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Ordering number:ENN6220
NPN Epitaxial Planar Silicon Composite Transistor
FH202
VCO OSC Circuit Applications
Features
* Composite type with a buffer transistor (2SC5226) and a oscillator transistors (TS4162) contained in the currently provided MCP package as a VCO oscillator, improving the mounting efficiency greatly. * The FH202 is formed with two chips, being equivalent to the 2SC5245 and TS4162, placed in one package. * Optimal for use in oscillator circuit for VHF to UHF band.
Package Dimensions
unit:mm 2160
[FH202]
0.425
0.15
6
5
4
1.25 2.1
0 to 0.1
0.2 0.425
12 0.65 2.0
3
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Tr1 [2SC5226] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Tr2 [TS4162] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation [Common specifications] Total Dissipation Junction Temperature Storage Temperature PT Tj Tstg VCBO VCEO VEBO IC PC VCBO VCEO VEBO IC PC Symbol Conditions
0.9
Ratings 20 10 2 70 150 20 12 2 50 150 200 150 -55 to +150
0.2
0.25
1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6
Unit V V V mA mW V V V mA mW mW C C
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0199TS (KOTO) TA-1708 No.6220-1/9
FH202
Electrical Characteristics at Ta = 25C
Parameter Tr1 [2SC5226] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure Tr2 [TS4162] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure ICBO IEBO hFE1 hFE2 fT Cob | S21e |2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=2V, IC=3mA VCE=2V, IC=50mA VCE=2V, IC=3mA VCB=10V, f=1MHz VCE=2V, IC=3mA, f=150MHz VCE=2V, IC=3mA, f=150MHz 13 80 70 1.0 1.7 1.1 16 1.8 3.0 1.8 GHz pF dB dB 1.0 10 200 A A ICBO IEBO hFE fT Cob | S21e |2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=20mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=5V, IC=7mA, f=1GHz 9 90 7 0.75 12 1.0 1.8 1.2 1.0 10 200 GHz pF dB dB A A Symbol Conditions Ratings min typ max Unit
Marking : 202
Electrical Connection
B1 E2 B2
TR1
TR2
C1
E1
C2
3 2
hFE -- IC
[Tr1] VCE=5V
2
fT -- IC
[Tr1] VCE=5V
Gain-Bandwidth Product, fT - GHz
10 7 5
DC Current Gain, hFE
100 7 5 3 2
3 2
10 7 5 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 IT00357
1.0 7 5 7 1.0 2 3 5 7 2 3 5 7 100 2 IT00358
Collector Current, IC - mA
Collector Current, IC - mA
10
3 2
Cob -- VCB
[Tr1] f=1MHz
3
Cre -- VCB
[Tr1] f=1MHz
Reverse Transfer Capacitance, Cre - pF
7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
2
Output Capacitance, Cob - pF
1.0 7 5 3 2
1.0 7 5 3 2
0.1 7 5
0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Collector-to-Base Voltage, VCB -- V
IT00359
