 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FQS4410 May 2000 QFET FQS4410 Single N-Channel, Logic Level, Power MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. TM Features * * * * * * 10A, 30V, RDS(on) = 0.0135 @VGS = 10 V Low gate charge ( typical 21 nC) Low Crss ( typical 145 pF) Fast switching Improved dv/dt capability 175C maximum junction temperature rating 8 7 6 5 4 3 2 1 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS dv/dt PD TJ, TSTG TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 70C) Drain Current - Pulsed (Note 1) FQS4410 30 10 8 50 20 7.0 2.5 0.02 -55 to +175 Units V A A A V V/ns W W/C C Gate-Source Voltage Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) Linear Derating Factor Operating and Storage Temperature Range (Note 3) Thermal Characteristics Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient Typ -Max 50 Units C/W (c)2000 Fairchild Semiconductor International Rev. A, May 2000 FQS4410 Electrical Characteristics Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min Typ Max Unit s Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 30 V, VGS = 0 V VDS = 24 V, TC = 125C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 30 ------0.03 ------1 10 100 -100 V V/C A A nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 5 A VDS = 10 V, ID = 5 A (Note 4) 1.0 ---- ---16 2.5 0.0135 0.02 -- V S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---980 590 145 1280 770 190 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 24 V, ID = 10 A, VGS = 5 V VDD = 15 V, ID = 5 A, RG = 50 (Note 4, 5) -----(Note 4, 5) 30 165 65 110 21 4.2 12 70 340 140 230 28 --- ns ns ns ns nC nC nC --- Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 2.3 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 24 A, dIF / dt = 100 A/s (Note 4) ------ ---45 45 2.3 50 1.1 --- A A V ns nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 3mH, IAS = 10A, VDD = 15V, RG = 25 , Starting TJ = 25C 3. ISD 10A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. A, May 2000 FQS4410 Typical Characteristics I D, Drain Current [A] 10 1 ID, Drain Current [A] VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top : 10 1 150 25 10 0 Note : 1. 250 Pulse Test s 2. TC = 25 -55 10 -1 Note 1. VDS = 10V 2. 250 Pulse Test s 10 -1 10 0 10 0 2.0 2.5 3.0 3.5 4.0 V DS , Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. Output Characteristics Figure 2. Transfer Characteristics 40 Drain-Source On-Resistance 30 I DR , Reverse Drain Current [A] VGS = 4.5V 10 1 R DS(ON) [m ], VGS = 10V 20 10 0 10 150 -1 25 Note : TJ = 25 Note : 1. VGS = 0V 2. 250 Pulse Test s 0 0 10 20 30 40 50 10 0.2 0.4 0.6 0.8 1.0 1.2 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 2500 10 VDS = 15V VDS = 24V V GS , Gate-Source Voltage [V] Coss 2000 8 Capacitance [pF] Ciss 1500 Note ; 1. VGS = 0 V 2. f = 1 MHz 6 1000 Crss 4 500 2 Note : ID = 10A 0 -1 10 0 10 0 10 1 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage (c)2000 Fairchild Semiconductor International Rev. A, May 2000 FQS4410 Typical Characteristics (Continued) 1.2 2.5 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.0 1.1 Drain-Source On-Resistance R DS(ON) , (Normalized) 1.5 1.0 1.0 0.9 Note : 1. V = 0 V GS A 2. ID = 250 0.5 Note : 1. VGS = 10 V 2. ID = 10 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature 12 Operation in This Area is Limited by R DS(on) 10 2 10 100 s ID , Drain Current [A] 1 ms 10 1 10 ms 100 ms ID , Drain Current [A] 8 6 10 0 DC 4 Notes : 10 -1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 2 10 -1 10 0 10 1 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature (t), T h e rm a l R e s p o n s e 10 2 D = 0 .5 10 1 0 .2 0 .1 0 .0 5 0 .0 2 Note s : 1 . Z J A( t ) = 5 0 /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T A = P D M * Z J A( t ) 10 0 0 .0 1 s in g le p u ls e Z JA 10 -1 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] Figure 11. Thermal Response (c)2000 Fairchild Semiconductor International Rev. A, May 2000 FQS4410 Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS Qg 5V Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 5V DUT Vin 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT VDD BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time (c)2000 Fairchild Semiconductor International Rev. A, May 2000 FQS4410 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop (c)2000 Fairchild Semiconductor International Rev. A, May 2000 FQS4410 Package Dimensions 8-SOP MIN 1.55 0.20 0.061 0.008 0.1~0.25 0.004~0.001 #1 #8 4.92 0.20 0.194 0.008 5.13 MAX 0.202 ( #4 #5 6.00 0.30 0.236 0.012 +0.10 0.15 -0.05 +0.004 0.006 -0.002 0.56 ) 0.022 1.80 MAX 0.071 MAX0.10 MAX0.004 3.95 0.20 0.156 0.008 5.72 0.225 0.50 0.20 0.020 0.008 (c)2000 Fairchild Semiconductor International 0~ 8 1.27 0.050 0.41 0.10 0.016 0.004 Rev. A, May 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. F1 |
Price & Availability of FQS4410
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |