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PD - 94633A
INSULATED GATE BIPOLAR TRANSISTOR
Features
* * * * * Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175C.
IRGB4B60K IRGS4B60K IRGSL4B60K
C
VCES = 600V IC = 6.8A, TC=100C
G E
tsc > 10s, TJ=150C
Benefits
* Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Excellent Current Sharing in Parallel Operation.
n-channel
VCE(on) typ. = 2.1V
TO-220 IRGB4B60K
D2Pak IRGS4B60K
TO-262 IRGSL4B60K
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC = 25C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current
Max.
600 12 6.8
Units
V A
c
24 24 20 63 31 -55 to +175 C 300 (0.063 in. (1.6mm) from case) V W
Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
PD @ TC = 100C Maximum Power Dissipation
Thermal / Mechanical Characteristics
Parameter
RJC RCS RJA RJA Wt Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state)d Weight
Min.
--- --- --- --- ---
Typ.
--- 0.50 --- --- 1.44
Max.
2.4 --- 62 40 ---
Units
C/W
g
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1
8/4/03
IRGB/S/SL4B60K
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units
-- 0.28 2.1 2.5 2.6 4.5 -8.1 1.7 1.0 54 300 -- -- -- 2.5 2.8 2.8 5.5 -- -- 150 300 800 100 nA A V V
Conditions
VGE = 0V, IC = 500A
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- -- VCE(on) VGE(th) VGE(th)/TJ gfe ICES IGES Collector-to-Emitter Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current -- -- 3.5 -- -- -- -- -- --
V/C VGE = 0V, IC = 1mA (25C-150C) IC = 4.0A, VGE = 15V, TJ = 25C V IC = 4.0A, VGE = 15V, TJ = 150C IC = 4.0A, VGE = 15V, TJ = 175C VCE = VGE, IC = 250A
5,6,7 9,10,11
9,10,11 12
mV/C VCE = VGE, IC = 1mA (25C-150C) S VCE = 50V, IC = 4.0A, PW = 80s VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C VGE = 0V, VCE = 600V, TJ = 175C VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area
Min. Typ. Max. Units
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 12 1.7 6.5 73 47 120 22 18 100 66 130 83 220 22 18 120 79 190 25 6.2 -- -- -- 80 53 130 28 23 110 80 150 140 280 27 22 130 89 -- -- -- pF VGE = 0V VCC = 30V ns J ns J nC IC = 4.0A VCC = 400V VGE = 15V
Conditions
Ref.Fig.
23 CT1
IC = 4.0A, VCC = 400V VGE = 15V, RG = 100, L = 2.5mH TJ = 25C
CT4
e
IC = 4.0A, VCC = 400V VGE = 15V, RG = 100, L = 2.5mH TJ = 25C IC = 4.0A, VCC = 400V VGE = 15V, RG = 100, L = 2.5mH TJ = 150C
CT4 13,15 WF1,WF2 14,16 CT4 WF1 WF2 CT4
e
IC = 4.0A, VCC = 400V VGE = 15V, RG = 100, L = 2.5mH TJ = 150C
22
FULL SQUARE 10 -- -- s
f = 1.0MHz TJ = 150C, IC = 24A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 100 TJ = 150C, Vp = 600V, RG = 100 VCC=360V,VGE = +15V to 0V
4 CT2 CT3 WF3
Note to are on page 16
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IRGB/S/SL4B60K
12 10 8 6 4
70 60 50
Ptot (W)
0 20 40 60 80 100 120 140 160 180 T C (C)
IC (A)
40 30 20
2 0
10 0 0 20 40 60 80 100 120 140 160 180 T C (C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
100
100
10 100s
IC (A)
IC A)
10
1 1ms 0.1 10ms
1
DC 0.01 0 1 10 100 1000 10000 VCE (V)
0 10 100 VCE (V) 1000
Fig. 3 - Forward SOA TC = 25C; TJ 150C
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V
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IRGB/S/SL4B60K
30 25 20
ICE (A)
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A)
30 25 20 15 10 5 0 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
15 10 5 0 0 2 4 6 VCE (V) 8 10 12
0
2
4
6 VCE (V)
8
10
12
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
25 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
20
ICE (A)
15
10
5
0 0 2 4 6 VCE (V) 8 10 12
Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 80s
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IRGB/S/SL4B60K
20 18 16 14
VCE (V) VCE (V)
20 18 16 14 ICE = 2.0A ICE = 4.0A ICE = 8.0A 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 2.0A ICE = 4.0A ICE = 8.0A
12 10 8 6 4 2 0
Fig. 8 - Typical VCE vs. VGE TJ = -40C
Fig. 9 - Typical VCE vs. VGE TJ = 25C
20 18
ID, Drain-to-Source Current ()
30
16 14
VCE (V)
25
T J = 25C
20
