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| NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 SEPT 93 FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt FXT455 B C E REFER TO ZTX455 FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO I CM IC Ptot Tj:Tstg VALUE 160 140 5 2 1 1 -55 to +200 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO MIN. 160 140 5 0.1 0.1 0.7 100 100 15 3-34 300 MHz pF TYP. MAX. UNIT V V V A A CONDITIONS. IC=100A, IE=0 IC=10mA, IB=0* IE=100A, IC=0 VCB=140V, IE=0 VEB=4V, IC=0 IC=150mA, IB=15mA* IC=150mA, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage VCE(sat) V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo 10 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% |
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