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| 100V, 20A Schottky barrier diode in TO220F package FME-220A sAbsolute maximum ratings Parameter VRM IF(AV) IFSM I2 t Tj Tstg Ratings 100 20 120 72 - 40 to +150 - 40 to +150 Unit V A A A2 s C C 10ms Half-cycle sinewave Single Shot Conditions sElectrical characteristics Parameter VF IR H.IR Rth( j-c) Ratings 0.85 1.0max 100max 4.0max Unit V mA mA C/W IF =10A VR =VRM (Ta = 25C) Conditions Tj =150C, VR=VRM Junction-to-case 25 IF(AV) -PF Characteristic 100 Tj =150C t T t /T =1/6 Forward current IF (A) VF - IF Characteristic (Typ.) 20 Average forward current IF(AV) (A) TC -IF(AV) Characteristic t /T =1/6 VR =0V t /T = 1/2 Forward power loss PF (W) 20 10 16 D.C. 15 t /T =1/ 3, Sinewave 1 12 t /T = 1/ 3, Sinewave 10 t /T =1/2 5 D.C. 0.1 Ta=150C 125C 100C 60C 25C 0 0.4 0.8 1.2 1.6 8 Tj =150C t T 0 50 100 150 0.01 4 0 0 5 10 15 20 Average forward current IF(AV) (A) 0.001 Forward voltage VF (V) 0 Case temperature TC (C) 18 16 Reverse power loss PR (W) VR -PR Characteristic Tj =150C t T VR - IR Characteristic (Typ.) 100 10 Reverse current IR (mA) 1 0.1 0.01 0.001 60C 125C 100C Average forward current IF(AV) (A) Ta=150C 20 TC -IF(AV) Characteristic Sinewave VR =100V 1- t /T=1/2 1-t /T=1/3 14 12 10 8 6 4 2 0 0 1- t /T= 5/6 1- t /T= 2/3 1- t /T= 1/2 16 12 1-t /T=1/6 8 Tj =150C t T 0 50 100 D.C. 25C 4 Sinewave 20 40 60 80 100 0.0001 0 20 40 60 80 100 Reverse voltage VR (V) 0 150 Reverse voltage VR (V) Case temperature TC (C) External dimensions (Unit: mm) Flammability: UL94V-0 or equivalent 3.3 4.4 4.0 10.0 4.2 2.8 C0.5 Reference data VF Distribution (IF =10A) 0.80 0.79 IR (A) VF (V) 0.78 0.77 0.76 2.4 IR Distribution (VR=100V, Ta=25C) 50 45 40 35 30 25 20 15 10 5 0 10 20 30 N (pcs) 40 50 40 39 38 37 36 35 34 33 32 31 30 IR Distribution (VR=100V, Ta=150C) 16.9 0.8 13.50.5 3.9 1.35 0.85 2.54 2.54 0.45 -0.1 +0.2 0.75 0 10 20 30 N (pcs) 40 50 IR (mA) 0 10 20 30 N (pcs) 40 50 |
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