View IRF7MS2907_1255681.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 94609
HEXFET(R) POWER MOSFET THRU-HOLE (Low-ohmic TO-254AA)
IRF7MS2907 75V, N-CHANNEL
Product Summary
Part Number
IRF7MS2907 BVDSS
75V
RDS(on) ID 0.0055 45A*
Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
Low-Ohmic TO-254AA
Features:
n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 45* 45* 180 208 1.67 20 760 45 20.8 2.2 -55 to 150 300 (0.063in./1.6mm from case for 10s) 4.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
www.irf.com
1
04/14/03
IRF7MS2907
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
75 -- -- 2.0 70 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.087 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.0055 4.0 -- 20 250 100 -100 375 60 150 40 135 175 75 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 45A VDS = VGS, ID = 250A VDS > 15V, IDS = 45A VDS= 75V ,VGS=0V VDS = 60V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 10V, ID = 45A VDS = 60V VDD = 38V, ID = 45A VGS = 10V, RG = 1..2
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
12060 2280 605
-- -- --
pF
VGS = 0V, VDS =25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 45* 180 1.0 175 850
Test Conditions
A
V ns nC Tj = 25C, IS = 45A, VGS = 0V Tj = 25C, IF = 45A, di/dt 100A/s VDD 25V
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max
-- -- 0.6
Units
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
www.irf.com
IRF7MS2907
1000
ID , Drain-to-Source Current (A)
100
ID , Drain-to-Source Current (A)
VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
4.5V 20s PULSE WIDTH Tj = 25C 10 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
20s PULSE WIDTH Tj = 150C 10 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
ID = 45A
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID , Drain-to-Source Current ( )
2.0
100
T J = 150C
1.5
T J = 25C 10
1.0
1 3 3.5 4
VDS = 25V 20s PULSE WIDTH 15 4.5 5 5.5 6
0.5
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRF7MS2907
20000
16000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 45A
16
VDS = 60V VDS = 37V VDS = 15V
C, Capacitance (pF)
Ciss
12000
12
8000
C oss C rss
8
4000
4
0 1 10 100
0 0 100 200
FOR TEST CIRCUIT SEE FIGURE 13
300 400 500
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED BY R (on) DS
ISD , Reverse Drain Current ( )
100
T J = 150C
ID, Drain-to-Source Current (A)
100
10
T J = 25C
100s 1ms
10 Tc = 25C Tj = 150C Single Pulse 0.1 1 10
1 VGS = 0V 0.2 0.4 0.6 0.8 1.0 1.2 1.4
10ms 100 1000
0.1
1
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRF7MS2907
160
LIMITED BY PACKAGE
120
V DS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
-V DD
VGS
80
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01
PDM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF7MS2907
2000
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
1600
ID 20A 28.5A BOTTOM 45A TOP
VDS
L
D R IV E R
1200
RG
2VV 0 GS tp
D .U .T.
IA S
+ V - DD
A
800
0 .0 1
400
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
10V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRF7MS2907
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 0.75mH Peak I AS = 45A, VGS =10V, RG= 25
ISD 45A, di/dt 380A/s, Pulse width 300 s; Duty Cycle 2%
VDD 75V, TJ 150C
Case Outline and Dimensions -- Low-ohmic TO-254AA
0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 0.12 [.005] 1.27 [.050] 1.02 [.040]
17.40 [.685] 16.89 [.665] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B
22.73 [.895] 21.21 [.835]
17.40 [.685] 16.89 [.665] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B R 1.52 [.060]
C
17.40 [.685] 16.89 [.665]
0.84 [.033] MAX.
4.82 [.190] 3.81 [.150] 3.81 [.150]
4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] BA
3X 3.81 [.150] 2X
1.14 [.045] 0.89 [.035] 0.36 [.014] BA
3.81 [.150]
2X
NOTES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIME NS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. CONTROLLING DIMENS ION: INCH. CONFORMS T O JEDEC OUTLINE T O-254AA.
PIN AS S IGNMENTS 1 = DRAIN 2 = S OURCE 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/03
www.irf.com
7

▲Up To Search▲

Price & Availability of IRF7MS2907

	To Download IRF7MS2907 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .