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HCTS390MS
September 1995
Radiation Hardened Dual Decade Ripple Counter
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16 TOP VIEW
CP0N 1 1 MR 1 2 Q0 1 3 CP1N 1 4 Q1 1 5 16 VCC 15 CP0N 2 14 MR 2 13 Q0 2 12 CP1N 2 11 Q1 2 10 Q2 2 9 Q3 2
Features
* 3 Micron Radiation Hardened CMOS SOS * Total Dose 200K RAD (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) * Dose Rate Survivability: >1 x 1012 RAD (Si)/s
* Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse * Latch-Up Free Under Any Conditions * Military Temperature Range: -55oC to +125oC * Significant Power Reduction Compared to LSTTL ICs * DC Operating Voltage Range: 4.5V to 5.5V * LSTTL Input Compatibility - VIL = 0.8V Max - VIH = 2.0V Min * Input Current Levels Ii 5A at VOL, VOH
Q2 1 6 Q3 1 7 GND 8
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16 TOP VIEW
CP0N 1 MR 1 Q0 1 CP1N 1 Q1 1 Q2 1 Q3 1 GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC CP0N 2 MR 2 Q0 2 CP1N 2 Q1 2 Q2 2 Q3 2
Description
The Intersil HCTS390MS is a Radiation Hardened dual decade ripple counter. The HCTS390MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family . The HCTS390MS is supplied in a 16 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER HCTS390DMSR HCTS390KMSR HCTS390D/Sample HCTS390K/Sample HCTS390HMSR TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sample Die PACKAGE 16 Lead SBDIP 16 Lead Ceramic Flatpack 16 Lead SBDIP 16 Lead Ceramic Flatpack Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
Spec Number File Number
662
518634 2476.2
DB NA
HCTS390MS Functional Diagram
4(12) nCP1 1(15) nCP0 2(14) nMR
R
Q
R
Q
R
Q
R
Q
3(13) nQ0
5(11) nQ1
6(10) nQ2
7(9) nQ3
TRUTH TABLE INPUTS CP MR L L H H = High Level L = Low Logic Level X = Immaterial = Low-to-High = High-to-Low H ACTION No Change Count All Qs Low
Spec Number 663
518634
Specifications HCTS390MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/oC
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Rise and Fall Time at 4.5V VCC (tr, tf) . . . . . . . . . .500ns Max Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . . . 2.0V to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 Output Current (Sink) IOL VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V (Standard Driver) VCC = 4.5V, VIH = 4.5V, VOUT = VCC - 0.4V, VIL = 0V (Standard Driver) VCC = 4.5V, VIH = 2.25V, IOL = 50A, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOL = 50A, VIL = 0.8V Output Voltage High VOH VCC = 4.5V, VIH = 2.25V, IOH = -50A, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOH = -50A, VIL = 0.8V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND 1 2, 3 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN 4.8 4.0 -4.8 -4.0 MAX 40 750 0.1 UNITS A A mA mA mA mA V
PARAMETER Quiescent Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND
Output Current (Source)
IOH
Output Voltage Low
VOL
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
1, 2, 3
+25oC, +125oC, -55oC
VCC -0.1 VCC -0.1 -
-
V
1, 2, 3
+25oC, +125oC, -55oC
-
V
1 2, 3
+25oC +125oC, -55oC +25oC, +125oC, -55oC
0.5 5.0 -
A A -
Noise Immunity Functional Test NOTES:
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.80V (Note 2)
7, 8A, 8B
1. All voltages referenced to device GND. 2. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
Spec Number 664
518634
Specifications HCTS390MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 CP1Nn to Q1n TPHL TPLH TPHL TPLH TPHL TPLH TPHL VCC = 4.5V 9 10, 11 CP1Nn to Q2n VCC = 4.5V 9 10, 11 CP1Nn to Q3n VCC = 4.5V 9 10, 11 MR to QNn VCC = 4.5V 9 10, 11 NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. LIMITS TEMPERATURE +25oC +125oC, -55oC +25 C +125oC, -55oC +25 C +125oC, -55oC +25 C +125oC, -55oC +25 C +125oC, -55oC
o o o o
PARAMETER CP0N to Q0n
SYMBOL TPHL TPLH
(NOTES 1, 2) CONDITIONS VCC = 4.5V
MIN 2 2 2 2 2 2 2 2 2 2
MAX 22 27 29 35 34 41 29 35 23 29
UNITS ns ns ns ns ns ns ns ns ns ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation Input Capacitance SYMBOL CPD CONDITIONS VCC = 5.0V, f = 1MHz NOTES 1, 2, 3 1, 2, 3 CIN VCC = 5.0V, f = 1MHz 1, 2, 3 1, 2, 3 Output Transition Time Max Operating Frequency Pulse Width CP0Nn, CP1Nn Pulse Width Reset TTHL TTLH FMAX VCC = 4.5V 1, 2, 3 1, 2, 3 VCC = 4.5V 1, 2, 3 1, 2, 3 TW VCC = 4.5V 1, 2, 3 1, 2, 3 TW VCC = 4.5V 1, 2, 3 1, 2, 3 Removal Time Reset NOTES: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. 2. Applies to DIC packaged devices. 3. Applies to Flatpack packaged devices. TREM VCC = 4.5V 1, 2, 3 1, 2, 3 TEMPERATURE +25oC +125oC, -55oC +25oC +125oC +25oC +125oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 15 22 13 20 15 22 MAX 50 56 10 10 15 22 27 18 UNITS pF pF pF pF ns ns MHz MHz ns ns ns ns ns ns
