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| IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE(sat) typ = 2.1 V C G G C TO-247 AD IXDH ... E IXDH 35N60 B IXDP 35N60 B E IXDH 35N60 BD1 G C E C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW Continuous Transient TC = 25C TC = 90C TC = 90C, tp =1 ms VGE = 15 V, TJ = 125C, RG = 10 W Clamped inductive load, L = 30 H VGE = 15 V, VCE = 600 V, TJ = 125C RG = 10 W, non repetitive TC = 25C IGBT Diode Maximum Ratings 600 600 20 30 60 35 70 ICM = 110 VCEK < VCES 10 250 80 -55 ... +150 -55 ... +150 300 0.4 - 0.6 0.8 - 1.2 6 V V V V A A A A s W W C C C Nm Nm g TO-220 AB IXDP ... G C E C (TAB) G = Gate, C = Collector , E = Emitter TAB = Collector Features q q q q q q q q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Symbol Conditions Mounting torque TO-220 TO-247 q NPT IGBT technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package Advantages q q Space savings High power density Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 3 TJ = 25C TJ = 125C 1 5 V V Typical Applications q q q V(BR)CES VGE(th) ICES IGES VCE(sat) VGE = 0 V IC = 0.7 mA, VCE = VGE q q VCE = VCES VCE = 0 V, VGE = 20 V IC = 35 A, VGE = 15 V 0.1 mA mA 500 nA AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies 2.2 2.7 V 021 (c) 2000 IXYS All rights reserved 1-4 IXDP 35N60 B IXDH 35N60 B IXDH 35N60 BD1 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1600 pF pF pF nC ns ns ns ns mJ mJ 0.5 K/W TO-247 AD Outline Cies Coes Cres Qg td(on) tr td(off) tf Eon Eoff RthJC RthCH RthCH TO 247 Package with heatsink compound TO 220 Package with heatsink compound Inductive load, TJ = 125C IC = 35 A, VGE = 15 V, VCE = 300 V, RG = 10 W IC = 35 A, VGE = 15 V, VCE = 480 V VCE = 25 V, VGE = 0 V, f = 1 MHz 150 90 120 30 45 320 70 1.6 0.8 Dim. 0.25 0.5 K/W K/W Reverse Diode (FRED) [D1 version only] Symbol VF IF IRM t rr trr RthJC Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.1 1.6 2.4 V V A A A ns ns 1.6 K/W IF = 35 A, VGE = 0 V IF = 35 A, VGE = 0 V, TJ = 125C TC = 25C TC = 90C IF = 15 A, -diF/dt = 400 A/s, VR = 300 V VGE = 0 V, TJ = 125C IF = 1 A, -diF/dt = 100 A/s, VR = 30 V, VGE = 0 V 45 25 13 90 40 Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 AEP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-220 AB Outline Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 (c) 2000 IXYS All rights reserved 2-4 IXDP 35N60 B IXDH 35N60 B IXDH 35N60 BD1 80 A 70 IC VGE= 17V 15V 13V 80 11V 9V A 70 IC 60 50 40 30 20 10 VGE= 17V 15V 13V 11V 9V 60 50 40 30 20 10 0 0 1 2 3 4 5 6 VCE TJ = 25C TJ = 125C 0 7V 0 1 2 3 4 5 VCE 6 7V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 80 A 70 IC 80 70 A IF 60 50 40 30 TJ = 125C TJ = 25C 60 50 40 30 20 TJ = 125C TJ = 25C VCE = 20V 20 10 0 10 0 3 4 5 6 7 VGE 8 9 V 10 0 1 2 VF V 3 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 30 trr 15 V 120 ns trr 12 VGE 25 A IRM 20 9 15 6 10 3 0 0 20 40 60 80 100 120 nC QG VCE = 480V IC = 30A IRM 80 40 TJ = 125C VR = 300V IF = 15A IXDx35N60B 5 0 0 200 400 0 600 800 A/ms -di/dt 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 3-4 IXDP 35N60 B IXDH 35N60 B IXDH 35N60 BD1 400 td(off) ns 300 t Eoff 4 mJ Eon VCE = 300V VGE = 15V RG = 10W TJ = 125C 80 td(on) ns 60 t Eon 40 Eoff 2.0 mJ 3 1.5 2 1.0 VCE = 300V VGE = 15V 200 tr 1 20 0.5 tf RG = 10W TJ = 125C 100 0 10 0 20 30 40 IC 50 60 A 0.0 10 0 20 30 40 50 IC 60 A Fig. 7 Typ. turn on energy and switching times versus collector current 2.0 mJ Eon 1.5 td(on) Eon tr 30 VCE = 300V VGE = 15V IC = 35A TJ = 125C Fig. 8 Typ. turn off energy and switching times versus collector current 2.0 mJ t Eoff 1.5 VCE = 300V VGE = 15V IC = 35A TJ = 125C 60 ns 45 800 td(off) ns 600 Eoff t 1.0 1.0 400 0.5 15 0.5 tf 200 0.0 0 5 10 15 20 25 30 RG 35 W 40 0 0.0 0 5 10 15 20 25 30 RG 35 W 40 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 A 100 ICM Fig.10 Typ. turn off energy and switching times versus gate resistor 1 K/W ZthJC 0.1 diode IGBT 80 60 40 20 0 0 100 200 300 400 500 600 VCE RG = 10 W TJ = 125C 0.01 single pulse 700 V 0.001 10-5 IXDH30N60B 10-4 10-3 10-2 10-1 t 100 s 101 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 4-4 |
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