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| FJZ733 FJZ733 Low Frequency Amplifier * Collector-Base Voltage : VCBO= -60V * Complement to FJZ945 3 2 1 SOT-623F 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -60 -50 -5 -150 100 150 -55 ~ 150 Units V V V mA mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC= -100A, IE=0 IC= -10mA. IB=0 IE = -10A. IC=0 VCB= --60V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -1mA IC= -100mA, IB= -10mA VCE= -6V, IC= -1mA VCE= -6V, IC= -10mA VCB= -10V, IE = 0, f=1MHz VCE= -6V, IC= -0.3mA f=1MHz, Rs=10k -0.50 50 40 -0.18 -0.62 180 2.8 6.0 Min. -60 -50 -5 -100 -100 700 -0.3 -0.80 V V MHz pF dB Typ. Max. Units V V V nA nA Thermal Characteristics TC=25C unless otherwise noted Symbol RJA Parameter Thermal Resistance, Junction to Ambient Max. 1250 Units C/W hFE Classification & Marking Classification hFE Marking R 40 ~ 80 A2 O 70 ~ 140 A3 Marking Y 120 ~ 240 A1 G 200 ~ 400 A4 L 350 ~ 700 A5 A1 (c)2003 Fairchild Semiconductor Corporation Rev. B1, July 2003 FJZ733 Typical Characteristics -50 -45 IC[mA], COLLECTOR CURRENT IB = -400A -40 -35 -30 -25 -20 -15 -10 -5 0 Ta=125 C Ta=25 C Ta=-25 C 0 0 0 VCE=-6V IB = -350A IB = -300A IB = -250A IB = -200A IB = -150A IB = -100A IB = -50A 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 hFE, DC CURRENT GAIN 100 10 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC Current Gain IC=10IB VBE(SAT)[V], SATURATION VOLTAGE -1 Ta=-25 C Ta=25 C Ta=125 C 0 0 0 VCE(sat)[V], SATURATION VOLTAGE -1 IC=10IB Ta=125 C -0.1 0 Ta=25 C 0 0 Ta=-25 C -0.1 -1E-3 -0.01 -0.1 -1 -0.01 -1E-3 -0.01 -0.1 -1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage -100 VCE=-6V 10 IE = 0 f = 1MHz IC[mA], COLLECTOR CURRENT -80 -60 125 C -40 0 25 C 0 -25 C 0 -20 Cob [pF], CAPACITANCE -0 -0.0 1 -0.2 -0.4 -0.6 -0.8 -1.0 -1 -10 -100 VBE[V], BASE-EMITTER VOLTAGE VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance (c)2003 Fairchild Semiconductor Corporation Rev. B1, July 2003 FJZ733 Typical Characteristics (Continued) fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 VCE = -6V 100 10 -1 -10 IC[mA], COLLECTOR CURRENT Figure 7. Current Gain Bandwidth Product (c)2003 Fairchild Semiconductor Corporation Rev. B1, July 2003 FJZ733 Package Dimensions SOT-623F Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation Rev. B1, July 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet SeriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2003 Fairchild Semiconductor Corporation Rev. I3 |
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