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Provisional Data Sheet No. PD-9.1476A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET(R) TRANSISTOR
IRHN2C50SE IRHN7C50SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
600 Volt, 0.60, (SEE) RAD HARD HEXFET
International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Product Summary
Part Number IRHN2C50SE IRHN7C50SE BVDSS 600V RDS(on) 0.60 ID 10.4A
Features:
s s s s s s s s s s s s s
Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-Weight
Absolute Maximum Ratings
Parameter
ID @ V GS = 12V, TC = 25C I D @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight 10.4 6.5 41.6 150 1.2 20 500 10.4 15 3.0 -55 to 150
Pre-Radiation
IRHN2C50SE, IRHN7C50SE Units A
W W/K V mJ A mJ V/ns
300 (for 5 seconds) 2.6 (typical)
oC
g
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Pre-Radiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min.
600 -- -- -- 2.5 3.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ. Max. Units
-- 0.45 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.0 -- -- 0.60 0.65 4.5 -- 50 250 100 -100 150 30 75 55 190 210 130 -- V V/C V S( ) A nA nC
Test Conditions
VGS = 0V, ID = 1.0 mA Reference to 25C, ID = 1.0 mA VGS = 12V, ID = 6.5A VGS = 12V, I D = 10.4A VDS = VGS, ID = 1.0 mA VDS > 15V, IDS = 6.5A VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 10.4A VDS = Max. Rating x 0.5 VDD = 300V, ID = 10.4A, RG = 2.35
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
ns
LS
Internal Source Inductance
--
6.5
--
nH
Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
2700 300 61
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
-- -- -- -- 10.4 41.6
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier.
A
VSD t rr Q RR t on
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Tj = 25C, IS = 10.4A, V GS = 0V Tj = 25C, IF = 10.4A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. -- -- -- -- -- -- 1.62 1200 16 V ns C
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min. Typ. Max. Units
-- -- -- TBD 0.83 K/W --
Test Conditions
soldered to a copper-clad PC board
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Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 0.5 x 105 Rads (Si) and 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHN2C50SE and IRHN7C50SE, respectively. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened HEXFETs have been characterized in neutron and heavy ion Single Event Effects (SEE) environments. Single Event Effects characterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
IRHN2C50SE 50K Rads (Si) IRHN7C50SE 100K Rads (Si) Units Test Conditions Min. Max. 600 -- VGS = 0V, I D = 1.0 mA BV DSS Drain-to-Source Breakdown Voltage V VGS(th) Gate Threshold Voltage 2.0 4.5 VGS = VDS, I D = 1.0 mA I GSS Gate-to-Source Leakage Forward -- 100 VGS = 20V nA I GSS Gate-to-Source Leakage Reverse -- -100 VGS = -20V IDSS Zero Gate Voltage Drain Current -- 50 A VDS = 0.8 x Max Rating, VGS = 0V RDS(on)1 Static Drain-to-Source -- 0.60 VGS = 12V, ID = 6.5A On-State Resistance One VSD Diode Forward Voltage -- 1.62 V TC = 25C, IS = 10.4A, VGS = 0V
Table 2. High Dose Rate
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
VDSS I PP di/dt L1 Drain-to-Source Voltage
Min. Typ Max. Min. Typ. Max. Units Test Conditions -- -- 480 -- -- 480 V Applied drain-to-source voltage during gamma-dot -- 6.4 -- -- 6.4 -- A Peak radiation induced photo-current -- -- 16 -- -- 2.3 A/sec Rate of rise of photo-current 20 -- -- 137 -- -- H Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Parameter
BV DSS
Typ.
600
Units
V
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence (ions/cm2)
1 x 105
Range (m)
~35
VDS Bias (V)
480
VGS Bias (V)
-5
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IRHN2C50SE, IRHN7C50SE Devices
Repetitive Rating; Pulse width limited by
maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = 50V, Starting TJ = 25C, EAS = [0.5 * L * (IL2) * [BV DSS/(BV DSS-VDD)] Peak IL = 10.4A, VGS = 12V, 25 RG 200 ISD 10.4A, di/dt 130A/s, VDD BV DSS, TJ 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
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Radiation Characteristics
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and V GS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications.

Case Outline and Dimensions -- SMD-1
Notes: 1. Dimensioning and Tolerancing per ANSI Y14.5M-1982 2. Controlling Dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4 Dimension includes metallization flash 5 Dimension does not include metallization flash
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