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| ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT August 2005 ISL9V5045S3S / ISL9V5045S3 EcoSPARKTM N-Channel Ignition IGBT 500mJ, 450V Features SCIS Energy = 500mJ at TJ = Logic Level Gate Drive 25oC General Description The ISL9V5045S3S and ISL9V5045S3 are next generation ignition IGBTs that offer outstanding SCIS capability in the industry standard D-Pak (TO-263) plastic package. This device is intended for use in automotive ignition circuits, specifically as a coil drivers. Internal diodes provide voltage clamping without the need for external components. EcoSPARKTM devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. Applications Automotive Ignition Coil Driver Circuits Coil - On Plug Applications Package EMMITER COLLECTOR GATE COLLECTOR (FLANGE) Symbol COLLECTOR GATE EMITTER R1 GATE R2 COLLECTOR (FLANGE) JEDEC TO-263AB D2-Pak JEDEC TO-262AA EMITTER 1 ISL9V5045S3S / ISL9V5045S3 Rev. A www.fairchildsemi.com ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT Device Maximum Ratings TA = 25C unless otherwise noted Symbol BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ TSTG TL Tpkg ESD Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) At Starting TJ = 25C, ISCIS = 39.2A, L = 650 Hy At Starting TJ = 150C, ISCIS = 31.1A, L = 650 Hy Collector Current Continuous, At TC = 25C, See Fig 9 Collector Current Continuous, At TC = 110C, See Fig 9 Gate to Emitter Voltage Continuous Power Dissipation Total TC = 25C Power Dissipation Derating TC > 25C Operating Junction Temperature Range Storage Junction Temperature Range Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) Max Lead Temp for Soldering (Package Body for 10s) Electrostatic Discharge Voltage at 100pF, 1500 Ratings 480 24 500 315 51 43 10 300 2 -40 to 175 -40 to 175 300 260 4 Units V V mJ mJ A A V W W/C C C C C kV Package Marking and Ordering Information Device Marking V5045S V5045S V5045S Device ISL9V5045S3ST ISL9V5045S3 ISL9V5045S3S Package TO-263AB TO-262AA TO-263AB Reel Size 330mm Tube Tube Tape Width 24mm N/A N/A Quantity 800 50 50 Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1K, See Fig. 15 TJ = -40 to 150C IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150C IC = -75mA, VGE = 0V, TC = 25C IGES = 2mA VCER = 320V, TC = 25C RG = 1K, See T = 150C C Fig. 11 VEC = 24V, See TC = 25C Fig. 11 TC = 150C 420 450 480 V BVCES Collector to Emitter Breakdown Voltage 445 475 505 V BVECS BVGES ICER Emitter to Collector Breakdown Voltage Gate to Emitter Breakdown Voltage Collector to Emitter Leakage Current 30 12 10K 14 100 - 25 1 1 40 30K V V A mA mA mA IECS R1 R2 Emitter to Collector Leakage Current Series Gate Resistance Gate to Emitter Resistance On State Characteristics VCE(SAT) VCE(SAT) Collector to Emitter Saturation Voltage Collector to Emitter Saturation Voltage IC = 10A, VGE = 4.0V IC = 15A, VGE = 4.5V TC = 25C, See Fig. 4 TC = 150C 1.25 1.47 1.60 1.80 V V 2 ISL9V5045S3S / ISL9V5045S3 Rev. A www.fairchildsemi.com ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT Dynamic Characteristics QG(ON) VGE(TH) Gate Charge Gate to Emitter Threshold Voltage IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 IC = 1.0mA, VCE = VGE, See Fig. 10 IC = 10A, TC = 25C TC = 150C VCE = 12V 1.3 0.75 32 3.0 2.2 1.8 nC V V V VGEP Gate to Emitter Plateau Voltage Switching Characteristics td(ON)R trR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 VCE = 300V, L = 2mH, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 TJ = 25C, L = 650 H, RG = 1K, VGE = 5V, See Fig. 1 & 2 0.7 2.1 10.8 2.8 4 7 15 15 500 s s s s mJ Thermal Characteristics Typical Characteristics 40 ISCIS, INDUCTIVE SWITCHING CURRENT (A) 35 30 25 20 15 TJ = 150C 10 5 SCIS Curves valid for Vclamp Voltages of <480V 0 0 25 50 75 100 125 150 175 200 tCLP, TIME IN CLAMP (S) TJ = 25C ISCIS, INDUCTIVE SWITCHING CURRENT (A) RG = 1K, VGE = 5V,Vdd = 14V 40 RG = 1K, VGE = 5V,Vdd = 14V 35 30 TJ = 25C 25 20 15 10 5 SCIS Curves valid for Vclamp Voltages of <480V 0 0 1 2 3 4 5 6 7 8 9 10 L, INDUCTANCE (mHy) TJ = 150C RJC Thermal Resistance Junction-Case TO-263, TO-262 - - 0.5 C/W Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp Figure 2. Self Clamped Inductive Switching Current vs Inductance 3 ISL9V5045S3S / ISL9V5045S3 Rev. A www.fairchildsemi.com ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT Typical Characteristics (Continued) 1.10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) ICE = 6A 1.05 VGE = 3.7V 1.00 VGE = 4.0V 1.25 ICE = 10A 1.20 VGE = 3.7V 1.15 VGE = 4.0V 0.95 VGE = 4.5V VGE = 5.0V 1.10 VGE = 4.5V VGE = 5.0V 1.05 VGE = 8.0V 0.90 VGE = 8.0V 0.85 -50 -25 0 25 50 75 100 125 150 175 1.00 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature Figure 4.Collector to Emitter On-State Voltage vs Junction Temperature 50 ICE, COLLECTOR TO EMITTER CURRENT (A) 50 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V 30 VGE = 3.7V VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V 30 VGE = 3.7V 20 20 10 TJ = - 40C 0 0 1.0 2.0 3.0 4.0 10 TJ = 25C 0 0 1.0 2.0 3.