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| GWM 160-0055P3 Three phase full bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 LG6 S6 S5 G5 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.3 m MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25C TC = 90C TC = 25C (diode) TC = 90C (diode) Conditions TVJ = 25C to 150C Maximum Ratings 55 20 160 120 135 90 V V A A A A Applications AC drives * in automobiles - electric power steering - starter generator * in industrial vehicles - propulsion drives - fork lift drives * in battery supplied equipment Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. TVJ = 25C TVJ = 125C 2 0.1 0.2 86 18 25 25 50 70 40 0.9 100 1.7 1.4 2.3 3.8 2.9 m m 4 1 V A mA A nC nC nC ns ns ns ns V ns 0.85 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF t rr RthJC RthJH on chip level at VGS = 10 V VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V; TVJ = 25C TVJ = 125C VGS = 20 V; VDS = 0 V VGS= 10 V; VDS = 44 V; ID = 25 A VGS= 10 V; VDS = 30 V; ID = 25 A; RG = 10 (diode) IF = 80 A; VGS= 0 V (diode) IF = 20 A; -di/dt = 100 A/s; VDS = 30 V with heat transfer paste IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-3 447 GWM 160-0055P3 Component Symbol IRMS TVJ Tstg VISOL FC Symbol IISOL 1 mA; 50/60 Hz; t = 1 min Mounting force with clip Conditions Conditions per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections Equivalent Circuits for Simulation Maximum Ratings 300 -40...+175 -55...+125 1000 50 - 250 A C C V~ N junction - case (typ.) Cth1 = 0.039 J/K; Rth1 = 0.28 K/W Cth2 = 0.069 J/K; Rth2 = 0.57 K/W Thermal Response Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 0.6 m pF g Rpin to chip CP Weight coupling capacity between shorted pins and mounting tab in the case typ. 160 25 Dimensions in mm (1 mm = 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 2-3 447 GWM 160-0055P3 1.2 V 0.9 VDS 0.6 VGS = 8 V 10 V 12 V 1.5 RDSon RDSon(25C) 1.0 2.0 0.3 TVJ = 25C 0.5 0.0 0 100 200 ID 300 A 0.0 -50 0 50 100 TVJ 150 C Fig. 1: typ. output characteristics [VDS = ID (RDSon + 2x Rpin to chip)] 300 A 250 ID 200 6 VGS 10 V 8 Fig. 2: typ. dependence of RDSon on temperature ID = 25 A VDS = 14 V 150 4 100 TVJ = 125C TVJ = 25C 0 0 1 2 3 4 5 67 VGS V 8 0 0 20 40 60 QG 80 100 nC 2 VDS = 44 V 50 Fig. 3: typ.transfer characteristics 400 A VGS = 0 V 350 300 -ID 250 200 150 TVJ = 125C 100 50 TVJ = 25C 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V VSD Fig. 4: typ. gate charge characteristics 1 K/W 0.1 ZthJC 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 s 10 t IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 3-3 447 Fig. 5: typ. conduction characteristics of body diode Fig. 6: typ. transient thermal impedance |
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