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| GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm * * * * The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 s (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 1200 20 10 20 140 150 -55~150 Unit V V A W C C JEDEC JEITA TOSHIBA 2-16C1C Weight: 4.6 g (typ.) 1 2002-01-23 GT10Q101 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c) Test Condition VGE = 20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 10 A, VGE = 15 V VCE = 50 V, VGE = 0, f = 1 MHz Inductive Load VCC = 600 V, IC = 10 A VGG = 15 V, RG = 75 (Note1) Min 4.0 Typ. 2.1 600 0.07 0.30 0.16 0.50 Max 500 1.0 7.0 2.7 Unit nA mA V V pF 0.32 s 0.89 C/W Note1: Switching time measurement circuit and input/output waveforms VGE GT10Q301 -VGE IC RG L VCC VCE 0 IC 90% VCE 10% td (off) tf toff ton 10% 10% td (on) tr 90% 10% 0 90% 10% Note2: Switching loss measurement waveforms VGE 0 90% 10% IC 0 VCE 10% Eoff Eon 2 2002-01-23 GT10Q101 IC - VCE 20 13 16 15 20 12 20 Common emitter VCE - VGE (V) 12 Tc = -40C 16 (A) Collector-emitter voltage VCE IC 12 Collector current 8 VGE = 10 V 4 Common emitter Tc = 25C 0 0 1 2 3 4 5 8 10 4 IC = 4 A 20 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 20 Common emitter 20 Common emitter VCE - VGE (V) Tc = 125C 16 (V) Tc = 25C 16 Collector-emitter voltage VCE Collector-emitter voltage VCE 12 12 8 IC = 4 A 4 10 20 8 IC = 4 A 4 20 10 0 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 20 Common emitter 4 VCE = 5 V 16 Common emitter VCE (sat) - Tc 20 Collector-emitter saturation voltage VCE (sat) (V) VGE = 15 V 3 10 IC 12 Collector current (A) 2 IC = 4 A 8 25 4 Tc = 125C -40 1 0 0 4 8 12 16 20 0 -60 -20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2002-01-23 GT10Q101 Switching time ton, tr - RG 1 1 0.5 Switching time ton, tr - IC 0.5 (s) (s) 0.3 ton 0.3 ton ton, tr ton, tr 0.05 0.03 tr Common emitter VCC = 600 V VGG = 15 V IC = 10 A : Tc = 25C : Tc = 125C 5 10 30 50 100 300 500 Switching time Switching time 0.1 0.1 0.05 0.03 tr Common emitter VCC = 600 V VGG = 15 V RG = 75 : Tc = 25C : Tc = 125C 2 4 6 8 10 12 0.01 3 0.01 0 Gate resistance RG () Collector current IC (A) Switching time toff, tf - RG 3 Common emitter VCC = 600 V VGG = 15 V IC = 10 A : Tc = 25C : Tc = 125C 3 Switching time toff, tf - IC Common emitter VCC = 600 V VGG = 15 V RG = 75 : Tc = 25C : Tc = 125C toff (s) (s) toff, tf 1 1 toff, tf Switching time Switching time 0.5 toff 0.3 0.5 0.3 tf 0.1 tf 0.1 0.05 3 5 10 30 50 100 300 500 0.05 0 2 4 6 8 10 12 Gate resistance RG () Collector current IC (A) Switching loss 10 Common emitter VCC = 600 V VGG = 15 V IC = 10 A : Tc = 25C : Tc = 125C Note2 Eon, Eoff - RG 10 5 Switching loss Common emitter VCC = 600 V VGG = 15 V RG = 75 : Tc = 25C : Tc = 125C Note2 Eon, Eoff - IC (mJ) 3 Eon, Eoff Eon, Eoff (mJ) Eon 5 3 1 0.5 0.3 1 Eoff 0.5 0.3 Eon Switching loss Switching loss 0.1 0.05 0.03 Eoff 0.1 3 5 10 30 50 100 300 500 0.01 0 2 4 6 8 10 12 Gate resistance RG () Collector current IC (A) 4 2002-01-23 GT10Q101 C - VCE 3000 1000 Common emitter VCE, VGE - QG 20 (V) (pF) Cies 16 Collector-emitter voltage VCE 300 Capacitance 100 Coes 30 Common emitter 10 VGE = 0 f = 1 MHz Tc = 25C 3 0.1 0.3 1 3 10 30 100 1000 Cres 400 VCE = 200 V 8 200 4 0 0 20 40 60 80 0 100 Collector-emitter voltage VCE (V) Gate charge QG (nC) Safe operating area 100 50 50 30 IC max (pulsed)* IC max (continuous) 100 s* 50 s* Reverse bias SOA (A) (A) 30 10 5 3 IC IC 10 5 3 Collector current DC operation 1 ms* 10 ms* *: Single nonrepetitive 1 pulse Tc = 25C 0.5 Curves must be 0.3 dilated linearly with increase in temperature. 0.1 1 3 10 Collector current 1 0.5 0.3 Tj < 125C = VGE = 15 V RG = 75 3 10 30 100 300 1000 3000 30 100 300 1000 3000 0.1 1 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 10 2 Tc = 25C 1 Rth (t) - tw Transient thermal resistance Rth (t) (C/W) 10 10 0 10 -1 -2 -3 10 10 10 -4 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Pulse width tw (s) 5 2002-01-23 Gate-emitter voltage 600 600 400 12 VGE C (V) 1000 RL = 60 800 Tc = 25C GT10Q101 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-01-23 |
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