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HGTP12N60C3, HGT1S12N60C3S
Data Sheet December 2001
24A, 600V, UFS Series N-Channel IGBTs
The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49123.
Features
* 24A, 600V at TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss
Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Ordering Information
PART NUMBER HGTP12N60C3 HGT1S12N60C3S PACKAGE TO-220AB TO-263AB BRAND P12N60C3 S12N60C3 JEDEC TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S12N60C3S9A.
GATE
Symbol
C
COLLECTOR (FLANGE)
EMITTER
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2001 Fairchild Semiconductor Corporation
HGTP12N60C3, HGT1S12N60C3S Rev. B
HGTP12N60C3, HGT1S12N60C3S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTP12N60C3, HGT1S12N60C3S Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 24 12 96 20 30 24A at 600V 104 0.83 100 -40 to 150 260 4 13 W W/oC mJ
oC oC
UNITS V A A A V V
600
s s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES VCE = BVCES IC = IC110, VGE = 15V IC = 250A, VCE = VGE VGE = 20V TJ = 150oC RG = 25 VGE = 15V L = 100H IC = IC110, VCE = 0.5 BVCES VCE(PK) = 480V VCE(PK) = 600V TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC MIN 600 24 3.0 80 24 TYP 30 1.65 1.85 5.0 MAX 250 1.0 2.0 2.2 6.0 100 UNITS V V A mA V V V nA A A
Collector to Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA
Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Thermal Resistance NOTE:
VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON EOFF RJC
IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V
-
7.6 48 62 14 16 270 210 380 900 -
55 71 400 275 1.2
V nC nC ns ns ns ns J J
oC/W
TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25, L = 100H
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (I CE = 0A). The HGTP12N60C3 and HGT1S12N60C3S were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energ y Loss. Turn-On losses include diode losses.
(c)2001 Fairchild Semiconductor Corporation
HGTP12N60C3, HGT1S12N60C3S Rev. B
HGTP12N60C3, HGT1S12N60C3S Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s ICE, COLLECTOR TO EMITTER CURRENT (A) 80 70 60 50 40 30 20 10 0 4 6 8 10 12 14 VGE , GATE TO EMITTER VOLTAGE (V) TC = 25oC TC = -40oC TC = 150oC
PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = 25oC 80 70 60 50 40 30 20 10 0 0 7.0V 2 4 6 8 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 7.5V 10
9.0V 10.0V VGE = 15.0V 12.0V
8.5V 8.0V
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) TC = 25oC TC = -40oC TC = 150oC PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V
80 70 60 TC = -40oC 50 40 30 20 10 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) TC = 150oC PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V TC = 25oC
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
ICE , DC COLLECTOR CURRENT (A)
VGE = 15V
VCE = 360V, RG = 25, TJ = 125oC 120 15 ISC 80 60 40 tSC 5 10 11 12 13 14 VGE , GATE TO EMITTER VOLTAGE (V) 20 15 100
20
15
10
10
5
0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC)
FIGURE 5. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
(c)2001 Fairchild Semiconductor Corporation
HGTP12N60C3, HGT1S12N60C3S Rev. B
ISC, PEAK SHORT CIRCUIT CURRENT (A)
25
20
140
HGTP12N60C3, HGT1S12N60C3S Typical Performance Curves
100 td(ON)I , TURN-ON DELAY TIME (ns)
(Continued)
400 td(OFF)I , TURN-OFF DELAY TIME (ns)
TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V
TJ = 150oC, RG = 25, L = 100mH, VCE(PK) = 480V VGE = 15V VGE = 10V
300
50
30
VGE = 10V
200
20 VGE = 15V
10 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A)
100 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
200 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V trI , TURN-ON RISE TIME (ns) 100
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
300 TJ = 150oC, RG = 25, L = 100mH, VCE(PK) = 480V
tfI , FALL TIME (ns)
VGE = 10V
200 VGE = 10V or 15V
VGE = 15V
10
100 90 80 5 10 15 20 25 30 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)
5
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
2.0
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT
3.0 EOFF, TURN-OFF ENERGY LOSS (mJ)
EON , TURN-ON ENERGY LOSS (mJ)
TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V
TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 2.5 2.0 1.5 VGE = 10V or 15V 1.0 0.5 0
1.5
VGE = 10V 1.0
VGE = 15V 0.5
0 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A)
5
10
15
20
25
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
(c)2001 Fairchild Semiconductor Corporation
HGTP12N60C3, HGT1S12N60C3S Rev. B
HGTP12N60C3, HGT1S12N60C3S Typical Performance Curves
200 fMAX , OPERATING FREQUENCY (kHz) 100 VGE = 10V VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 1.2oC/W 1 5 10 20 30 ICE , COLLECTOR TO EMITTER CURRENT (A)
(Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A) 100 TJ = 150oC, VGE = 15V, RG = 25, L = 100H 80
TJ = 150oC, TC = 75oC RG = 25, L = 100H
60 LIMITED BY CIRCUIT
10
40
20
0 0 100 200 300 400 500 600 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
VCE , COLLECTOR TO EMITTER VOLTAGE (V) 2500 FREQUENCY = 1MHz 2000 C, CAPACITANCE (pF) CIES
FIGURE 14. SWITCHING SAFE OPERATING AREA
600
IG(REF) = 1.276mA, RL = 50, TC = 25oC
15 VGE, GATE TO EMITTER VOLTAGE (V)
480
VCE = 600V
12
1500
360
9
1000
240 VCE = 400V 120 VCE = 200V
6
500 CRES 0 0 5 10 15 20 25 VCE , COLLECTOR TO EMITTER VOLTAGE (V) COES
3
0 0 10 20 30 40 50 60 QG , GATE CHARGE (nC)
0
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
ZJC , NORMALIZED THERMAL RESPONSE
100 0.5
0.2 0.1 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-1 100 PD t2 101 t1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
(c)2001 Fairchild Semiconductor Corporation
HGTP12N60C3, HGT1S12N60C3S Rev. B
HGTP12N60C3, HGT1S12N60C3S Test Circuit and Waveform
L = 100H RHRP1560 VGE
90% 10% EOFF EON
RG = 25 +
VCE 90% VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I
-
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I+ tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0).
(c)2001 Fairchild Semiconductor Corporation
HGTP12N60C3, HGT1S12N60C3S Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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