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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6210-A Issued Date : 1998.02.01 Revised Date : 2000.09.15 Page No. : 1/4 H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Description This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current. Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ............................................................................... 625 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ....................................................................................... -50 V VCEO Collector to Emitter Voltage .................................................................................... -50 V VEBO Emitter to Base Voltage ............................................................................................ -3 V IC Collector Current ......................................................................................................... -50mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. -50 -50 -3 250 250 250 40 Typ. Max. -50 -50 -0.3 -0.85 800 4.0 Unit V V V nA nA V V Test Conditions IC=-100uA IC=-1mA IE=-10uA VCB=-35V VEB=-3V IC=-10mA, IB=-1mA IC=-10mA, IB=-5V VCE=-5V, IC=-0.1mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA IC=-0.5mA, VCE=-5V, f=100MHz VCB=-5V, f=1MHz MHz pF *Pulse Test : Pulse Width 380us, Duty Cycle2% HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 Spec. No. : HE6210-A Issued Date : 1998.02.01 Revised Date : 2000.09.15 Page No. : 2/4 Saturation Voltage & Collector Current Sat aton Volage ( V) ur i t m hFE hFE @ VCE=5V 100 VCE(sat) @ IC=10IB 100 0.1 1 10 100 10 1 10 100 C ol orC ur ent( A) l ect r m C ol orC ur ent( A) l ect r m On Voltage & Collector Current 1000 1000 Cutoff Frequency & Collector Current C ut fFr of equency ( Hz) M VBE(on) @ VCE=5V O n Volage ( V) t m fT @ VCE=5V 100 100 0.1 1 10 100 10 0.1 1 10 100 C ol orC ur ent( A) l ect r m C ol orC ur ent( A) l ect r m Capacitance & Reverse-Biased Voltage 10 Safe Operation Area 10 PT=1ms C ol orC ur ent( l ect r A) Capacitance (pF) 1 PT=100ms PT=1s Cob 0.1 1 1 10 100 0.01 1 10 100 Rever Bi se- ased Volage ( t V) For d B i war ased Volage ( t V) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6210-A Issued Date : 1998.02.01 Revised Date : 2000.09.15 Page No. : 3/4 PD-Ta 700 600 Power Dissipation-PD(mW) 500 400 300 200 100 0 0 20 40 60 80 100 o 120 140 160 Ambient Temperature-Ta( C) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 12 3 Spec. No. : HE6210-A Issued Date : 1998.02.01 Revised Date : 2000.09.15 Page No. : 4/4 2 Marking : HSMC Logo Part Number Date Code Rank Product Series 3 Laser Mark HSMC Logo Product Series C D Part Number H I E F G Ink Mark Style : Pin 1.Emitter 2.Base 3.Collector 1 3-Lead TO-92 Plastic Package HSMC Package Code : A *:Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 * Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification |
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