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| Ordering number : ENN7781 GK001T GK001T Features * * * * * * N-Channel GTBT Switching Regulator Applications Adoption of process GTBT (Grounded-Trench-MOS assisted Bipolar-mode Field Effect Transistor). High breakdown voltage and high reliablity. High speed switching. Wide ASO. Low saturation voltage, low On resistance : RCE(sat)=280m (at 1A). High hFE (typ : 1000). Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC ICP IB PC Tj Tstg PW300s, Duty cycle10% Conditions Ratings 600 600 7 2 4 1 0.8 Tc=25C 22 150 --55 to +150 Unit V V V A A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES IEBO hFE1 hFE2 hFE3 Cob VCE(sat) VBE(sat) VCB=500V, IE=0 VCE=500V, RBE=0 VEB=6V, IC=0 VCE=5V, IC=50mA VCE=5V, IC=400mA VCE=5V, IC=1.2A VCB=10V, f=1MHz IC=1A, IB=0.2A IC=1A, IB=0.2A 500 35 12 7.2 280 1.1 560 1.5 pF mV V Conditions Ratings min typ max 10 10 10 1500 Unit A A A Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 33004 TS IM TB-00000049 No.7781-1/4 GK001T Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CES V(BR)CEO ton tstg tf IC=100A, IE=0 IC=100A, RBE=0 IC=1mA, RBE= IC=1A, IB1=0.1A, IB2=--0.45A, RL=200 IC=1A, IB1=0.1A, IB2=--0.45A, RL=200 IC=1A, IB1=0.1A, IB2=--0.45A, RL=200 Conditions Ratings min 600 600 200 200 700 70 typ max Unit V V V ns ns ns Package Dimensions unit : mm 2045B 6.5 5.0 4 Package Dimensions unit : mm 2044B 1.5 2.3 0.5 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.8 1.6 0.6 0.5 1 0.6 7.5 0.8 2 3 2.5 1.2 0.85 0.5 1.2 0.85 0.7 5.5 7.0 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 2.3 2.3 Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 RB + 100F VBE= --5V + 470F VCC=200V RL 250mA 2.0 1.8 IC -- VCE 200mA 2.0 IC -- VBE VCE=5V 180mA 160mA 140mA Collector Current, IC -- A Collector Current, IC -- A 1.6 1.2 1.0 0.8 300mA 1.4 120mA 100mA 80mA 60mA 1.5 20mA 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10mA 5mA 0.5 IB=0 4.5 5.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT07035 Collector-to-Emitter Voltage, VCE -- V IT07034 Base-to-Emitter Voltage, VBE -- V --40 C 40mA Ta= 25 120C C 1.0 No.7781-2/4 GK001T 10000 7 5 3 2 hFE -- IC VCE=5V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 1.0 7 5 3 2 VCE(sat) -- IC IC / IB=5 Ta= --4 0 120C DC Current Gain, hFE 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.001 23 C 25C 0.1 7 5 2 3 2 Ta= 5C 12 0C --4 C 0 5 7 0.01 23 5 7 0.1 23 Collector Current, IC -- A 10 7 5 7 1.0 23 IT07036 0.01 0.001 23 5 7 0.01 23 5 7 0.1 23 5 7 1.0 23 5 VBE(sat) -- IC Collector Current, IC -- A 100 7 5 IT07037 Cob -- VCB IC / IB=5 Output Capacitance, Cob -- pF f=1MHz Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 3 2 1.0 7 5 3 2 Ta= --40C 25C 120C 10 7 5 3 2 0.1 0.001 2 3 5 7 0.01 23 5 7 0.1 23 5 7 1.0 23 5 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT07039 Collector Current, IC -- A 7 5 3 2 IT07038 7 5 Forward Bias ASO Collector-to-Base Voltage, VCB -- V Reverse Bias ASO ICP=4A IC=2A =10 PT Collector Current, IC -- A 1.0 7 5 3 2 0.1 7 5 3 2 DC Collector Current, IC -- A op 50 1m 0s 10 s ms 3 2 0s era tio n 10 0m s 1.0 7 5 3 2 0.01 1.0 Tc=25C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 0.1 IT07040 25 22 Tc=25C IB2= --0.4A L=500H, Single pulse 2 3 5 7 100 2 3 5 10 Collector-to-Emitter Voltage, VCE -- V 0.9 0.8 PC -- Ta Collector-to-Emitter Voltage, VCE -- V 7 1000 IT07041 PC -- Tc Collector Dissipation, PC -- W Collector Dissipation, PC -- W 0 20 40 60 80 100 120 140 160 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT07042 Case Temperature, Tc -- C IT07043 No.7781-3/4 GK001T Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS No.7781-4/4 |
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