 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CYStech Electronics Corp. PNP and NPN Dual Digital Transistors Spec. No. : C154S6R Issued Date : 2005.01.13 Revised Date : Page No. : 1/6 HBCA143TS6R Features *Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). *The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the advantage of almost completely eliminating parasitic effects. *Only the on/off conditions need to be set for operation, making device design easy. *One DTA143T chip and one DTC143T chip in a SOT-363 package. *Mounting by SOT-323 automatic mounting machines is possible. *Mounting cost and area can be cut in half. *Transistor elements are independent, eliminating interference Equivalent Circuit HBCA143TS6R Outline SOT-363R RB2 TR1 RB1 TR2 RB1=4.7k , RB2=4.7 k HBCA143TS6R CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Note : 150mW per element must not be exceeded. Spec. No. : C154S6R Issued Date : 2005.01.13 Revised Date : Page No. : 2/6 Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits Tr1(NPN) Tr2(PNP) 50 -50 50 -50 5 -5 100 -100 200 (Note) 150 -55~+150 Unit V V V mA mW C C Characteristics (Ta=25) *Tr1(NPN) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency Symbol VCBO VCEO VEBO ICBO IEBO VCE(sat) hFE R fT Min 50 50 5 100 3.29 - Typ Max Unit 4.7 250 0.5 0.5 0.3 600 6.11 V V V A A V k MHz Test Conditions IC=50A IC=1mA IE=50A VCB=50V VEB=4V IC=5mA, IB=0.25mA VCE=5V, IC=1mA VCE=10V, IE=5mA, f=100MHz* * Transition frequency of the device *Tr2(PNP) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R fT -50 -50 -5 100 3.29 0.1 4.7 250 V V V -0.5 A -0.5 A -0.3 V 600 6.11 k MHz Test Conditions IC=-50A IC=-1mA IE=-50A VCB=-50V VEB=-4V IC=-5mA, IB=-0.25mA VCE=-5V, IC=-1mA VCE=-10V, IC=-5mA,f=100MHz * * Transition frequency of the device HBCA143TS6R CYStek Product Specification CYStech Electronics Corp. Characteristic Curves *Tr1(NPN) Current Gain vs Collector Current 1000 Saturation Voltage---(mV) 1000 Spec. No. : C154S6R Issued Date : 2005.01.13 Revised Date : Page No. : 3/6 Saturation Voltage vs Collector Current Current Gain---HFE 100 100 HFE@VCE=5V VCESAT@IC=20IB 10 10 0.1 1 10 100 Collector Current --IC(mA) 1 10 Collector Current --- IC(mA) 100 *Tr2(PNP) Current Gain vs Collector Current 1000 VCE=5V Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=20IB Saturation Voltage---(mV) 100 0.1 1 10 Collector Current---IC(mA) 100 Current Gain---HFE 100 10 0.1 1 10 100 Collector Current---IC(mA) HBCA143TS6R CYStek Product Specification CYStech Electronics Corp. Power Derating Curves 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 Ambient Temperature---TA() 200 Dual Single Spec. No. : C154S6R Issued Date : 2005.01.13 Revised Date : Page No. : 4/6 HBCA143TS6R CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C154S6R Issued Date : 2005.01.13 Revised Date : Page No. : 5/6 Carrier Tape Dimension HBCA143TS6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C154S6R Issued Date : 2005.01.13 Revised Date : Page No. : 6/6 SOT-363 Dimension Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R *:Typical DIM A B C D G H Inches Min. Max. 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026BSC 0.004 Millimeters Min. Max. 1.8 2.2 1.15 1.35 0.8 1.1 0.1 0.3 0.65BSC 0.1 DIM J K N S Y Inches Min. Max. 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 Millimeters Min. Max. 0.1 0.25 0.1 0.30 0.20 REF 2.00 2.20 0.30 0.40 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBCA143TS6R CYStek Product Specification |
Price & Availability of HBCA143TS6R
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |