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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07
ID25
RDS(on) 6 mW 7 mW 6 mW
60 V 110 A 70 V 105 A 70 V 110 A trr 250 ns
Symbol VDSS VDGR VGS VGSM ID25 ID130 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C, die capability TC = 130C, limited by external leads TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C N07 N06 N07 N06
Maximum Ratings 70 60 70 60 20 30 110 76 600 100 30 2 5 500 -55 ... +150 150 -55 ... +150 V V V V V V A A A A mJ J V/ns W C C C C Nm/lb.in. Nm/lb.in. g
TO-264 AA (IXFK)
G D S
(TAB)
Features * International standard packages * JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount * Space savings * High power density
92802I (10/97)
1.6 mm (0.063 in) from case for 10 s Mounting torque Terminal connection torque
300 0.9/6 10
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. N06 N07 60 70 2 V V V nA mA mA
* * * *
VDSS VGS (th) IGSS IDSS RDS(on)
VGS VDS VGS VDS VGS
= 0 V, ID = 1 mA = VGS, ID = 8 mA = 20 VDC, VDS = 0 = 0.8 * VDSS =0V
4 200
TJ = 25C TJ = 125C 110N06/110N07 105N07
400 2
VGS = 10 V, ID = 0.5 * ID25 Note 2
6 mW 7 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
1-4
IXFK 110N06 IXFK 105N07 IXFK 110N07
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 60 80 9000 VGS = 0 V, VDS = 25 V, f = 1 MHz 4000 2400 30 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), 60 100 60 480 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 60 240 TO-264 AA TO-264 AA 0.15 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 AA Outline
gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, Note 2
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = 25 A -di/dt = 100 A/ms, VR = 50 V Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 110N06/110N07 105N07 110 105 440 420 1.7 150 250 0.7 9 A A A A V ns mC A
VGS = 0 V
Repetitive; pulse width limited by TJM 110N06/110N07 105N07 IF = 100 A, VGS = 0 V, Note 2
Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 ms, duty cycle d 2 %
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXFK 110N06 IXFK 105N07 IXFK 110N07
175 150 600
VGS=10V 9V 8V 7V 6V TJ=25OC
TJ = 25OC
500
VGS=10V 9V 8V
ID - Amperes
125 100 75 50 25 0 0.0
ID - Amperes
400
7V
5V
300 200 100 0
6V
5V
0.5
1.0
1.5
2.0
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VDS - Volts
Figure 1. Output Characteristics at 25OC
600
VDS > 4RDS(ON)
Figure 2. Extended Output Characteristics
80
Transconductance - Siemens
500
TJ=150OC
70 60 50 40 30 20 10 0 0
VGS=10V
TJ = 25oC
ID - Amperes
400
TJ=25OC
TJ = 100oC
300 200 100 0 2 4 6
TJ=100OC
TJ = 150oC
8
10
12
100
200
300
400
500
600
VGS - Volts
IC - Amperes
Figure 3. Admittance Curves
1.4
TJ = 25oC
Figure 4. Transconductance vs. Drain Current
2.25 2.00
ID = 75A VGS = 10V
RDS(ON) - Normalized
1.3
RDS(ON) - Normalized
500 600
1.2 1.1 1.0 0.9 0.8 0 100 200 300 400
VGS = 10V VGS = 15V
1.75 1.50 1.25 1.00 0.75 0.50 -50 -25 0 25 50 75 100 125 150 175
ID - Amperes
TJ - Degrees C
Figure 5. RDS(on) normalized to 0.5 ID25 value
Figure 6. Normalized RDS(on) vs. Junction Temperature 3-4
(c) 2000 IXYS All rights reserved
IXFK 110N06 IXFK 105N07 IXFK 110N07
16 14 12
VDS = 40V ID = 38A IG = 1mA
125
IXFK110
100
IXFK105 ID - Amperes
300 400 500 600 700 75 50 25
VGS - Volts
10 8 6 4 2 0 0 100 200
0 -50
-25
0
25
50
75
100 125 150
Gate Charge - nCoulombs
Case Temperature - OC
Figure 7. Gate Charge
12000
F = 1MHz
Figure 8. Drain Current vs. Case Temperature
400
TJ =150OC
10000
p
8000 6000
Coss
ID - Amperes
Ciss
300
200
TJ =25OC TJ =150OC
p
4000 2000 0 0 10 20 30 40
Crss
100
TJ =100OC
0 0.0
0.5
1.0
1.5
2.0
VDS - Volts
VSD - Volts
Figure 9. Capacitance Curves
100 Thermal Response - K/W
Figure 10. Source-Drain Voltage vs. Source Current
10-1
10-2 10-3
10-2 Time - Seconds
10-1
100
Figure 11. Transient Thermal Resistance
(c) 2000 IXYS All rights reserved
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