12 10 8 6 4 2 0 5 10 VGE (V)
ICE = 2.0A ICE = 4.0A ICE = 8.0A
15
TJ = 150C
10
5
0
15
20
0
5
10
15
20
VGS , Gate-to-Source Voltage (V)
Fig. 10 - Typical VCE vs. VGE TJ = 150C
Fig. 11 - Typ. Transfer Characteristics VCE = 360V; tp = 10s
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IRGB/S/SL4B60K
350 300
Swiching Time (ns)
1000
250
Energy (J)
EON
100
td OFF tF tdON
10
200 150 100 50 0 1 2 3 4 5 6 7 8 9 10 IC (A) EOFF
tR
1 0 2 4 6 8 10
IC (A)
Fig. 12 - Typ. Energy Loss vs. IC TJ = 150C; L=2.5mH; VCE= 400V, RG= 100; VGE= 15V
Fig. 13 - Typ. Switching Time vs. IC TJ = 150C; L=2.5mH; VCE= 400V RG= 100; VGE= 15V
350 300 250
1000
EON
200 150 100 50 0 0 100 200 300 400 500
Swiching Time (ns)
Energy (J)
tdOFF
100
EOFF
tF
tdON tR
10 0 100 200 300 400 500
RG ( )
RG ( )
Fig. 14 - Typ. Energy Loss vs. RG TJ = 150C; L=2.5mH; VCE= 400V ICE= 4.0A; VGE= 15V
Fig. 15 - Typ. Switching Time vs. RG TJ = 150C; L=2.5mH; VCE= 400V ICE= 4.0A; VGE= 15V
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IRGB/S/SL4B60K
1000
16
Cies
14 300V 12 400V 10
Capacitance (pF)
100
Coes
VGE (V)
40 60 80 100
8 6 4 2
10
Cres
1 0 20
0 0 2 4 6 8 10 12 14
VCE (V)
Q G , Total Gate Charge (nC)
Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
Fig. 17 - Typical Gate Charge vs. VGE ICE = 4.0A; L = 3150H
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10
J R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
0.1
0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
Ri (C/W) i (sec) 0.0429 0.000001 1.3417 1.0154 0.000178 0.000627
1
2
Ci= i/Ri Ci i/Ri
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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IRGB/S/SL4B60K
L
L DUT
0
VCC
80 V
+ -
DUT
480V
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp / DUT
Driver
DC
L
360V
- 5V DUT / DRIVER
Rg
VCC
DUT
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
R=
VCC ICM
DUT
Rg
VCC
Fig.C.T.5 - Resistive Load Circuit
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IRGB/S/SL4B60K
700 tf 600 Vce 500 90% Ice 400 5% Vce Vce (V) Ice (A)
Vce (V)
14 12 10 8 6 4 Ice 2 0 Eoff Loss -2 0.4 0.6 0.8 Time (uS) 1 1.2
700 600 500 400 300 200 100 0 -100 0.35 Eon Loss 0.45 0.55 Time (uS) 0.65 tr Vce Ice 90% Ice 10% Ice 5% Vce
14 12 10 8 6 4 2 0 -2 Ice (A)
300 200 100 0 -100
5% Ice
Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4
400 350 300 250
Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4
40 35 30 25 20 15 10 5 0 -5 (A) ICE (A) I
Vce
VCE (V)
Ice
200 150 100 50 0 -50 30 40 50 Time (uS) 60 70
Fig. WF3- Typ. S.C Waveform @ TC = 150C using Fig. CT.3
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IRGB/S/SL4B60K
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103)
10.54 (.415) 10.29 (.405)
3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) MIN 1 2 3
1 - GATE
LEAD ASSIGNMENTS 2 - DRAIN
1 - GATE 2 -COLLECTOR
3 EMITTER 3 - SOURCE
4 - DRAIN 4 - COLLECTOR 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140)
3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES:
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.92 (.115) 2.64 (.104)
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C
10
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IRGB/S/SL4B60K
D2Pak Package Outline
D2Pak Part Marking Information
T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER F 530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L
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IRGB/S/SL4B60K
TO-262 Package Outline
IGBT 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER
DATE CODE YEAR 7 = 1997 WEEK 19 LINE C
12
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IRGB/S/SL4B60K
D2Pak Tape & Reel Information
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197) MAX.
26.40 (1.039) 24.40 (.961) 3
4
Notes: VCC = 80% (VCES), VGE = 20V, L = 100H, RG = 50. When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode FD059H06A5.
TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 8/03
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