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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID (cont) = 7 A RDS(on) = 1.4 W trr = 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Maximum Ratings 800 800 20 30 7 28 7 18 5 180 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns TO-247 AD (IXFH) (TAB) TO-204 AA (IXFM) D G W C C C C Nm/lb.in. G = Gate, S = Source, D = Drain, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 TO-204 = 18 g, TO-247 = 6 g Features * International standard packages * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic Rectifier Applications * DC-DC converters * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) * Space savings * High power density 91527F(7/97) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 2 4.5 100 TJ = 25C TJ = 125C 250 1 1.4 V V nA mA mA W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 2.5 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-4 IXFH 7N80 IXFM 7N80 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4 6 2800 VGS = 0 V, VDS = 25 V, f = 1 MHz 250 100 35 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 4.7 W (External) 40 100 60 110 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 15 50 100 110 200 100 130 30 70 0.7 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXFH) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = IS -di/dt = 100 A/ms, VR = 100 V Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 7 28 1.5 250 400 0.5 1.0 7.5 9.0 A A J K L M N 1.5 2.49 Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C TO-204 AA (IXFM) Outline V ns ns mC mC A A Dim. A B C D E F G H J K Q R Millimeter Min. Max. 38.61 39.12 19.43 19.94 6.40 9.14 0.97 1.09 1.53 2.92 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 25.90 Inches Min. Max. 1.520 1.540 - 0.785 0.252 0.360 0.038 0.043 0.060 0.115 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.020 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 7N80 IXFM 7N80 Fig. 1 Output Characteristics Fig. 2 Input Admittance 9 8 7 TJ = 25C VGS = 10V 6V 9 8 7 TJ = 25C ID - Amperes ID - Amperes 5V 6 5 4 3 2 1 0 6 5 4 3 2 1 0 5 10 15 20 25 30 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 3.0 TJ = 25C Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 2.8 RDS(on) - Normalized RDS(on) - Ohms 2.00 1.75 1.50 1.25 1.00 0.75 ID = 3.5A 2.6 2.4 VGS= 10V 2.2 VGS= 15V 2.0 1.8 0 2 4 6 8 10 0.50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 8 7 6 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 1.1 VGS(th) BVDSS BV/VG(th) - Normalized ID - Amperes 5 4 3 2 1 0 -50 7N80 1.0 0.9 0.8 0.7 0.6 -25 0 25 50 75 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C (c) 2000 IXYS All rights reserved 3-4 IXFH 7N80 IXFM 7N80 Fig.7 Gate Charge Characteristic Curve 10 9 8 7 VDS = 500V ID = 3.5A IG = 10mA Fig.8 Forward Bias Safe Operating Area 10s 10 Limited by RDS(on) 100s 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 ID - Amperes VGE - Volts 1ms 1 10ms 100ms 0.1 1 10 100 1000 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 2750 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 0 5 Ciss Fig.10 Source Current vs. Source to Drain Voltage 9 8 7 Capacitance - pF f = 1MHz VDS = 25V ID - Amperes 6 5 4 3 2 1 TJ = 25C TJ = 125C Coss Crss 10 15 20 25 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VCE - Volts VDS - Volts Fig.11 Transient Thermal Impedance 1 Thermal Response - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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