Collector-to-Base Voltage, VCB -- V
IT00360
No.6220-2/9
FH202
12
NF -- IC
[Tr1]
Forward Transfer Gain, S21e - dB
VCE=5V f=1GHz
10
14
S21e -- IC
2
[Tr1] f=1GHz
12
Noise Figure, NF - dB
2
6
6
4
4
2
2 0
0 3 5 7 1.0 2 3 5
Collector Current, IC - mA
7 10
2
3
5 7 100 2 IT00361
3
5
7 1.0
2
2V
3 5 7 10
8
V CE
=5
8
V
10
2
3
5
Collector Current, IC - mA
7 100 2 IT00362
220 200
PC -- Ta
[Tr1]
Collector Dissipation, PC - mW
180 160 150 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
To t
al
di
ss
1u
ip
nit
ati
on
Ambient Temperature, Ta - C
IT00363
No.6220-3/9
FH202
S parameter [Tr1]
f=100MHz, 200MHz to 2000MHz(200MHz Step) j50 j25 j100 j150 j10 j200 j250 150 f=100MHz, 200MHz to 2000MHz(200MHz Step) 0.1GHz 90 120
VCE=5V VCE=5V IC=20mA IC=7mA
60
2.0GHz
0
10
2.0GHz 2.0GHz
25 50 100 150 250
VCE=2V IC=3mA
--j10
VCE=5V IC=20mA
180
V =2V 0.1GHz I CE C=3mA 0.1GHz 2.0GHz 2.0GHz 4 8 2.0GHz
30
12
16 20
0
VCE=5V I =7mA 0.1GHz C 0.1GHz
--j250 --j200 --j150 0.1GHz --j100
--150
--30
--j25 --j50
--120
IT00364
--60 --90
IT00365
f=100MHz, 200MHz to 2000MHz(200MHz Step) 90 120
f=100MHz, 200MHz to 2000MHz(200MHz Step) j50 j25 30 j100 j150 j10 j200 j250
2.0GHz
60 2.0GHz
150
VCE=5V IC=20mA
2.0GHz VCE=2V IC=3mA VCE=5V IC=7mA
180
0.1GHz 0.1GHz 0.1GHz 0.04 0.08 0.12 0.16 0.2
0
0
10
25
50
100
150
250
VCE=5V IC=7mA 2.0GHz
--j10 --150 --30
2.0GHz
VCE=5V IC=20mA
--j250 --j200 --j150 --j100
2.0GHz VCE=2V IC=3mA
--j25
--120
--60 --90
IT00366
--j50
IT00367
No.6220-4/9
FH202
S Parameters (Common emitter) [Tr1]
VCE=5V, IC=7mA, ZO=50
Freq (MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 | S11 | 0.720 0.612 0.497 0.456 0.440 0.436 0.434 0.433 0.433 0.434 0.439 S11 -46.0 -80.9 -121.3 -143.5 -157.6 -167.5 -176.1 -176.6 -170.9 -165.0 -159.6 | S21 | 17.973 13.927 8.656 6.080 4.725 3.864 3.258 2.847 2.329 2.252 2.057 S21 148.5 127.3 105.0 92.8 84.3 77.0 70.3 64.5 57.4 54.2 49.2 | S12 | 0.030 0.047 0.066 0.079 0.094 0.110 0.126 0.143 0.160 0.178 0.197 S12 68.5 57.1 51.3 52.9 55.4 56.8 57.9 58.4 58.9 58.6 58.1 | S22 | 0.880 0.697 0.479 0.382 0.339 0.323 0.312 0.304 0.296 0.293 0.294 S22 -23.6 -37.6 -47.6 -50.5 -51.8 -53.4 -55.8 -58.3 -62.0 -65.0 -68.1
VCE=5V, IC=20mA, ZO=50
Freq (MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 | S11 | 0.481 0.420 0.391 0.386 0.381 0.382 0.385 0.388 0.390 0.391 0.394 S11 -78.8 -119.2 -151.6 -166.4 -175.9 178.2 172.1 166.7 162.1 156.7 152.1 | S21 | 29.795 19.008 10.416 7.084 5.407 4.401 3.701 3.217 2.839 2.534 2.319 S21 132.9 112.2 95.4 86.6 80.1 74.1 68.5 63.6 58.8 54.3 50.1 | S12 | 0.022 0.033 0.052 0.071 0.092 0.114 0.134 0.156 0.176 0.197 0.219 S12 63.9 60.8 64.7 67.2 68.4 67.8 66.8 65.6 64.0 62.4 60.6 | S22 | 0.707 0.470 0.296 0.236 0.213 0.208 0.204 0.202 0.199 0197 0.197 S22 -38.2 -51.1 -55.3 -56.1 -56.6 -57.9 -60.7 -63.5 -67.9 -71.2 -74.2
