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PD-94340B
HEXFET(R) POWER MOSFET THRU-HOLE (TO-39)
Product Summary
Part Number
IRF7F3704 BVDSS
IRF7F3704 20V, N-CHANNEL
20V
RDS(on) 0.035
ID 12A*
Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
TO-39
Features:
n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 12* 12* 48 20 0.16 16 190 12 2.0 0.5 -55 to 150 300 ( 0.063 in./1.6mm from case for 10s) 0.98 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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10/10/05
IRF7F3704
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
20 -- -- -- 1.0 20 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.024 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 0.035 0.04 3.0 -- 20 100 100 -100 19 8.0 6.0 30 175 175 100 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 12A A V GS = 4.5V, ID = 12A VDS = VGS, ID = 250A VDS =10V, IDS = 12A A VDS = 20V ,VGS=0V VDS = 16V, VGS = 0V, TJ =125C VGS = 16V VGS = -16V VGS =4.5V, ID = 12A VDS = 10V VDD = 10V, ID = 12A, VGS = 4.5V, RG = 1.8
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD l Ciss C oss C rss
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1860 990 55
-- -- --
pF
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 10V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 12* 48 1.3 57 60
Test Conditions
A
V ns nC Tj = 25C, IS = 12A, VGS = 0V A Tj = 25C, IF = 12A, di/dt 100A/s VDD 16V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 6.25 175
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
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IRF7F3704
100
VGS 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP
100
VGS 10.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
3.5V
3.5V
10
10
1 0.1 1
20s PULSE WIDTH Tj = 25C
10 100
20s PULSE WIDTH Tj = 150C
1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 12A
I D , Drain-to-Source Current (A)
1.5
TJ = 25 C TJ = 150 C
1.0
0.5
10 3.5
V DS =15 15V 20s PULSE WIDTH 4.0 4.5 5.0 5.5
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7F3704
2800 2400
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
10
ID = 12A
8
VDS = 16V VDS = 10V
C, Capacitance (pF)
2000 1600 1200 800 400 0
Ciss Coss
6
4
2
Crss
1 10 100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 10 20 30
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
TJ = 150 C
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
TJ = 25 C
10
100s
10
1ms
1
0.1 0.4
V GS = 0 V
0.8 1.2 1.6 2.0 2.4 2.8 3.2
1 1
Tc = 25C Tj = 150C Single Pulse 10
10ms
VSD ,Source-to-Drain Voltage (V)
100
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF7F3704
20
LIMITED BY PACKAGE
16
V DS V GS RG
RD
D.U.T.
+
ID , Drain Current (A)
-V DD
12
VGS
Pulse Width 1 s Duty Factor 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS 90%
0
25
50
TC , Case Temperature ( C)
75
100
125
150
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 0.20 1 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF7F3704
500
EAS , Single Pulse Avalanche Energy (mJ)
TOP
400
15V
BOTTOM
ID 5.4A 7.6A 12A
VDS
L
DRIVER
300
RG
D.U.T.
IAS tp
+ V - DD
VGS 20V
A
200
0.01
100
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
0
25
Starting TJ , Junction Temperature ( C)
50
75
100
125
150
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
4.5V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRF7F3704
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 15 V, Starting TJ = 25C, L= 2.7mH Peak IAS =12A, VGS = 10V, RG= 25
ISD 12A, di/dt 80A/s, Pulse width 300 s; Duty Cycle 2%
VDD 20V, TJ 150C
Case Outline and Dimensions -- TO-205AF (Modified TO-39)
LEGEND 1- SOURCE 2- GATE 3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/2005
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