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HiPerFETTM Power MOSFETs Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C, Chip capability TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C
IXFN 44N80
VDSS ID25
RDS(on)
= 800 V = 44 A = 0.165 W
D
G S
S
Maximum Ratings 800 800 20 30 44 176 44 64 4 5 700 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A mJ J V/ns W C C C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D
G = Gate S = Source
D = Drain TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features International standard packages isolation
miniBLOC, with Aluminium nitride Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low package inductance Fast intrinsic Rectifier
Applications DC-DC converters rated
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 2.0 4.0 200 TJ = 25C TJ = 125C 100 2 0.165 V V nA mA mA W

Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls
VDSS VGH(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3 mA V DS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V V GS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 %
Advantages Easy to mount

Space savings High power density
98594B (02/01)
(c) 2001 IXYS All rights reserved
IXFN 44N80
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 32 50 10000 VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 330 35 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 W (External), 48 100 24 380 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 70 170 0.18 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 15 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 44 176 1.3 250 A A V ns mC A
I F = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % I F = 25A, -di/dt = 100 A/ms, VR = 100 V 1.2 8
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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