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IDP04E120 IDB04E120 Fast Switching EmCon Diode
Feature * 1200 V EmCon technology * Fast recovery * Soft switching * Low reverse recovery charge * Low forward voltage * Easy paralleling Product Summary VRRM IF VF T jmax
P-TO220-3.SMD
1200 4 1.65 150
P-TO220-2-2.
V A V C
Type IDP04E120 IDB04E120
Package P-TO220-2-2.
Ordering Code Q67040-S4388
Marking D04E120 D04E120
Pin 1 C NC
PIN 2 A C
PIN 3 A
P-TO220-3.SMD Q67040-S4386
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current
TC=25C TC=90C
Symbol VRRM IF
Value 1200 11.2 7.1
Unit V A
Surge non repetitive forward current
TC=25C, tp=10 ms, sine halfwave
I FSM I FRM Ptot
28 16.5 W 43.1 20.6
Maximum repetitive forward current
TC=25C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25C TC=90C
Operating and storage temperature Soldering temperature
1.6mm(0.063 in.) from case for 10s
Tj , Tstg TS
-55...+150 260
C C
Rev.2
Page 1
2003-07-31
IDP04E120 IDB04E120
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area 1)
Symbol min. RthJC RthJA RthJA -
Values typ. 35 max. 2.9 62 62 -
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Reverse leakage current
V R=1200V, T j=25C V R=1200V, T j=150C
Symbol min. IR VF -
Values typ. max.
Unit
A 1.65 1.7 100 350 V 2.15 -
Forward voltage drop
IF=4A, Tj=25C IF=4A, Tj=150C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air.
Rev.2
Page 2
2003-07-31
IDP04E120 IDB04E120
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time
V R=800V, IF=4A, di F/dt=750A/s, Tj=25C V R=800V, IF=4A, di F/dt=750A/s, Tj=125C V R=800V, IF=4A, di F/dt=750A/s, Tj=150C
Symbol min. t rr I rrm Q rr S -
Values typ. max.
Unit
ns 115 180 185 7.15 8 8.1 330 575 630 6 7.8 7.8 A nC -
Peak reverse current
V R=800V, IF = 4 A, diF/dt=750A/s, Tj=25C V R=800V, IF =4A, diF /dt=750A/s, T j=125C V R=800V, IF =4A, diF /dt=750A/s, T j=150C
Reverse recovery charge
V R=800V, IF=4A, di F/dt=750A/s, Tj=25C V R=800V, IF =4A, diF /dt=750A/s, T j=125C V R=800V, IF =4A, diF /dt=750A/s, T j=150C
Reverse recovery softness factor
V R=800V, IF=4A, di F/dt=750A/s, Tj=25C V R=800V, IF=4A, di F/dt=750A/s, Tj=125C V R=800V, IF=4A, di F/dt=750A/s, Tj=150C
Rev.2
Page 3
2003-07-31
IDP04E120 IDB04E120
1 Power dissipation Ptot = f (TC) parameter: Tj 150C
45
2 Diode forward current IF = f(TC) parameter: Tj 150C
12
W
35
A
10 9 8
P tot
30
IF
25 20 15 10 5 0 25 7 6 5 4 3 2 1 50 75 100 150 0 25
C TC
50
75
100
C TC
150
3 Typ. diode forward current IF = f (VF)
12
4 Typ. diode forward voltage VF = f (Tj)
2.4
A
10 9 8
-55C 25C 100C 150C
V
8A
2
7 6 5 4 3 2 1 0 0 0.5 1 1.5 2
VF
1.8
IF
4A
1.6
2A
1.4
1.2
V VF
3
1 -60
-20
20
60
100
160 C Tj
Rev.2
Page 4
2003-07-31
IDP04E120 IDB04E120
5 Typ. reverse recovery time trr = f (diF/dt) parameter: V R = 800V, T j = 125C
500
6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 800V, Tj = 125 C
900
ns
400 350
nC
800
8A
300 250 200 150 100 50 0 200
Q rr
trr
8A 4A 2A
750 700 650 600 550 500 450 400 200
4A
2A
300
400
500
600
700
800
A/s 1000 di F/dt
300
400
500
600
700
800
A/s 1000 diF/dt
7 Typ. reverse recovery current Irr = f (diF/dt) parameter: V R = 800V, T j = 125C
12
8 Typ. reverse recovery softness factor S = f(diF /dt) parameter: VR = 800V, Tj = 125C
20
A
8A 4A 2A
16 14
10
8A 4A 2A
S
300 400 500 600 700 800
9
Irr
12 10 8 6
8
7
6 4 5 2 0 200
4 200
A/s 1000 di F/dt
300
400
500
600
700
800
A/s 1000 diF/dt
Rev.2
Page 5
2003-07-31
IDP04E120 IDB04E120
9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T
10 1
IDP04E120
K/W
10 0
ZthJC
10 -1
D = 0.50 10 -2 single pulse 10 -3 0.20 0.10 0.05 0.02 0.01
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Rev.2
Page 6
2003-07-31
IDP04E120 IDB04E120
TO-220-2-2
A P
symbol [mm] min A 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 B C D E max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157
N
dimensions [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236
D U H B V
E
F W J G
F G H J K L M N P T U V W
1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40
0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157
X L
C
M
T K
X
Rev.2
Page 7
2003-07-31
IDP04E120 IDB04E120
TO-220-3-45 (P-TO220SMD)
dimensions symbol min A B C D E F G H K L M N P Q R S T U V W X Y Z [mm] max min 9.80 10.00 1.3 typ. 1.25 1.75 0.95 1.15 2.54 typ. 0.72 0.85 5.08 typ. 4.30 1.28 9.00 4.50 1.40 9.40 [inch] max 0.3858 0.3937 0.0512 typ. 0.0492 0.0689 0.0374 0.0453 0.1 typ. 0.0283 0.0335 0.2 typ. 0.1693 0.0504 0.3543 0.1772 0.0551 0.3701
2.30 2.50 14.1 typ. 0.00 0.20 3.30 3.90 8 max 1.70 2.50 0.50 0.65 10.8 typ. 1.35 typ. 6.43 typ. 4.60 typ. 9.40 typ. 16.15 typ.
0.0906 0.0984 0.5551 typ. 0.0000 0.0079 0.1299 0.1535 8 max 0.0669 0.0984 0.0197 0.0256 0.4252 typ. 0.0532 typ. 0.2532 typ. 0.1811 typ. 0.3701 typ. 0.6358 typ.
Rev.2
Page 8
2003-07-31
IDP04E120 IDB04E120
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev.2
Page 9
2003-07-31

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