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PD - 91741A
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
Product Summary
Part Number IRHNB7460SE RDS(on) Radiation Level RDS(on) 100K Rads (Si) 0.32 ID 20A
IRHNB7460SE 500V, N-CHANNEL
RAD Hard HEXFET TECHNOLOGY
(R)
SMD-3
International Rectifiers RADHardTM HEXFET(R) MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
! ! ! ! ! ! ! ! !
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight For footnotes refer to the last page
Pre-Irradiation
Units
20 12 80 300 2.4 20 500 20 30 3.8 -55 to 150 300 (for 5 sec.) 3.5(Typical)
A
W
W/C
V mJ A mJ V/ns
o
C
g
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1
6/4/01
IRHNB7460SE
Pre-Irradiation
@ Tj = 25C (Unless Otherwise Specified) Min
500 2.5 60
Electrical Characteristics
Parameter
Typ Max Units
0.66 4.0 0.32 0.36 4.5 50 250 100 -100 220 50 110 35 100 100 100 V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 12A VGS = 12V, ID = 20A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 12A VDS= 400V ,VGS=0V VDS = 400V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 20A VDS = 250V VDD =250V, ID =20A, VGS =12V, RG = 2.35
BVDSS Drain-to-Source Breakdown Voltage BV DSS /TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance

3500 730 260

pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
20 80 1.8 800 16
Test Conditions
A
V nS C Tj = 25C, IS = 20A, VGS = 0V Tj = 25C, IF = 20A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
M i n Typ Max Units
1.6 0.42
C/W
Test Conditions
Soldered to a 2 inch square clad PC board
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
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Pre-Irradiation
IRHNB7460SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source# $ On-State Resistance (TO-3) Static Drain-to-Source# $ On-State Resistance (SMD-3) Diode Forward Voltage# $
Min
500 2.0
100K Rads (Si)
Max
4.5 100 -100 50 0.32 0.32 1.8
Units
V nA A V
Test Conditions "
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 400V, VGS=0V VGS = 12V, ID = 12A VGS = 12V, ID = 12A VGS = 0V, ID = 20A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br Ni LET MeV/(mg/cm )) 28 36.8 26.6 Energy (MeV) 285 305 265 Range (m) @V/5=0V @V/5=-5V 43 375 375 39 350 350 42 375 V,5 (V) @V/5=-10V @V/5=-15V @V/5=-20V 375 375 375 350 325 300
400 300 VDS 200 100 0 0 -5 -10 VGS -15 -20
Cu Br Ni
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNB7460SE
Pre-Irradiation
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1
5.0V
1
0.1
5.0V
20us PULSE WIDTH TJ = 25 oC
1 10 100
0.01 0.1
0.1 0.1
20us PULSE WIDTH TJ = 150 o C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
18A ID = 20A
I D , Drain-to-Source Current (A)
TJ = 150 o C
10
2.0
1.5
TJ = 25 o C
1
1.0
0.5
0.1 5.0
V DS = 50V 20s PULSE WIDTH
6.0 7.0 8.0 9.0 10.0 11.0 12.0
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHNB7460SE
8000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 20A 18A VDS = 400V VDS = 250V VDS = 100V
16
C, Capacitance (pF)
6000
Ciss
4000
12
Coss Crss
8
2000
4
0
1
10
100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 40 80 120 160 200
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C
10
ID , Drain Current (A)
100 10us
1
TJ = 25 C
100us 10 1ms
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8 2.2
1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms 1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHNB7460SE
Pre-Irradiation
20
VDS VGS
RD
16
ID, Drain Current (Amps)
RG
D.U.T.
+
-VDD
12
VGS
Pulse Width 1 s Duty Factor 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS 90%
0 25 50 75 100 125
A
150
TC , Case Temperature (C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNB7460SE
1000
EAS , Single Pulse Avalanche Energy (mJ)
TOP
800
15V
BOTTOM
ID 8A 11A 18A 20A
VDS
L
DRIVER
600
RG
D.U.T.
IAS tp
+ - VDD
V/5 20V
A
400
0.01
Fig 12a. Unclamped Inductive Test Circuit
200
0
25
50
75
100
125
150
V(BR)DSS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHNB7460SE
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 50V, starting TJ = 25C, L= 2.5 mH Peak IL = 20A, VGS = 12V ISD 20A, di/dt 120A/s, VDD 500V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 400 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions SMD-3
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. . Data and specifications subject to change without notice. 06/01
8
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