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HN1K06FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K06FU
High Speed Switching Applications Analog Switch Applications
Unit: mm
* * * *
High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.5 V Switching speed is fast. Suitable for high-density mounting because of a compact package
Maximum Ratings (Ta = 25C) (Q1, Q2 common)
Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 20 10 100 200 150 -55 to 150 Unit V V mA mW C C
JEDEC JEITA TOSHIBA Weight: 6.8 mg
2-2J1C
Note: TOTAL rating
Electrical Characteristics (Ta = 25C) (Q1, Q2 common)
Characteristic Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Symbol IGSS V (BR) DSS IDSS Vth iYfsi RDS (ON) Ciss Crss Coss ton Switching time toff Test Condition VGS = 10 V, VDS = 0 V ID = 100 mA, VGS = 0 V VDS = 20 V, VGS = 0 V VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS=0 V, f = 1 MHz VDS = 3 V, VGS=0 V, f = 1 MHz VDS = 3 V, VGS=0 V, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V
Min 3/4 20 3/4 0.5 35 3/4 3/4 3/4 3/4 3/4 3/4
Typ. 3/4 3/4 3/4 3/4 62 3.5 14 5.3 16 0.28 0.34
Max 1 3/4 1 1.5 3/4 6.0 3/4 3/4 3/4 3/4
Unit mA V mA V mS W pF pF pF
ms 3/4
1
2002-01-16
HN1K06FU
Equivalent Circuit (top view)
6 5 4
Marking
6 5 4
Q1 Q2
KJ
1 (Q1, Q2 common)
2
3
1
2
3
Switching Time Test Circuit
(a) Test circuit
ID 2.5 V 0 10 ms VIN IN 50 W RL OUT VDD = 3 V D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25C
(b) VIN
VGS
2.5 V 10%
90%
0 VDD
(c) VOUT
VDS
VDS (ON) 90% tr ton toff
10%
VDD
tf
2
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HN1K06FU
(Q1, Q2 common)
ID - VDS
100 2.5 80 1.9 60 2.0 Common source Ta = 25C 0.8 1.0 2.5 1.2
ID - VDS (low voltage region)
Common source Ta = 25C 1.15
(mA)
Drain current ID
Drain current ID
(mA)
1.8 1.7 VGS = 1.6 V
0.6 1.1 0.4 VGS = 1.05 V 0.2
40
20
1.4 1.2
1.0 0.95 0 0.1 0.2 0.3 0.4 0.5
0 0
2
4
6
8
10
0
Drain-source voltage VDS
(V)
Drain-source voltage VDS
(V)
IDR - VDS
100 Common source 100 Ta = 100C
ID - VGS
Common source VDS = 3 V
(mA)
VGS = 0 10
(mA) Drain current ID
Drain reverse current IDR
Ta = 25C
10
1
D G S IDR
-25C 1
25C 0.1
0.1
0.01 0
-0.2
-0.4
-0.6 -0.8
-1.0
-1.2
-1.4
-1.6
-1.8
0.01 0
1
2
3
4
5
6
Drain-source voltage VDS
(V)
Gate-source voltage VGS (V)
iYfsi - ID
300 Common source VDS = 3 V 100
C - VDS
Common source VGS = 0 Coss f = 1 MHz Ta = 25C
Forward transfer admittance iYfsi (mS)
Capacitance C (pF)
100 Ta = 25C
30 Ciss Crss 10
30
10
3
3 1 1 0.5 0.1
1
3
5
10
30
50
100
300
0.3 0.5
1
3
5
10
30
Drain current ID
(mA)
Drain-source voltage VDS
(V)
3
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HN1K06FU
(Q1, Q2 common)
VDS (ON) - ID
3 1 Common source VGS = 2.5 V Ta = 25C 1000
t - ID
500
Drain-source on voltage VDS (ON) (V)
(ns)
toff tr tf
ton
300
0.1
Switching time t
100
50 2.5 V 30 0 10 ms VIN IN 50 9
0.01
ID
OUT RL
VDD 10
VDD = 5 V D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 W) Common source Ta = 25C 30 50 100
0.001 0.5
1
10
100
300
10 1
3
5
Drain current ID
(mA)
Drain current ID
(mA)
PD* - Ta
350 300
Drain power dissipation PD* (mW)
250 200 150 100 50 0 0
20
40
60
80
100
120
140
160
Ambient temperature Ta (C)
*: TOTAL rating
4
2002-01-16
HN1K06FU
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
5
2002-01-16
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