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HiPerFASTTM IGBT
IXGH40N30BD1
VCES IC25 VCE(sat) tfi
= 300 V = 60 A = 2.4 V = 75 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25C
Maximum Ratings 300 300 20 30 60 40 160 ICM = 80 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C
TO-247 AD
G
C
C (TAB) E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features * International standard package JEDEC TO-247 AD * High current IGBT and paralled FRED in one package * Low leakage current FRED * Newest generation HDMOSTM process * MOS Gate turn-on - drive simplicity Applications * * * * * AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3)
1.13/10 Nm/lb.in.
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2.5 TJ = 25C TJ = 125C V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE
Advantages * High power density (two devices in one package) * Switching speed for high frequency applications * Easy to mount with 1 screw, (isolated mounting screw hole)
5 200 1 100 2.4
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
97508C (6/98)
(c) 2000 IXYS All rights reserved
1-4
IXGH40N30BD1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 28 2500 VCE = 25 V, VGE = 0 V, f = 1 MHz 210 60 145 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 23 50 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 1.0 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 1.0 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 25 45 75 75 0.3 25 45 0.5 90 130 0.6 180 230 1.4 170 35 75 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXGH) Outline
gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 %
1.5 2.49
0.62 K/W 0.25 K/W
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.8 1.5 30 1.8 V A ns 1 K/W
IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V; TJ =100C IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25C
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXGH40N30BD1
100
TJ = 25C
200
VGE = 15V 13V 11V
9V TJ = 25C VGE = 15V
13V
11V
80
160
IC - Amperes
IC - Amperes
60
7V
120 80
9V
40 20
5V
7V
40
5V
0 0 1 2 3 4 5
0
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
100
TJ = 125C
VCE (sat) - Normalized
80
VGE = 15V 13V 11V
9V
1.6
VGE = 15V IC = 80A
1.4 1.2 1.0
IC = 20A IC = 40A
IC - Amperes
60 40 20 0 0 1 2 3 4
7V
0.8 0.6 0.4
5V
5
25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 3. High Temperature Output Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
100
VCE = 10V
10000
f = 1Mhz
80 Capacitance - pF
IC - Amperes
1000
Ciss
60 40 20 0 2 3 4 5 6 7 8 9 10
TJ = 125C TJ = 25C
100
Coss
Crss
10 0 5 10 15 20 25 30 35 40
VGE - Volts
VCE-Volts
Fig. 5. Admittance Curves
Fig. 6. Capacitance Curves)
(c) 2000 IXYS All rights reserved
3-4
IXGH40N30BD1
1.25
TJ = 125C
2.5
RG = 4.7
E(ON)
1.50
TJ = 125C IC = 80A
3.0 2.5
1.00
E(ON) - millijoules
2.0 1.5
E(OFF)
1.25
E(ON)
E(ON) - millijoules
E(OFF) - milliJoules
E(OFF) - millijoules
E(OFF)
1.00 0.75
E(ON)
2.0 1.5 1.0 0.5
E(OFF)
0.75 0.50 0.25 0.00
0 20 40 60
1.0 0.5 0.0 80
0.50 0.25 0.00
E(ON)
IC = 40A IC = 20A
E(OFF)
0.0
0
10
20
30
40
50
60
IC - Amperes
RG - Ohms
Fig. 7. Dependence of EON and EOFF on IC.
18 15
IC = 40A VCE = 150V
Fig. 8. Dependence of EON and EOFF on RG.
100
IC - Amperes
VGE - Volts
12 9 6 3 0 0 25 50 75 100 125 150 175
10
TJ = -55 to +125C
RG = 4.7
1
dV/dt < 5V/ns
0.1 0 50 100 150 200 250 300
Qg - nanocoulombs
VCE - Volts
Fig. 9. Gate Charge
1
Fig. 10. Turn-off Safe Operating Area
D=0.5
ZthJC (K/W)
0.1
D=0.2 D=0.1 D=0.05 D=0.02
0.01
D=0.01
Single pulse
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
(c) 2000 IXYS All rights reserved
4-4

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