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| MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FS20KMA-4A HIGH-SPEED SWITCHING USE FS20KMA-4A OUTLINE DRAWING 10 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 2.6 0.2 q 10V DRIVE q VDSS ............................................................................... 200V q rDS (ON) (MAX) ............................................................. 0.18 q ID ......................................................................................... 20A GATE DRAIN SOURCE TO-220FN APPLICATION CS Switch for CRT Display monitor, Switch mode power supply, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 200 20 20 60 20 40 -55 ~ +150 -55 ~ +150 2000 2.0 Unit V V A A A W C C V g Sep.1998 L = 200H AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FS20KMA-4A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IGS = 10A, VDS = 0V VGS = 20V, VDS = 0V VDS = 200V, VGS = 0V ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 10A, VGS = 10V ID = 10A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 200 20 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.14 1.40 18.0 1650 200 65 20 40 290 70 0.95 -- Max. -- 10 1 4.0 0.18 1.80 -- -- -- -- -- -- -- -- -- 3.13 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 100V, ID = 10A, VGS = 10V, RGEN = RGS = 50 IS = 10A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 tw = 10s 100s 1ms 10ms 40 101 7 5 3 2 30 20 100 7 5 3 2 TC = 25C Single Pulse 10 DC 0 0 50 100 150 200 10-1 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50 TC = 25C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V 10V 6V 4V DRAIN CURRENT ID (A) 40 DRAIN CURRENT ID (A) 30 VGS = 20V 10V 8V 6V 5V 16 12 PD = 40W 20 4V 8 3.5V 10 PD = 40W 4 TC = 25C Pulse Test 0 0 4 8 12 16 20 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FS20KMA-4A HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.20 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () TC = 25C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25C Pulse Test 16 0.16 12 0.12 VGS = 10V 20V 8 ID = 30A 20A 10A 0.08 4 0.04 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 50 5 4 3 FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25C 75C 125C DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) TC = 25C VDS = 10V Pulse Test 40 2 30 101 7 5 4 3 2 20 10 100 7 5 0 VDS = 10V Pulse Test 2 3 4 5 7 101 2 3 4 5 7 102 0 4 8 12 16 20 100 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 5 4 3 Ciss SWITCHING CHARACTERISTICS (TYPICAL) td(off) 103 7 5 3 2 Coss Crss SWITCHING TIME (ns) 2 CAPACITANCE Ciss, Coss, Crss (pF) 102 7 5 4 3 2 TCh = 25C VDD = 100V VGS = 10V RGEN = RGS = 50 2 3 4 5 7 101 tf tr td(on) 102 7 5 3 TCh = 25C 2 f = 1MHZ VGS = 0V 2 3 4 5 7 101 2 3 4 5 7 102 101 7 5 101 0 10 100 2 3 4 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FS20KMA-4A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50 SOURCE CURRENT IS (A) VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) 20 TCh = 25C ID = 20A 16 40 TC = 125C 75C 25C 12 VDS = 50V 100V 150V 30 8 20 4 10 0 0 40 80 120 160 200 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 10A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = 10V ID = 1mA 4.0 3.0 100 7 5 3 2 2.0 1.0 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 0.5 1.2 100 0.2 7 5 0.1 3 2 PDM tw 1.0 0.8 10-1 7 5 3 2 0.6 0.05 0.02 0.01 Single Pulse T D= tw T 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep.1998 CHANNEL TEMPERATURE Tch (C) |
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