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| Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS(on) = 900 V = 7A = 1.5 W trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Maximum Ratings 900 900 20 30 7 28 7 20 700 5 180 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W C C C C Nm/lb.in. g g TO-247 AD (IXFH) TO-268 (D3) ( IXFT) G S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 300 1.13/10 6 4 Features * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive - faster switching * International standard packages * Low RDS (on) * Unclamped Inductive Switching (UIS) rated * Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 900 3.0 5.0 100 TJ = 25C TJ = 125C 50 1 1.5 V V nA mA mA W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 2.5 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V Advantages * Easy to mount * Space savings * High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. 98645 (8/99) (c) 2000 IXYS All rights reserved 1-2 IXFH 7N90Q IXFT 7N90Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3 6 2200 VGS = 0 V, VDS = 25 V, f = 1 MHz 210 35 15 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 4.7 W (External), 15 42 13 56 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 18 24 0.7 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXFH) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 7 28 1.5 A A V J K L M N 1.5 2.49 Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 100 A/ms, VR = 100 V 0.75 5.5 250 ns mC A TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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