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Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1600 R 17 KF6 B2
Hochstzulassige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prufspannung insulation test voltage tp = 1 ms TC = 80 C TC = 25 C tP = 1 ms, TC = 80C VCES IC,nom. IC ICRM 1700 1600 3200 3200 V A A A
TC=25C, Transistor
Ptot
12,5
kW
VGES
+/- 20V
V
IF
1600
A
IFRM
3200
A
VR = 0V, t p = 10ms, T Vj = 125C
2 It
980
kA2s
RMS, f = 50 Hz, t = 1 min.
VISOL
4
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 1600A, V GE = 15V, Tvj = 25C IC = 1600A, V GE = 15V, Tvj = 125C IC = 130mA, VCE = VGE, Tvj = 25C VGE(th) 4,5 VCE sat
min.
typ.
2,6 3,1 5,5
max.
3,1 3,6 6,5 V V V
VGE = -15V ... +15V
QG
19
C
f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V
Cies
105
nF
f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V VCE = 1700V, V GE = 0V, Tvj = 25C VCE = 1700V, V GE = 0V, Tvj = 125C VCE = 0V, V GE = 20V, Tvj = 25C
Cres ICES
5,3 0,04 20 3 160 400
nF mA mA nA
IGES
prepared by: Oliver Schilling approved by: Chr. Lubke; 11.10.99
date of publication: 4.9.1999 revision: 2 (Serie)
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FZ1600R17KF6B2
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1600 R 17 KF6 B2
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 1600A, V CE = 900V VGE = 15V, RG = 0,9, Tvj = 25C VGE = 15V, RG = 0,9, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1600A, V CE = 900V VGE = 15V, RG = 0,9, Tvj = 25C VGE = 15V, RG = 0,9, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 1600A, V CE = 900V VGE = 15V, RG = 0,9, Tvj = 25C VGE = 15V, RG = 0,9, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 1600A, V CE = 900V VGE = 15V, RG = 0,9, Tvj = 25C VGE = 15V, RG = 0,9, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modulleitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip pro Zweig / per arm IC = 1600A, V CE = 900V, V GE = 15V RG = 0,9, Tvj = 125C, LS = 50nH IC = 1600A, V CE = 900V, V GE = 15V RG = 0,9, Tvj = 125C, LS = 50nH tP 10sec, V GE 15V TVj125C, VCC=1000V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 6400 12 A nH Eoff 670 mWs Eon 430 mWs tf 0,15 0,16 s s td,off 1,2 1,2 s s tr 0,19 0,19 s s td,on 0,3 0,3 s s
min.
typ.
max.
RCC+EE
0,08
m
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 1600A, V GE = 0V, Tvj = 25C IF = 1600A, V GE = 0V, Tvj = 125C IF = 1600A, - diF/dt = 9600A/sec VR = 900V, VGE = -10V, T vj = 25C VR = 900V, VGE = -10V, T vj = 125C Sperrverzogerungsladung recovered charge IF = 1600A, - diF/dt = 9600A/sec VR = 900V, VGE = -10V, T vj = 25C VR = 900V, VGE = -10V, T vj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 1600A, - diF/dt = 9600A/sec VR = 900V, VGE = -10V, T vj = 25C VR = 900V, VGE = -10V, T vj = 125C Erec 125 240 mWs mWs Qr 220 460 As As IRM 920 1350 A A VF
min.
typ.
2,1 1,95
max.
2,5 2,3 V V
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FZ1600R17KF6B2
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1600 R 17 KF6 B2
Thermische Eigenschaften / Thermal properties
min.
Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K RthCK 0,008 RthJC
typ.
max.
0,01 0,017 K/W K/W K/W
Tvj
150
C
Top
-40
125
C
Tstg
-40
125
C
Mechanische Eigenschaften / Mechanical properties
Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight terminals M4 terminals M8 G 1050 min. M1 AlN
17
mm
10
mm
275 5 Nm
M2
2 8 - 10
Nm Nm g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
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FZ1600R17KF6B2
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1600 R 17 KF6 B2
Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (V CE)
V GE = 15V
3500
3000
2500
IC [A]
2000
1500
Tj = 25C Tj = 125C
1000
500
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
3500
VGE = 20V VGE = 15V VGE = 12V VGE = 10V
I C = f (V CE)
T vj = 125C
3000
2500
VGE = 9V VGE = 8V
IC [A]
2000
1500
1000
500
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
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FZ1600R17KF6B2
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1600 R 17 KF6 B2
Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (V GE)
VCE = 20V
3500
Tj = 25C Tj = 125C
3000
2500
IC [A]
2000
1500
1000
500
0 5 6 7 8 9 10 11 12 13
VGE [V]
Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical)
3500
Tj = 125C
I F = f (V F)
3000
Tj = 25C
2500
IF [A]
2000
1500
1000
500
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0
VF [V]
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FZ1600R17KF6B2
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1600 R 17 KF6 B2
Schaltverluste (typisch) Eon = f (I C) , Eoff = f (I C) , Erec = f (I C) Switching losses (typical) Rgon = Rgoff =0,9, VCE = 900V, T j = 125C, V GE = 15V
1800 1600 1400 1200 E [mJ] 1000 800 600 400 200 0 0 500 1000 1500 2000 2500 3000 3500
Eoff Eon Erec
IC [A]
Schaltverluste (typisch) Switching losses (typical)
1600 1400 1200 1000 E [mJ] 800 600 400 200 0 0 1 2
Eoff Eon Erec
E on = f (RG) , Eoff = f (RG) , Erec = f (RG)
IC = 1600A , V CE = 900V , T j = 125C, V GE = 15V
3
4
5
6
7
RG []
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FZ1600R17KF6B2
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1600 R 17 KF6 B2
Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t)
0,1
0,01
ZthJC [K / W]
0,001
Zth:Diode Zth:IGBT
0,0001 0,001
0,01
0,1
1
10
100
t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode
1 0,94 0,027 7,85 0,0287 2 4,72 0,052 3,53 0,0705 3 1,425 0,09 1,12 0,153 4 2,92 0,838 4,52 0,988
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA)
3500 3000 2500 2000 1500 1000 500 0 0 200 400 600 800 1000 IC,Modul IC,Chip
Rg = 0,9 Ohm, T vj= 125C
IC [A]
1200
1400
1600
1800
VCE [V]
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FZ1600R17KF6B2
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1600 R 17 KF6 B2
Auere Abmessungen / external dimensions
8(8)
FZ1600R17KF6B2

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