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HAT2299WP
Silicon N Channel Power MOS FET Power Switching
REJ03G1528-0100 Rev.1.00 Mar 20, 2007
Features
* Low on-resistance * Low drive current * High density mounting
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5678
5678 DDDD
4 321
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 150 30 14 28 14 28 14 14.7 25 5 150 -55 to +150 Unit V V A A A A A mJ W C/W C C
Rev.1.00 Mar 20, 2007 page 1 of 6
HAT2299WP
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 150 -- -- 3.0 6 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 10 0.097 710 160 13 26 31 53 7 15 4.3 5.6 0.85 95 Max -- 1 0.1 4.0 -- 0.11 -- -- -- -- -- -- -- -- -- -- 1.4 -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 150 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 7 A, VDS = 10 V Note4 ID = 7 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 7 A VGS = 10 V RL = 10.7 Rg = 10 VDD = 120 V VGS = 10 V ID = 14 A IF = 14 A, VGS = 0 Note4 IF = 14 A, VGS = 0 diF/dt = 100 A/s
Rev.1.00 Mar 20, 2007 page 2 of 6
HAT2299WP
Main Characteristics
Power vs. Temperature Derating
40 100 30
1m
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
30
10 3 1 0.3 0.1
DC (Tc Op = 2 era 5 tion C)
s
10
10 0 s s
20
PW = 10 ms (1shot)
10
0.03 Operation in this 0.01 area is limited by R
DS(on)
0.003 0 50 100 150 200 0.001 1
Ta = 25C
3
10
30
100
300
1000
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20 16 10 V 8V 6.5 V 20 7V Pulse Test
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
12 5.9 V 8
Drain Current ID (A)
16
12 Tc = 75C 8 25C 4 -25C
4
VGS = 5.4 V
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) ()
Drain to Source Saturation Voltage VDS(on) (V)
8
Pulse Test
1 0.5
VGS = 10 V
6
0.2 0.1 0.05
4
ID = 28 A
2
14 A 7A 20
0.02 0.01 1 3 10 30 Pulse Test 100 300 1000
0
4
8
12
16
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.1.00 Mar 20, 2007 page 3 of 6
HAT2299WP
Static Drain to Source on State Resistance vs. Temperature
0.5
Static Drain to Source on State Resistance RDS(on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
100 30 Tc = -25C 10 3 1 0.3 0.1 0.1 25C 75C
VGS = 10 V
Pulse Test
0.4 ID = 28 A 0.3 14 A
0.2 7A
0.1 0 -25
VDS = 10 V Pulse Test 0.3 1 3 10 30 100
0
25
50
75
100 125 150
Case Temperature Tc (C)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
10000 3000 VGS = 0 f = 1 MHz Ciss 240
Dynamic Input Characteristics
ID = 14 A 180 VDS 120 8 VDD = 30 V 60 V 120 V
VGS 12
1000 300 100 30 10 3 1 0 50
Coss
Crss
60
VDD = 120 V 60 V 30 V 4 8 12 16
4
100
150
0
0 20
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Switching Characteristics
1000 tf 100 td(on) 10 tr 1 0.1 tf tr 20
Reverse Drain Current vs. Source to Drain Voltage
Reverse Drain Current IDR (A)
Switching Time t (ns)
VGS = 10 V, VDD = 75 V PW = 5 s, duty 1 % RG = 10 td(off)
16
12
8 4
10 V 5V VGS = 0, -5 V Pulse Test
0.3
1
3
10
30
100
0
0.4
0.8
1.2
1.6
2.0
Drain Current
ID (A)
Source to Drain Voltage VSD (V)
Rev.1.00 Mar 20, 2007 page 4 of 6
Gate to Source Voltage VGS (V)
16
Capacitance C (pF)
HAT2299WP
Gate to Source Cutoff Voltage vs. Case Temperature
5
Gate to Source Cutoff Voltage VGS(off) (V)
VDS = 10 V 4 ID = 10 mA 1 mA 3 0.1 mA
2
1 0 -25
0
25
50
75
100 125 150
Case Temperature Tc (C) Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 5C/ W, Tc = 25C
PDM
0.03
0.02 1 0.0
1s h
D=
PW T
PW T
p ot
uls
e
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s) Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Vin 10 V VDD = 75V Vout 10% 10% Vout Monitor Vin 10%
Waveform
90%
90% td(on) tr
90% td(off) tf
Rev.1.00 Mar 20, 2007 page 5 of 6
HAT2299WP
Package Dimensions
Package Name WPAK JEITA Package Code - RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.075g
Unit: mm
0.5 0.15
4.21Typ 1.27Typ
5.1 0.2
0.8Max
3.9 0.2
6.1
5.9
0.04Min
0.7Typ
0.635Max
1.27Typ
0.2Typ
0.5 0.15
3.8 0.2
+0.1 -0.3
+0.1 -0.2
0.4 0.06
0.05Max 0Min Stand-off
4.9 0.1
(Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists.
Ordering Information
Part Name HAT2299WP-EL-E Quantity 2500 pcs Taping Shipping Container
Rev.1.00 Mar 20, 2007 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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(c) 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0

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