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PD - 94685B
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on) ID IRHLF7970Z4 100K Rads (Si) 1.2 -1.6A IRHLF7930Z4 300K Rads (Si) 1.2 -1.6A
IRHLF7970Z4 60V, P-CHANNEL
TECHNOLOGY
c
International Rectifier's R7 TM Logic Level Power Mosfets provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within accptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
T0-39
Features:
n n n n n n n n n
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary N-Channel Available IRHLF770Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = -4.5V, TC = 25C ID @ VGS = -4.5V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -1.6 -1.0 -6.4 5.0 0.04 10 10 -1.6 0.5 -4.0 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063in/1.6mm from case for 10s) 0.98 ( Typical )
g
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1
04/07/04
IRHLF7970Z4
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-60 -- -- -1.0 1.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.06 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 1.2 -2.0 -- -1.0 -10 -100 100 4.0 1.5 1.8 18 20 15 25 -- V V/C V S( ) A
Test Conditions
VGS = 0V, I D = -250A Reference to 25C, ID = -1.0mA VGS = -4.5V, ID = -1.0A VDS = VGS, ID = -250A VDS = -10V, IDS = -1.0A VDS= -48V ,VGS=0V VDS = -48V, VGS = 0V, TJ =125C VGS = -10V VGS =10V VGS = -4.5V, ID = -1.6A VDS = -30V VDD = -30V, ID = -1.6A, VGS =-4.5V, RG = 24
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH Measured from Drain lead (6mm /0.25in
from package) to Source lead(6mm/0.25in from packge)with Source wire internally bonded from Source pin to Drain pad
C iss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
-- -- -- --
177 40 8.0 28
-- -- -- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz f = 5.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -1.6 -6.4 -5.0 50 50
Test Conditions
A
V ns nC Tj = 25C, IS = -1.6A, VGS = 0V Tj = 25C, IF =-1.6A, di/dt -100A/s VDD -25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 25
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHLF7970Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Diode Forward Voltage 100K Rads(Si)1 Min Max -60 -1.0 -- -- -- -- -- -- -2.0 -100 100 -1.0 1.2 -5.0 300KRads(Si)2 Min Max -60 -1.0 -- -- -- -- -- -- -2.0 -100 100 -10 1.2 -5.0 Units V nA A V
Test Conditions
VGS = 0V, ID = -250A VGS = VDS, ID = -250A VGS =-10V VGS = 10 V VDS=-48V, VGS =0V VGS = -4.5V, ID =-1.0A VGS = 0V, IS = -1.6A
1. Part number IRHLF7970Z4 2. Part number IRHLF7930Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
(MeV/(mg/cm2)) Br I Au 37.9 59.9 82.3
Energy Range
(MeV) 285 345 357 (m) 36.8 32.7 28.5 0V -60 -60 -60 2V -60 -60 -60 4V -60 -60 -60 5V -60 -60 -60
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
6V -60 -60 -
7V -50 -20 -
8V -35 -
10V -25 -
-70 -60 -50 -40 -30 -20 -10 0 0 2 4 6 VGS 8 10 12
Br I Au
For footnotes refer to the last page
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VDS
Fig a. Single Event Effect, Safe Operating Area
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IRHLF7970Z4
Pre-Irradiation
10
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS TOP -10V -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V BOTTOM -2.25V
10
VGS -10V -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V BOTTOM -2.25V TOP
1
-2.25V
1
-2.25V
60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
T J = 150C
RDS(on) , Drain-to-Source On Resistance (Normalized)
T J = 25C
ID = -1.6A
-I D , Drain-to-Source Current ( )
1.5
1
1.0
0.5
VDS = -25V 15 60s PULSE WIDTH 0.1 1 2 3 4 5 6 7 8 -V GS, Gate-to-Source Voltage (V)
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHLF7970Z4
250
-VGS , Gate-to-Source Voltage (V)
200
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
12
ID = -1.6A
10
VDS = -48V VDS = -30V VDS = -12V
C, Capacitance (pF)
Ciss
8
150
6
100
C oss
50
4
2
C rss
0 1 10 100
0 0 1 2
FOR TEST CIRCUIT SEE FIGURE 13
3 4 5
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
10
OPERATION IN THIS AREA LIMITED BY RDS(on)
-I SD , Reverse Drain Current ( )
T J = 150C T J = 25C
-I D , Drain-to-Source Current (A)
100s 1
1
1ms Tc = 25C Tj = 150C Single Pulse 1 10 10ms 100 1000
0.1 0 1 2 3 4
VGS = 0V 5 6 7
0.1
-VSD , Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHLF7970Z4
Pre-Irradiation
1.6
VDS VGS
RD
1.3
D.U.T.
+
-I D , Drain Current (A)
1.0
VGS
Pulse Width 1 s Duty Factor 0.1 %
0.6
Fig 10a. Switching Time Test Circuit
0.3
VGS 10%
td(on) tr t d(off) tf
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
90% VDS
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJC)
D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.1 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
PDM t1 t2
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
RG
V DD
Pre-Irradiation
IRHLF7970Z4
VDS
L
25
EAS , Single Pulse Avalanche Energy (mJ)
RG
D .U .T IA S D R IV E R
0 .0 1
+
VD D V DD A
20
ID -0.7A -1.0A BOTTOM -1.6A TOP
VGS -2 0 V
tp
15
15V
10
5
Fig 12a. Unclamped Inductive Test Circuit
IAS
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
-12V 12V
.2F .3F
-4.5V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
VDS
7
IRHLF7970Z4
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = - 25V, starting TJ = 25C, L= 8.0mH Peak IL = -1.6A, VGS = -10V I SD -1.6A, di/dt -170A/s, VDD - 60V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
-10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-205AF (Modified TO-39)
LEGEND 1- SOURCE 2- GATE 3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2004
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