTM E2CMOSTM ImpliedDisconnectTM EnSignaTM IntelliMAXTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I19
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production

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