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs Collector to Emitter On-State Voltage 50 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 6. Collector Current vs Collector to Emitter On-State Voltage 50 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 8.0V VGE = 5.0V 40 VGE = 4.5V VGE = 4.0V 30 VGE = 3.7V DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250s 40 30 TJ = 175C 20 TJ = 25C 10 TJ = -40C 0 1.0 1.5 2.5 3.5 2.0 3.0 VGE, GATE TO EMITTER VOLTAGE (V) 4.0 4.5 20 10 TJ = 175C 0 0 1.0 2.0 3.0 4.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 7. Collector to Emitter On-State Voltage vs Collector Current Figure 8. Transfer Characteristics 4 ISL9V5045S3S / ISL9V5045S3 Rev. A www.fairchildsemi.com ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT Typical Characteristics (Continued) 55 50 ICE, DC COLLECTOR CURRENT (A) 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 175 0.8 -50 -25 0 25 50 75 100 125 150 175 VGE = 4.0V VTH, THRESHOLD VOLTAGE (V) 1.8 2.0 VCE = VGE ICE = 1mA 1.6 1.4 1.2 1.0 TC, CASE TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 9. DC Collector Current vs Case Temperature 10000 VECS = 24V 1000 LEAKAGE CURRENT (A) SWITCHING TIME (S) Figure 10. Threshold Voltage vs Junction Temperature 20 ICE = 6.5A, VGE = 5V, RG = 1K 18 16 14 Inductive tOFF 12 10 8 6 Resistive tON 4 Resistive tOFF 100 VCES = 300V 10 VCES = 250V 1 0.1 -50 -25 0 25 50 75 100 125 150 175 2 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 11. Leakage Current vs Junction Temperature 3000 FREQUENCY = 1 MHz 2500 C, CAPACITANCE (pF) VGE, GATE TO EMITTER VOLTAGE (V) 7 6 5 8 Figure 12. Switching Time vs Junction Temperature IG(REF) = 1mA, RL = 0.6, TJ = 25C 2000 CIES VCE = 12V 4 3 2 1 0 VCE = 6V 1500 1000 CRES 500 COES 0 0 5 10 15 20 25 0 10 20 30 40 50 VCE, COLLECTOR TO EMITTER VOLTAGE (V) QG, GATE CHARGE (nC) Figure 13. Capacitance vs Collector to Emitter Voltage Figure 14. Gate Charge 5 ISL9V5045S3S / ISL9V5045S3 Rev. A www.fairchildsemi.com ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT Typical Characteristics (Continued) 475 ICER = 10mA BVCER, BREAKDOWN VOLTAGE (V) 470 465 460 455 450 445 440 435 430 10 TJ = 25C TJ = 175C TJ = - 40C 100 RG, SERIES GATE RESISTANCE () 1000 5000 Figure 15. Breakdown Voltage vs Series Gate Resistance ZthJC, NORMALIZED THERMAL RESPONSE 100 0.5 0.2 0.1 10-1 0.05 0.02 t1 10-2 0.01 SINGLE PULSE PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-5 10-4 T1, RECTANGULAR PULSE DURATION (s) 10-3 10-2 10-3 -6 10 Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case Test Circuits and Waveforms L VCE R or L C RG = 1K 5V E E G + LOAD C RG DUT G PULSE GEN DUT VCE Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit 6 ISL9V5045S3S / ISL9V5045S3 Rev. A www.fairchildsemi.com ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT Test Circuits and Waveforms (Continued) VCE tP L IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP 0V RG - BVCES VCE VDD + VDD IAS 0.01 0 tAV Figure 19. Energy Test Circuit Figure 20. Energy Waveforms 7 ISL9V5045S3S / ISL9V5045S3 Rev. A www.fairchildsemi.com ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT SPICE Thermal Model REV 27 May 2005 ISL9V5045S3S / ISL9V5045S3 CTHERM1 th 6 82e-4 CTHERM2 6 5 105e-4 CTHERM3 5 4 12e-3 CTHERM4 4 3 33e-3 CTHERM5 3 2 55e-3 CTHERM6 2 tl 170e-3 RTHERM1 th 6 3e-3 RTHERM2 6 5 20e-3 RTHERM3 5 4 50e-3 RTHERM4 4 3 60e-3 RTHERM5 3 2 100e-3 RTHERM6 2 tl 127e-3 th JUNCTION RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 SABER Thermal Model SABER thermal model ISL9V5045S3S / ISL9V5045S3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 82e-4 ctherm.ctherm2 6 5 = 105e-4 ctherm.ctherm3 5 4 = 12e-3 ctherm.ctherm4 4 3 = 33e-3 ctherm.ctherm5 3 2 = 55e-3 ctherm.ctherm6 2 tl = 170e-3 rtherm.rtherm1 th 6 = 3e-3 rtherm.rtherm2 6 5 = 20e-3 rtherm.rtherm3 5 4 = 50e-3 rtherm.rtherm4 4 3 = 60e-3 rtherm.rtherm5 3 2 = 100e-3 rtherm.rtherm6 2 tl = 127e-3 } RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE 8 ISL9V5045S3S / ISL9V5045S3 Rev. A www.fairchildsemi.com ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 9 ISL9V5045S3S / ISL9V5045S3 Rev. A www.fairchildsemi.com |
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