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| GP1L50J0000F GP1L50J0000F Gap : 3mm, Slit : 0.5mm Darlington Phototransistor Output, Case package Transmissive Photointerrupter Description GP1L50J0000F is a standard, darlington phototransistor output, transmissive photointerrupter with opposing emitter and detector in a case, providing non-contact sensing. For this family of devices, the emitter and detector are inserted in a case, resulting in a throughhole design. The case is unique because it uses additional screw fixing holes, on both sides 3.2mm diameter, and the shape prevents miss-orientation. Agency approvals/Compliance 1. Compliant with RoHS directive Applications 1. General purpose detection of object presence or motion. 2. Example : Printer, FAX, Optical storage unit Features 1. Transmissive with darlington phototransistor output 2. Highlights : * Verical Slit for alternate motion detection * Includes additional screw fixing holes 3. Key Parameters : * Gap Width : 3mm * Slit Width (detector side): 0.5mm * Package : 25x10x6mm 4. Lead free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D3-A03001EN Date Oct. 3. 2005 (c) SHARP Corporation GP1L50J0000F Internal Connection Diagram Top view 3 2 1 2 3 4 4 1 Anode Cathode Collector Emitter Outline Dimensions Top view 250.3 190.2 12.20.3 3+0.2 -0.1 5 6 (Unit : mm) 2-3.20.2 A-A section 3.5 0.5 (2.5) (Detctor center) Date code AB SHARP 2-C2 B-B section 1.5 0.5 10 Model No. 7.5 4-0.4+0.3 -0.1 (9.2) 4 1 10MIN. A B GP1L50 2 4-0.45+0.3 -0.1 (2.54) 3 * Unspecified tolerance shall be as follows ; Dimensions(d) d6 6 Tolerance 0.1 0.2 0.25 Product mass : approx. 0.7g Dip soldering material : Sn-3Ag-0.5Cu 7 Sheet No.: D3-A03001EN 2 GP1L50J0000F Date code (2 digit) 1st digit Year of production A.D. Mark 2000 0 2001 1 2002 2 2003 3 2004 4 2005 5 2006 6 2007 7 2008 8 2009 9 2010 0 : : 2nd digit Month of production Month Mark 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 X 11 Y 12 Z repeats in a 10 year cycle Country of origin Japan, Indonesia or Philippines (Indicated on the packing case) Sheet No.: D3-A03001EN 3 GP1L50J0000F Absolute Maximum Ratings Parameter Symbol Rating 1 Forward current IF 50 1, 2 Peak forward current IFM 1 Input Reverse voltage VR 6 Power dissipation P 75 Collector-emitter voltage VCEO 35 Emitter-collector voltage VECO 6 Output Collector current IC 40 1 Collector power dissipation PC 75 Operating temperature Topr -25 to +85 Storage temperature Tstg -40 to +100 3 Soldering temperature Tsol 260 (Ta=25C) Unit mA A V mW V V mA mW C C C 1 Refer to Fig. 1, 2, 3 2 Pulse width 100s, Duty ratio=0.01 3 For 5s or less Electro-optical Characteristics Parameter Forward voltage Input Peak forward voltage Reverse current Output Collector dark current Collector current Transfer Collector-emitter saturation voltage characRise time teristics Response time Fall time Symbol VF VFM IR ICEO IC VCE(sat) tr tf Condition IF=20mA IFM=0.5A VR=3V VCE=10V VCE=2V, IF=1mA IF=2mA, IC=0.5mA VCE=2V, IC=2mA, RL=100 MIN. - - - - 0.5 - - - TYP. 1.25 3 - - - - 80 70 (Ta=25C) MAX. Unit 1.4 V 4 V 10 A 1 A 20 mA 1 V 400 s 350 Sheet No.: D3-A03001EN 4 GP1L50J0000F Fig.1 Forward Current vs. Ambient Temperature 60 50 Forward current IF (mA) 40 30 Fig.2 Collector Power Dissipation vs. Ambient Temperature 120 Collector power dissipation PC (mW) 100 80 75 60 40 20 15 0 -25 0 25 50 75 85 100 20 10 0 -25 0 25 50 75 85 Ambient temperature Ta (C) 100 Ambient temperature Ta (C) Fig.3 Peak Forward Current vs. Duty Ratio Pulse width100s Ta=25C Peak forward current IFM (mA) 1 000 Fig.4 Forward Current vs. Forward Voltage Ta=75C 50C Forward current IF (mA) 100 25C 0C -25C 100 10 10 10-2 10-1 Duty ratio 1 1 0 0.5 1 1.5 2 2.5 3 3.5 Foward voltage VF (V) Fig.5 Collector Current vs. Forward Current 50 45 40 Collector current IC (mA) 35 30 25 20 15 10 5 0 0 1 2 3 Forward current IF (mA) 4 5 VCE=2V Ta=25C Fig.6 Collector Current vs. Collector-emitter Voltage 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 Ta=25C Collector current IC (mA) IF =2.5mA PC (MAX.) 2mA 1.5mA 1mA 0.5mA 1 2 3 4 5 6 7 8 9 10 Collector-emitter VCE (V) Sheet No.: D3-A03001EN 5 GP1L50J0000F Fig.7 Collector Current vs. Ambient Temperature 8 7 Collector current IC (mA) 6 5 4 3 2 1 0 -25 0 25 50 75 Ambient temperature Ta (C) 100 I F=1mA V CE=2V Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature 1 Collector-emitter saturation voltage VCE (sat) (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -25 0 25 50 75 100 IF=2mA IC=0.5mA Ambient temperature Ta (C) Fig.9 Response Time vs. Load Resistance 1 000 Fig.10 