VCE=2V, IC=3mA, ZO=50
Freq (MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 | S11 | 0.858 0.782 0.653 0.588 0.557 0.543 0.536 0.533 0.527 0.525 0.528 S11 -32.4 -60.7 -101.1 -126.5 -143.7 -156.3 -166.8 -175.5 177.0 170.3 163.8 | S21 | 9.413 8.187 5.855 4.337 3.444 2.871 2.446 2.145 1.904 1.714 1.564 S21 157.2 138.5 113.8 98.4 87.7 78.5 70.5 63.5 57.1 51.7 45.9 | S12 | 0.040 0.070 0.101 0.114 0.122 0.130 0.137 0.146 0.155 0.168 0.183 S12 72.6 59.2 44.5 39.1 38.0 38.6 40.3 42.5 45.0 47.3 49.2 | S22 | 0.945 0.833 0.637 0.515 0.454 0.426 0.407 0.393 0.382 0379 0.378 S22 -16.5 -29.3 -43.2 -50.0 -53.8 -57.1 -60.3 -63.8 -68.0 -72.0 -75.8
No.6220-5/9
FH202
3 2
hFE -- IC
[Tr2]
Gain-Bandwidth Product, fT - GHz
2
fT -- IC
[Tr2]
VCE=2V
DC Current Gain, hFE
10 7 5 3 2
1V
100 7 5
=2V V CE 1V
3 2
1.0 7 5 3
10 3 5 7 1.0 2 3 5 7 10 2 3 5 7
7
1.0
2
3
5
7
10
2
3
5
7
Collector Current, IC - mA
5 3
IT00368
Collector Current, IC - mA
5
IT00369
Cob -- VCB
[Tr2]
Reverse Transfer Capacitance, Cre - pF
Cre -- VCB
[Tr2] f=1MHz
f=1MHz
Output Capacitance, Cob - pF
3 2
2
1.0 7 5 3 2
1.0 7 5 3 2
0.1 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
0.1 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Collector-to-Base Voltage, VCB -- V
12
IT00370
Collector-to-Base Voltage, VCB -- V
32 28 24 20 16 12 8 4 0
NF -- IC
[Tr2] f=150MHz
Forward Transfer Gain, S21e - dB
S21e2 -- IC
IT00371
[Tr2] f=150MHz
10
Noise Figure, NF - dB
2
8
=2 E VC
V
6
1V
4
VC = E 2V
2
1V
7 2 3 5 7 2 3 5 7
0 1.0 10
Collector Current, IC - mA
220 200
100 IT00372
3
5
7 1.0
2
3
5
7 10
2
3
5
Collector Current, IC - mA
7 100 IT00373
PC -- Ta
[Tr2]
Collector Dissipation, PC - mW
180 160 150 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
To t
al
di
ss
1u
ip
nit
ati
on
Ambient Temperature, Ta - C
IT00374
No.6220-6/9
FH202
S parameter [Tr2]
S11e f=50MHz to 500MHz(50MHz Step) j50 j25 j100 j150 j10 j200 j250 150 S21e f=50MHz to 500MHz(50MHz Step) 90 120
60
VCE=2V IC=3mA
30
50MHz
180
500MHz
4 8 12 16 20
0
10
25
50
100 150 250 500
0
--j10
500MHz 50MHz
VCE=2V IC=3mA
--j25 --j50
--j250 --j200 --j150
--150
--30
--j100 --120
IT00375
--60 --90
IT00376
S12e f=50MHz to 500MHz(50MHz Step) 90 120 60
S22e f=50MHz to 500MHz(50MHz Step) j50 j25 30 j10 j100 j150 j200 j250
150
VCE=2V IC=3mA
50MHz
180
0.04 0.08 0.12 0.16 0.2
500MHz
0
10 25 50 100 150 250 500
0
500MHz
--j10 --150 --30
50MHz
--j250 --j200 --j150
VCE=2V IC=3mA
--j25
--j100 --j50
--120
--60 --90
IT00377
IT00378
