 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HiPerFETTM Power MOSFETs Single DieMOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet IXFN 34N80 D VDSS = 800 V ID25 = 34 A RDS(on) = 0.24 W trr 250 ns S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Maximum Ratings 800 800 20 30 34 136 34 64 3 5 600 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C V~ V~ miniBLOC, SOT-227 B E153432 S G S D G = Gate S = Source D = Drain Either Source terminal of miniBLOC can be used as Main or Kelvin Source Features * International standard packages * miniBLOC, with Aluminium nitride 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 300 2500 3000 isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g rated * Low package inductance * Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 0.096 3.0 -0.214 200 TJ = 25C TJ = 125C 100 2 0.24 5.0 V %/K V %/K nA mA mA W Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDSS temperature coefficient VDS = VGS, ID = 8 mA VGS(th) temperature coefficient VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 % power supplies * DC choppers * Temperature and lighting controls Advantages * Easy to mount * Space savings * High power density IXYS reserves the right to change limits, test conditions, and dimensions. 98529D (6/99) (c) 2000 IXYS All rights reserved 1-4 IXFN 34N80 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 35 7500 VGS = 0 V, VDS = 25 V, f = 1 MHz 920 220 45 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External) 45 100 40 270 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 60 140 0.22 0.15 0.21 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 miniBLOC, SOT-227 B gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test Source-Drain Diode Symbol IS ISM VSD trr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 34 136 A A IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 100 A/ms, VR = 100 V T J = 25C TJ = 125C T J = 25C 1.5 250 400 1.4 10 V ns ns mC A QRM IRM (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFN 34N80 40 TJ = 25OC 40 VGS = 9V 8V 7V 6V 5V TJ = 125OC 32 32 ID - Amperes ID - Amperes VGS = 9V 8V 7V 6V 5V 24 16 8 0 4V 24 16 8 0 4V 0 2 4 6 8 10 0 4 8 12 16 20 VDS - Volts VDS - Volts Figure 1. Output Characteristics at 25OC 2.4 2.2 VGS = 10V Figure 2. Output Characteristics at 125OC 2.2 2.0 1.8 1.6 1.4 1.2 1.0 25 ID = 34A ID =17A VGS = 10V RDS(ON) - Normalized 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 TJ = 125OC TJ = 25OC 20 30 40 50 RDS(ON) - Normalized 50 75 100 125 150 ID - Amperes T J - Degrees C Figure 3. 40 32 RDS(on) normalized to 0.5 ID25 value vs. ID 40 32 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ ID - Amperes 24 16 8 0 ID - Amperes 24 TJ = 125oC 16 8 0 2.5 TJ = 25oC -50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 5.0 5.5 T C - Degrees C VGS - Volts Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves (c) 2000 IXYS All rights reserved 3-4 IXFN 34N80 12 10 V DS = 400V ID = 17A IG = 10mA 10000 C ISS Capacitance - pF VGS - Volts 8 6 4 2 0 f = 1MHz C OSS 1000 C RSS 0 50 100 150 200 250 300 350 400 100 0 5 10 15 20 25 30 35 40 Gate Charge - nC V DS - Volts Figure 7. Gate Charge 80 100 60 Figure 8. Capacitance Curves ID - Amperes 0. ID - Amperes 10 1 T = 25 OC T JJ = 25 OC 10 40 TJ = 125 OC 20 TJ = 25OC 1 D 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 10 1 00 1 000 V SD - Volts V DS - Volts Figure 8. Forward Voltage Drop of the Intrinsic Diode 1.000 R(th)JC - K/W 0.100 0.010 Single Pulse 0.001 10 -4 10 -3 10 -2 10 -1 10 0 Pulse Width - Seconds Figure 9. Transient Thermal Resistance (c) 2000 IXYS All rights reserved 4-4 |
Price & Availability of IXFN34N80
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |