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PD - 95162
IRF7101PBF
Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description
l
HEXFET(R) Power MOSFET
S1 G1 S2 G2
1 2 8 7
D1 D1 D2 D2
VDSS = 20V RDS(on) = 0.10 ID = 3.5A
3 4
6 5
Top View
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 100C IDM PD @TC = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Sodering Temperature, for 10 seconds
Max.
3.5 2.3 14 2.0 0.016 12 3.0 -55 to + 150 300(1.6mm from case)
Units
A W W/C V V/nS C
Thermal Resistance Ratings
RJA Maximum Junction-to-Ambient
Parameter
Min.
Typ.
Max
62.5
Units
C/W 10/6/04
IRF7101PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) VGS(th) g fs IDSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LD LS Ciss Coss C rss
Min. 20 1.0 1.1
Typ. 0.025 7.0 10 24 30 4.0 6.0 320 250 75
Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.10 VGS = 10V, ID = 1.8A 0.15 VGS = 4.5V, ID = 1.0A 3.0 V VDS = VGS, ID = 250A S VDS = 15V, ID = 3.5A 2.0 VDS = 20V, VGS = 0V A 250 VDS = 16V, V GS = 0V, TJ = 125 C 100 VGS = 12V nA -100 VGS = - 12V 15 ID = 1.8A 2.0 nC VDS = 16V 3.6 VGS = 10V VDD = 10V ID = 1.8A ns RG = 8.2 RD = 26 nH pF
D
Between lead,6mm(0.25in.) from package and center of die contact VGS = 0V VDS = 15V = 1.0MHz
G S
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 2.0 showing the A G integral reverse 14 p-n junction diode. S 1.2 V TJ = 25C, IS = 1.7A, VGS = 0V 36 54 ns TJ = 25C, IF = 1.7A 41 62 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%.
ISD 3.5A, di/dt 90A/s, VDD V(BR)DSS,
TJ 150C
Surface mounted on FR-4 board, t 10sec.
IRF7101PBF
IRF7101PBF
C,
IRF7101PBF
100
Thermal Response (Z thJA )
D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100
0.1 0.0001
10
t1, Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7101PBF
V DS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
RD
VDS 90%
D.U.T.
+
- V DD
10% VGS
td(on) tr t d(off) tf
Fig 11a. Switching Time Test Circuit
Fig 11b. Switching Time Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
10V
D.U.T. + V - DS
QGS VG
QGD
VGS
3mA
IG
ID
Charge
Current Sampling Resistors
Fig 12a. Gate Charge Test Circuit
Fig 12b. Basic Gate Charge Waveform
IRF7101PBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS
IRF7101PBF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H
1
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
K L y
e1
A
K x 45 C 0.10 [.004] y 8X c
8X b 0.25 [.010]
A1 CAB
8X L 7
NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255]
FOOT PRINT 8X 0.72 [.028]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER
INT ERNAT IONAL RECT IFIER LOGO
XXXX F 7101
IRF7101PBF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04

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