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| FQB6N40CF 400V N-Channel MOSFET December 2005 FRFET FQB6N40CF 400V N-Channel MOSFET Features * 6A, 400V, RDS(on) = 1.1 @VGS = 10 V * Low gate charge ( typical 16nC) * Low Crss ( typical 15pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * Fast recovery body diode (typical 70ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D D G G S D2-PAK FQB Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) Parameter FQB6N40CF 400 6 3.8 24 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 270 6 11.3 4.5 113 0.9 -55 to +150 300 Thermal Characteristics Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient FQB6N40CF 1.1 40 62.5 Units C/W C/W C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQB6N40CF Rev. A FQB6N40CF 400V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQB6N40CF Device FQB6N40CFTM Package D -PAK TC = 25C unless otherwise noted Reel Size 330mm Tape Width 24mm Quantity 800 2 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 3 A VDS = 40 V, ID = 3 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 400 -----2.0 ------ Typ -0.54 -----0.9 4.7 480 80 15 13 65 21 38 16 2.3 8.2 ---70 0.12 Max Units --10 100 100 -100 4.0 1.1 -625 105 20 35 140 55 85 20 --6 24 1.4 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC A A V ns C On Characteristics Dynamic Characteristics Switching Characteristics VDD = 200 V, ID = 6A, RG = 25 ---(Note 4, 5) --------- VDS = 320 V, ID = 6A, VGS = 10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 6 A VGS = 0 V, IS = 6 A, dIF / dt = 100 A/s (Note 4) -- 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13.7mH, IAS = 6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 6A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature FQB6N40CF Rev. A 2 www.fairchildsemi.com FQB6N40CF 400V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : Figure 2. Transfer Characteristics 10 1 10 1 ID, Drain Current [A] ID, Drain Current [A] 150 C 25 C 10 0 o 10 0 o -55 C o 10 -1 Notes : 1. 250 Pulse Test s 2. TC = 25 -1 Notes : 1. VDS = 40V 2. 250 Pulse Test s 10 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 3.5 10 1 RDS(ON) [ ], Drain-Source On-Resistance 3.0 2.5 VGS = 10V 2.0 IDR, Reverse Drain Current [A] 10 0 1.5 VGS = 20V 1.0 Note : TJ = 25 150 25 Notes : 1. VGS = 0V s 2. 250 Pulse Test 0.5 0 5 10 15 20 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 1200 Figure 6. Gate Charge Characteristics 12 1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 80V 10 VGS, Gate-Source Voltage [V] VDS = 200V 8 Capacitances [pF] 800 Ciss 600 VDS = 320V Coss 6 400 Crss 200 Note ; 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 6A 0 -1 10 10 0 10 1 0 0 5 10 15 20 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQB6N40CF Rev. A 3 www.fairchildsemi.com FQB6N40CF 400V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 3 A 0.9 Notes : 1. VGS = 0 V A 2. ID = 250 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 6 10 2 Operation in This Area is Limited by R DS(on) 1 10 s 5 ID, Drain Current [A] ID, Drain Current [A] 10 100 s 1 ms 10 ms 100 ms 4 10 0 DC 3 2 10 -1 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 1 10 -2 10 0 10 1 10 2 10 3 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ ] Figure 11. Transient Thermal Response Curve 10 0 D = 0 .5 0 .2 0 .1 N o te s : 1 . Z J C (t) = 1 .7 1 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) ZJC(t), Thermal Response 10 -1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e PDM t1 t2 0 1 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQB6N40CF Rev. A 4 www.fairchildsemi.com FQB6N40CF 400V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQB6N40CF Rev. A 5 www.fairchildsemi.com FQB6N40CF 400V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB6N40CF Rev. A 6 www.fairchildsemi.com FQB6N40CF 400V N-Channel MOSFET Mechanical Dimensions D2-PAK (0.40) 9.90 0.20 4.50 0.20 1.30 -0.05 +0.10 1.20 0.20 9.20 0.20 15.30 0.30 1.40 0.20 2.00 0.10 0.10 0.15 2.40 0.20 2.54 0.30 9.20 0.20 www.fairchildsemi.com 4.90 0.20 (0.75) 1.27 0.10 2.54 TYP 0.80 0.10 2.54 TYP 10.00 0.20 (8.00) (4.40) 0 ~3 +0.10 0.50 -0.05 10.00 0.20 15.30 0.30 (1.75) (2XR0.45) 0.80 0.10 Dimensions in Millimeters FQB6N40CF Rev. A 7 4.90 0.20 (7.20) FQB6N40CF 400V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 Preliminary No Identification Needed Full Production Obsolete Not In Production 8 FQB6N40CF Rev. A www.fairchildsemi.com |
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