S Parameters (Common emitter) [Tr2]
VCE=2V, IC=1mA, ZO=50
Freq (MHz) 50 100 150 200 250 300 350 400 450 500 | S11 | 0.965 0.948 0.922 0.903 0.885 0.873 0.866 0.854 0.846 0.847 S11 -25.6 -49.3 -69.5 -86.0 -99.4 -110.4 -119.4 -127.4 -133.9 -138.9 | S21 | 3.48 3.30 2.96 2.65 2.33 2.07 1.89 1.73 1.58 1.44 S21 163.7 149.2 136.6 126.3 117.3 110.1 103.8 97.8 92.9 88.5 | S12 | 0.040 0.075 0.101 0.119 0.131 0.139 0.145 0.147 0.148 0.148 S12 75.3 62.8 51.8 42.9 35.9 30.1 25.4 21.2 17.7 15.0 | S22 | 0.985 0.951 0.907 0.859 0.819 0.791 0.778 0.753 0.742 0.736 S22 -7.1 -13.3 -18.0 -21.7 -24.6 -26.9 -28.7 -30.8 -32.7 -34.4
No.6220-7/9
FH202
VCE=2V, IC=3mA, ZO=50
Freq (MHz) 50 100 150 200 250 300 350 400 450 500 | S11 | 0.909 0.873 0.836 0.815 0.794 0.784 0.779 0.769 0.767 0.766 S11 -35.9 -66.2 -89.8 -106.3 -119.1 -128.7 -136.3 -143.1 -148.1 -152.1 | S21 | 9.43 8.30 7.03 5.94 5.05 4.36 3.90 3.46 3.13 2.83 S21 158.4 141.0 127.6 117.9 110.4 104.3 99.4 94.8 91.3 87.8 | S12 | 0.038 0.067 0.084 0.095 0.100 0.104 0.107 0.108 0.108 0.108 S12 71.0 56.0 44.9 37.5 32.4 28.7 26.0 23.9 22.4 21.7 | S22 | 0.949 0.849 0.744 0.658 0.590 0.550 0.518 0.493 0.474 0.463 S22 -14.8 -26.1 -33.4 -38.0 -41.4 -43.2 -44.7 -45.8 -47.2 -48.5
VCE=2V, IC=10mA, ZO=50
Freq (MHz) 50 100 150 200 250 300 350 400 450 500 | S11 | 0.775 0.731 0.709 0.704 0.695 0.695 0.695 0.694 0.696 0.694 S11 -61.9 -101.2 -124.3 -136.7 -146.3 -152.6 -157.6 -162.0 -164.9 -167.7 | S21 | 23.54 17.31 13.06 10.22 8.43 7.09 6.21 5.45 4.84 4.39 S21 145.3 124.8 112.7 105.5 100.2 96.2 92.7 89.8 87.5 85.0 | S12 | 0.033 0.048 0.056 0.060 0.064 0.066 0.070 0.072 0.075 0.078 S12 61.4 46.5 39.6 37.1 36.5 36.8 37.2 38.5 39.9 41.5 | S22 | 0.836 0.624 0.481 0.387 0.335 0.296 0.270 0.245 0.231 0.222 S22 -34.4 -55.2 -67.0 -75.8 -80.4 -85.3 -87.4 -91.4 -95.3 -97.9
VCE=2V, IC=30mA, ZO=50
Freq (MHz) 50 100 150 200 250 300 350 400 450 500 | S11 | 0.647 0.657 0.663 0.665 0.664 0.667 0.669 0.672 0.670 0.671 S11 -98.6 -134.1 -149.5 -157.6 -163.2 -167.3 -170.2 -173.0 -174.9 -176.6 | S21 | 37.50 22.96 16.09 12.33 9.95 8.35 7.23 6.33 5.64 5.08 S21 129.9 111.5 103.0 97.8 94.3 91.3 89.0 86.9 85.1 83.3 | S12 | 0.024 0.032 0.037 0.041 0.046 0.051 0.055 0.060 0.066 0.071 S12 52.4 44.8 44.8 47.3 49.5 52.2 54.0 55.9 57.2 58.3 | S22 | 0.665 0.448 0.353 0.308 0.286 0.271 0.258 0.253 0.251 0.250 S22 -61.6 -90.7 -107.8 -119.8 -128.1 -133.9 -138.9 -143.4 -146.5 -148.4
No.6220-8/9
FH202
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of November, 1999. Specifications and information herein are subject to change without notice.
PS No.6220-9/9

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