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PD-94666B
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level IRHMS597Z60 100K Rads (Si) IRHMS593Z60 300K Rads (Si) RDS(on) 0.014 0.014 ID -45A* -45A*
IRHMS597Z60 30V, P-CHANNEL
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TECHNOLOGY
Low-Ohmic TO-254AA
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight
Absolute Maximum Ratings
Parameter
ID @ V GS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page -45* -45* -180 208 1.67 20 1250 -45 20.8 -0.6 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063in./1.6mm from case for 10s) 9.3 ( Typical )
g
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1
07/05/05
IRHMS597Z60
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage
Min
-30
Typ Max Units
-- -0.032 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.014 -4.0 -- -10 -25 -100 100 160 60 65 35 150 100 80 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -45A A VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -45A A VDS= -24V ,VGS=0V VDS = -24V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -45A VDS = -15V VDD = -15V, ID = -45A V GS =-12V, RG = 2.35
BVDSS /T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 39 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
nA nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
-- -- -- --
7844 4508 564 2.1
-- -- -- --
pF
VGS = 0V, VDS = -25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -45* -180 -5.0 150 440
Test Conditions
A
V ns nC Tj = 25C, IS = -45A, VGS = 0V A Tj = 25C, IF =-45A, di/dt -100A/s VDD -25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 0.21 -- 0.6 -- 48 C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHMS597Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source On-State A Resistance(Low-OhmicTO-254AA) Diode Forward Voltage A 100K Rads(Si)1 Min Max -30 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.014 0.014 -5.0 300KRads(Si)2 Min Max -30 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.014 0.014 -5.0 Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA V GS = VDS, ID = -1.0mA VGS =-20V VGS = 20 V VDS = -24V, VGS =0V VGS = -12V, ID = -45A VGS = -12V, ID = -45A VGS = 0V, IS = -45A
1. Part number IRHMS597Z60 2. Part number IRHMS593Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET (MeV/(mg/cm2)) 37.5 59.7 81.4 Energy (MeV) 278.5 320 332 VDS (V) Range (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 36 - 30 - 30 - 30 - 30 - 30 31 - 30 - 30 - 30 - 30 - 25 27 - 30 - 30 - 30 - 25 --
-35 -30 -25 -20 -15 -10 -5 0 0 5 10 VGS 15 20
Br I Au
VDS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHMS597Z60
Pre-Irradiation
10000
10000
-I D, Drain-to-Source Current (A)
VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-I D, Drain-to-Source Current (A)
1000
1000
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
-5.0V
100 -5.0V
10 60s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
10 60s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1.5
T J = 150C T J = 25C
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -45A
-I D, Drain-to-Source Current (A)
1.0
VDS = -20V 15 60s PULSE WIDTH 10 5 5.5 6 6.5 7 -VGS, Gate-to-Source Voltage (V)
VGS = -12V
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHMS597Z60
14000 12000 10000 8000 6000 4000 2000 0 1
-VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
20 ID = -45A 16 VDS= -24V VDS= -15V
C, Capacitance (pF)
Ciss Coss
12
8
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 20 40 60 80 100 120 140 160 180
Crss
10 100
-VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
-I D, Drain-to-Source Current (A)
-I SD , Reverse Drain Current (A)
100
T J = 150C
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
100s
TJ = 25C 10
1ms
Tc = 25C Tj = 150C Single Pulse 1 10 -VDS , Drain-to-Source Voltage (V)
VGS = 0V 1 0 1 2 3 4 -V SD , Source-to-Drain Voltage (V)
10ms
100
10
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHMS597Z60
Pre-Irradiation
120
LIMITED BY PACKAGE
100
V DS V GS RG
RD
D.U.T.
+
-ID , Drain Current (A)
80
V GS
60
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
20
VGS 10%
0
25
50
75
100
125
150
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
0.01
0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
P DM t1 t2
0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
V DD
Pre-Irradiation
IRHMS597Z60
EAS, Single Pulse Avalanche Energy (mJ)
VDS
L
3500 3000 2500 2000 1500 1000 500 0
RG
D.U.T
IAS
+
DRIVER
V DD VDD
A
ID -20A -28.5A BOTTOM -45A TOP
VGS -20V
tp
0.01
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
25
Starting TJ , Junction Temperature (C)
50
75
100
125
150
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
-12 V
-12V 12V
.2F .3F
QGS
QGD
VDS
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IRHMS597Z60
Pre-Irradiation
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = -25V, starting TJ = 25C, L =1.1mH Peak IL = -45A, VGS = -12V A ISD -45A, di/dt -184A/s, VDD -30V, TJ 150C -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. -24 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- Low-Ohmic TO-254AA
3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 0.12 [.005] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
17.40 [.685] 16.89 [.665]
1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B
C
14.48 [.570] 12.95 [.510]
0.84 [.033] MAX.
3X
3.81 [.150]
2X
1.14 [.045] 0.89 [.035] 0.36 [.014] BA
3.81 [.150]
NOT ES :
1. 2. 3. 4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/2005
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