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| Data Sheet No. PD-6.078 IR04H420 HIGH VOLTAGE HALF-BRIDGE Features n Output Power MOSFETs in half-bridge configuration n 500V Rated Breakdown Voltage n High side gate drive designed for bootstrap operation n Matched propagation delay for both channels n Independent high and low side output channels n Undervoltage lockout n 5V Schmitt-triggered input logic n Half-Bridge output in phase with IN n Cross conduction prevention logic n Internally set dead time n Shut down input turns off both channels Description The IR04H420 is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET(R) power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the halfbridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. The device can operate up to 500 volts. Product Summary VIN (max) ton/off trr RDS(on) PD (TA = 25 C) 500V 130 ns 270 ns 3.0 2.0W Package IR04H420 9506 Typical Connection UP V IN TO 500V DC BUS IR 0 4 H 4 2 0 V CC 1 V CC V B 6 IN 2 IN 9 V IN SD 3 SD VO 7 TO 4 COM LO AD COM IR04H420 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol VIN VB VO VIH VCC dv/dt PD RJA TJ TS TL Parameter Definition High Voltage Supply High Side Floating Supply Absolute Voltage Half-Bridge Output Voltage Logic Input Voltage (IN & SD) Low Side and Logic Fixed Supply Voltage Peak Diode Recovery dv/dt Package Power Dissipation @ TA +25C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds) Min. -0.3 -0.3 -0.3 -0.3 -0.3 -------55 -55 --- Max. 500 525 VIN + 0.3 VCC + 0.3 25 3.5 2.00 60 150 150 300 Units V V/ns W C/W C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. Symbol VB VIN VO VCC VIH ID TA Note 1: Parameter Definition High Side Floating Supply Absolute Voltage High Voltage Supply Half-Bridge Output Voltage Low Side and Logic Fixed Supply Voltage Logic Input Voltage (IN & SD) Continuous Drain Current (TA = 25C) (TA = 85C) Ambient Temperature Min. VO + 10 --(note 1) 10 0 -----40 Max. VO + 20 500 500 20 VCC 0.7 0.5 125 Units V A C Logic operational for VO of -5 to 500 V. Logic state held for VO of -5 to - VB. IR04H420 Dynamic Electrical Characteristics VBIAS (VCC, VB) = 15V and TA = 25C unless otherwise specified. Switching time waveform definitions are shown in figure 2. Symbol ton toff tr tf MT DT trr Qrr Parameter Definition Turn-On Propagation Delay (see note 2) Turn-Off Propagation Delay (see note 2) Turn-On Rise Time (see note 2) Turn-Off Fall Time (see note 2) Delay Matching, HS & LS Turn-On/Off Deadtime, LS Turn-Off to HS Turn-On & HS Turn-On to LS Turn-Off Reverse Recovery Time (MOSFET Body Diode) Reverse Recovery Charge (MOSFET Body Diode) TA = 25C Min. Typ. Max. Units Test Conditions ----------------600 90 80 40 30 500 260 0.7 720 200 120 70 --750 ----IF = 0.7 A di/dt = 100A/s VS = 0 V VS = 500 V ns C Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input voltage. This is shown as HO in figure 2. Static Electrical Characteristics VBIAS (VCC, VB) = 15V and TA = 25C unless otherwise specified. The Input voltage and current levels are referenced to COM. Symbol Parameter Definition TA = 25C Min. Typ. Max. Units 8.8 7.5 ------2.7 --2.7 ----------9.3 8.2 140 20 ----------20 --3.0 0.8 9.8 V 8.6 240 50 50 --0.8 --0.8 40 1.0 ----- Test Conditions Supply Characteristics VCCUV+ VCC Supply Undervoltage Positive Going Threshold VCCUV- VCC Supply Undervoltage Negative Going Threshold IQCC Quiescent VCC Supply Current IQBS Quiescent VBS Supply Current IOS Offset Supply Leakage Current Input Characteristics VIH Logic "1" Input Voltage VIL Logic "0" Input Voltage VSD,TH+ SD Input Positive Going Threshold VSD,TH- SD Input Negative Going Threshold IIN+ Logic "1" Input Bias Current IINLogic "0" Input Bias Current Output Characteristics RDS(on) Static Drain-to-Source On-Resistance VSD Diode Forward Voltage A VB = VS = 500V V VCC = 10V to 20V A A V ID = 700mA Tj = 150 C IR04H420 Functional Block Diagram VB 6 1 IRFC420 VIN 9 V CC IN 2 IR2104 3 IRFC420 7 VO SD 4 COM Lead Definitions Symbol VCC IN SD VB VIN VO COM Lead Description Logic and internal gate drive supply voltage. Logic input for high and low side gate driver outputs (HO and LO), in phase with HO Logic input for shutdown High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed to feed from VCC to VB. High voltage supply. Half-Bridge output. Logic and low side of Half-Bridge return. Lead Assignments 1 VCC 2 3 4 6 VB 7 V0 9 VIN IN SD COM 9 Lead SIP w/o Leads 5 & 8 IR04H420 IR04H420 IN IN(LO) 50% 50% IN(HO) ton tr 90% toff 90% tf ___ SD HO 10% 10% V+ VO 0 VO Figure 1. Input/Output Timing Diagram Figure 2. Switching Time Waveform Definitions IN (LO) 50% LO 50% HO 50% 50% IN (HO) IN MT 10% 90% LO HO 90% 10% MT LO 90% DT HO 10% Figure 4. Deadtime Waveform Definitions Figure 3. Delay Matching Waveform Definitions IR04H420 SD 50% tsd HO LO 90% Figure 5. Shutdown Waveform Definitions Package Outline WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA * (310)322-3331 * FAX (310)322-3332 * TELEX 472-0403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK * (44)0883 713215 * FAX (944)0883 714234 * TELEX 95219 Sales Offices, Agents and Distributors in Major Cities Throughout the World. (c) 1996 International Rectifier Printed in U.S.A. 3-96 Data and specifications subject to change without notice. |
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