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FYAF3045DN
FYAF3045DN
Features
* Low forward voltage drop * High frequency properties and switching speed * Guard ring for over-voltage protection
Applications
* Switched mode power supply * Freewheeling diodes
1 2 3
TO-3PF
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 105C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 45 45 30 300 -65 to +150 Units V V A A C
Thermal Characteristics
Symbol RJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 2.2 Units C/W
Electrical Characteristics (per diode)
Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 15A IF = 15A IF = 30A IF = 30A Maximum Instantaneous Reverse Current @ rated VR Value TC = 25 C TC = 125 C TC = 25 C TC = 125 C TC = 25 C TC = 125 C 0.55 0.49 0.70 0.65 mA 1 120 Units V
IRM *
* Pulse Test: Pulse Width=300s, Duty Cycle=2%
(c)2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
FYAF3045DN
Typical Characteristics
100
100
TJ=150 C TJ=125 C
o
o
Reverse Current, I R[mA]
Forward Current, I F[A]
10
10
1
TJ=75 C
o
1
TJ=125 C
0.1
o
0.1
TJ=75 C TJ=25 C
o
o
0.01
TJ=25 C
o
0.01 0.0
1E-3
0.5
1.0
1.5
0
10
20
30
40
Forward Voltage Drop, VF[V]
Reverse Voltage, VR[V]
Figure 1. Typical Forward Voltage Characteristics (per diode)
Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode)
2000
10
Juntion Capacitance, C J[pF]
TJ=25 C
1000 900 800 700 600 500 400 300
o
Transient Thermal Impedance [ C/W]
o
1
200 0 10 20 30 40
0.1 100
1m
10m
100m
1
10
Reverse Voltage, VR[V]
Pulse Duration [s]
Figure 3. Typical Junction Capacitance (per diode)
Figure 4. Thermal Impedance Characteristics (per diode)
35 30 25 20 15 10 5 0 0 20 40 60 80 100
o
350
Max. Forward Surge Current, I FSM[A]
120 140 160
Average Forward Current, IF(AV)[A]
DC
300 250 200 150 100 50 0 1 10 100
Case Temperature, T C [ C]
Number of Cycles @ 60Hz
Figure 5. Forward Current Derating Curve
Figure 6. Non-Repetive Surge Current (per diode)
(c)2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
FYAF3045DN
Package Dimensions
TO-3PF
5.50 0.20
4.50 0.20
15.50 0.20
o3.60 0.20
3.00 0.20 (1.50)
10.00 0.20
10
26.50 0.20
23.00 0.20
16.50 0.20
14.50 0.20
0.85 0.03
16.50 0.20
2.00 0.20
14.80 0.20
2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10
+0.20
2.00 0.20
2.50 0.20
2.00 0.20
3.30 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.90 -0.10
+0.20
3.30 0.20
2.00 0.20
5.50 0.20
1.50 0.20
(c)2002 Fairchild Semiconductor Corporation
22.00 0.20
Dimensions in Millimeters
Rev. A, September 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. I1

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