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| MITSUBISHI Nch POWER MOSFET FY7ACH-03A HIGH-SPEED SWITCHING USE FY7ACH-03A OUTLINE DRAWING Dimensions in mm 6.0 4.4 5.0 1.8 MAX. 0.4 1.27 SOURCE GATE DRAIN q 2.5V DRIVE q VDSS .................................................................................. 30V q rDS (ON) (MAX) ............................................................. 26m q ID ........................................................................................... 7A SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 10 7 49 7 1.7 6.8 1.8 -55 ~ +150 -55 ~ +150 0.07 Unit V V A A A A A W C C g Sep.1998 L = 10H MITSUBISHI Nch POWER MOSFET FY7ACH-03A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage (Tch = 25C) Test conditions ID = 1mA, VGS = 0V VGS = 10V, VDS = 0V VDS = 20V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 4V ID = 3A, VGS = 2.5V ID = 7A, VGS = 4V ID = 7A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 30 -- -- 0.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 0.9 20 28 0.14 18 1450 480 230 25 55 130 120 0.75 -- 100 Max. -- 0.1 0.1 1.3 26 38 0.18 -- -- -- -- -- -- -- -- 1.1 69.4 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 10V, ID = 3A, VGS = 4V, RGEN = RGS = 50 IS = 1.7A, VGS = 0V Channel to ambient IS = 1.7A, dis/dt = -50A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 2.0 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 tw = 10s 100s 1.6 101 7 5 3 2 1ms 1.2 0.8 100 7 5 3 2 10ms 100ms 0.4 10-1 TC = 25C 0 0 50 100 150 200 7 5 Single Pulse DC 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 TC = 25C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 5V 4V 3V 2.5V 2V TC = 25C Pulse Test DRAIN CURRENT ID (A) 16 VGS = 5V 4V 3V 2.5V 2V 1.5V DRAIN CURRENT ID (A) 8 1.5V 12 6 8 4 PD = 1.8W 4 PD = 1.8W 2 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.1 0.2 0.3 0.4 0.5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Nch POWER MOSFET FY7ACH-03A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) TC = 25C Pulse Test 0.8 32 0.6 24 VGS = 2.5V 4V 0.4 ID = 14A 16 0.2 7A 3A 8 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 1.0 2.0 3.0 4.0 5.0 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 TC = 25C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 TC = 25C 4 75C 3 125C 2 DRAIN CURRENT ID (A) 12 FORWARD TRANSFER ADMITTANCE yfs (S) 16 101 7 5 4 3 2 8 4 0 0 1.0 2.0 3.0 4.0 5.0 100 7 100 2 3 4 5 7 101 2 3 45 7 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 4 3 2 Ciss SWITCHING CHARACTERISTICS (TYPICAL) 103 TCh = 25C 7 VDD = 15V 5 VGS = 4V 4 RGEN = RGS = 50 3 2 td(off) tf 103 7 5 4 3 2 TCh = 25C f = 1MHZ VGS = 0V 2 3 4 5 7 100 2 3 4 5 7 101 Coss Crss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 102 7 5 4 3 2 tr td(on) 102 -1 10 101 7 100 2 3 4 5 7 101 2 3 45 7 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Nch POWER MOSFET FY7ACH-03A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 SOURCE CURRENT IS (A) VGS = 0V Pulse Test 5 TCh = 25C ID = 7A VDS = 10V 15V 20V 4 16 3 12 2 8 1 4 TCh = 125C 75C 25C 0 0 4 8 12 16 20 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 4V 7 ID = 7A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = 10V ID = 1mA 1.6 1.2 100 7 5 3 2 0.8 0.4 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch - a) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 D = 1.0 3 0.5 2 1.2 101 0.2 7 5 0.1 3 2 PDM tw 1.0 0.8 100 7 5 3 2 0.05 0.02 0.01 Single Pulse T D= tw T 0.6 0.4 -50 0 50 100 150 10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Sep.1998 CHANNEL TEMPERATURE Tch (C) |
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