Test Circuit for Response Time VCE= 2V IC = 2mA Ta =25C Response time (s) 100 VCC RD tf tr Input RL Output Input 10% 90% td ts tr tf Output td 10 ts 1 1 10 100 Load resistance RL (k) 1 000 Fig.11 Frequency Response 5 VCE=2V IC=10mA Ta=25C Fig.12 Collector Dark Current vs. Ambient Temperature 10-4 VCE=20V 10-5 Collector dark current ICEO (A) 10-6 10-7 10-8 10-9 10-10 10-11 -25 0 Voltage gain AV (dB) -5 RL= 1k -10 100 10 -15 -20 10 3 10 10 Frequency f (Hz) 4 5 10 6 0 25 50 75 Ambient temperature Ta (C) 100 Sheet No.: D3-A03001EN 6 GP1L50J0000F Fig.13 Detecting Position Characteristics (1) IF=1mA, VCE=2V Ta=25C L Fig.14 Detecting Position Characteristics (2) IF=1mA, VCE=2V Ta=25C 100 Relative collector current (%) L Shield - 0 + Sensor 50 100 Relative collector current (%) Sensor Shield - 50 0 + 0 -1.5 -1 -0.5 0 0.5 1 1.5 Shield moving distance L (mm) 2 2.5 0 -3 -2 -1 0 1 2 3 Shield moving distance L (mm) 4 5 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D3-A03001EN 7 GP1L50J0000F Design Considerations Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Position of opaque board Opaque board shall be installed at place 4mm or more from the top of elements. (Example) 4mm or more 3) Screw tightening torque The tightening toque for screwing should be 0.6Nm or less. This product is not designed against irradiation and incorporates non-coherent IRED. Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. Parts This product is assembled using the below parts. * Photodetector (qty. : 1) Category Phototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 800 Sensitivity wavelength (nm) 400 to 1 200 Response time (s) 80 * Photo emitter (qty. : 1) Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) 950 I/O Frequency (MHz) 0.3 * Material Case Black NORYL resin Lead frame plating Solder dip. (Sn-3Ag-0.5Cu) Sheet No.: D3-A03001EN 8 GP1L50J0000F Manufacturing Guidelines Soldering Method Flow Soldering: Soldering should be completed below 260C and within 5 s. Please take care not to let any external force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by reflow. Hand soldering Hand soldering should be completed within 3 s when the point of solder iron is below 350C. Please solder within one time. Please don't touch the terminals directly by soldering iron. Soldered product shall treat at normal temperature. Other notice Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. Flux Some flux, which is used in soldering, may crack the package due to synergistic effect of alcohol in flux and the rise in temperature by heat in soldering. Therefore, in using flux, please make sure that it does not have any influence on appearance and reliability of the photointerrupter. Sheet No.: D3-A03001EN 9 GP1L50J0000F Cleaning instructions Solvent cleaning : Solvent temperature should be 45C or below. Immersion time should be 3 minutes or less. Ultrasonic cleaning : The affect to device by ultrasonic cleaning is different by cleaning bath size, ultrasonic power output, cleaning time, PCB size or device mounting condition etc. Please test it in actual using condition and confirm that doesn't occur any defect before starting the ultrasonic cleaning. Recommended solvent materials : Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). *Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). Sheet No.: D3-A03001EN 10 GP1L50J0000F Package specification Case package Package materials Anti-static plastic bag : Polyethtylene Moltopren : Urethane Partition : Corrugated fiberboard Packing case : Corrugated fiberboard Package method 100 pcs of products shall be packaged in a plastic bag, Ends shall be fixed by stoppers. The bottom ot the packing case is covered with moltopren, and the partition is set in the packing case. Each partition should have 1 plastic bag. The 10 plastic bags containing a product are put in the packing case. Moltopren should be located after all product are settled (1 packing contains 1 000 pcs). Packing composition Moltopren Partition Anti-static plastic bag Packing case Sheet No.: D3-A03001EN 11 GP1L50J0000F Important Notices * The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. * Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. * Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). * If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. * This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. * Contact and consult with a SHARP representative if there are any questions about the contents of this publication. [H155] Sheet No.: D3-A03001EN 12 |
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