Spec Number 665
518634
Specifications HCTS390MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS PARAMETER Quiescent Current Output Current (Sink) SYMBOL ICC IOL (NOTES 1, 2) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.80V, IOL = 50A VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.80V, IOL = -50A VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 2.25V, VIL = 0.80V, (Note 3) VCC = 4.5V TEMPERATURE +25oC +25oC MIN 4.0 MAX 0.75 UNITS mA mA
Output Current (Source) Output Voltage Low
IOH
+25oC
-4.0
-
mA
VOL
+25oC
-
0.1
V
Output Voltage High
VOH
+25oC
VCC -0.1 -
-
V
Input Leakage Current Noise Immunity Functional Test CP0Nn to Q0n
IIN FN
+25oC +25oC
5 -
A -
TPHL TPLH TPHL TPLH TPHL TPLH TPHL TPLH TPHL
+25oC
2
27
ns
CP1Nn to Q1n
VCC = 4.5V
+25oC
2
35
ns
CP1Nn to Q2n
VCC = 4.5V
+25oC
2
41
ns
CP1Nn to Q3n
VCC = 4.5V
+25oC
2
35
ns
MR to Qn NOTES:
VCC = 4.5V
+25oC
2
29
ns
1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. 3. For functional tests VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP 5 5
PARAMETER ICC IOL/IOH
DELTA LIMIT 12A -15% of 0 Hour
Spec Number 666
518634
Specifications HCTS390MS
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 7, 9 Subgroups 1, 2, 3, 9, 10, 11 ICC, IOL/H READ AND RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
NOTE: 1. Alternate Group A in accordance with Method 5005 of MIL-STD-883 may be exercised.
TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group E Subgroup 2 METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 7, 9 POST RAD Table 4 (Note 1)
NOTE: 1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz
STATIC BURN-IN I TEST CONNECTIONS (Note 1) 3, 5 - 7, 9 - 11, 13 1, 2, 4, 8,12, 14, 15 16 -
STATIC BURN-IN II TEST CONNECTIONS (Note 1) 3, 5 - 7, 9 - 11, 13 8 1, 2, 4, 12, 14 - 16 -
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2) NOTES: 1. Each pin except VCC and GND will have a resistor of 10k 5% for static burn-in 2. Each pin except VCC and GND will have a resistor of 680 5% for dynamic burn-in 8 3, 5 - 7, 9 - 11, 13 2, 14, 16 1, 4, 12, 15 -
TABLE 9. IRRADIATION TEST CONNECTIONS OPEN 3, 5 - 7, 9 - 11, 13 GROUND 8 VCC = 5V 0.5V 1, 2, 4, 12, 14 - 16
NOTE: Each pin except VCC and GND will have a resistor of 47K 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 667
518634
HCTS390MS Intersil Space Level Product Flow - `MS'
Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 1and 2) 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 3) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5)
NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: * Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). * Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. * GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. * X-Ray report and film. Includes penetrometer measurements. * Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). * Lot Serial Number Sheet (Good units serial number and lot number). * Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. * The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number 668
518634
HCTS390MS AC Timing Diagrams
INPUT LEVEL TR INPUT LEVEL CP VS TW VS TPLH TPHL Q0 VS VS Q0 TW TPHL VS MR VS VS VS TF CP VS TREM
FIGURE 1. INPUT PULSE PRE-REQUISITE, PROPAGATIONDELAY, AND OUTPUT-TRANSITION TIMES
FIGURE 2. MASTER RESET PRE-REQUISITE AND PROPAGATION DELAYS
AC VOLTAGE LEVELS PARAMETER VCC
TTLH 80% VOL 20% 80% 20% TTHL
HCTS 4.50 3.00 1.30 0 0
UNITS V V V V V
VIH VS VIL
VOH
OUTPUT
FIGURE 3. OUTPUT TRANSITION TIME
VSS
AC Load Circuit
DUT TEST POINT CL RL
CL = 50pF RL = 500
Spec Number 669
518634
HCTS390MS Die Characteristics
DIE DIMENSIONS: 86 x 86 mils 2190m x 2190m METALLIZATION: Type: SiAl Metal Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 13kA 2.6kA WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4 mils x 4 mils
Metallization Mask Layout
HCTS390MS
(15) CP0N 2 (1) CP0N 1
(16) VCC
(2) MR1
(14) MR 2
Q0 1 (3)
(13) Q0 2
CP1N1 (4)
(12) CP1N 2
Q1 (5)
(11) Q1 2
Q2 (6)
(10) Q2 2
Q3 1 (7)
GND (8)
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask series for the HCTS390 is TA14489A.
Q3 2 (9)
Spec Number 670
518634

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