![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
HiPerFASTTM IGBT IXGH 15N120B VCES = 1200 V = 30 A IXGT 15N120B IC25 VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load TC = 25C Maximum Ratings 1200 1200 20 30 30 15 60 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E W C C C C C Features G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD Low switching losses, low V(sat) MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25C TJ = 125C 5 100 3.5 100 3.2 TJ = 125C 2.5 V V A mA nA V V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 A, VGE = 0 V = 250 A, VCE = VGE AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V (c) 2002 IXYS All rights reserved 98659-A (7-02) IXGH 15N120B IXGT 15N120B Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 15 1720 VCE = 25 V, VGE = 0 V, f = 1 MHz 95 35 69 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 13 26 25 15 180 160 1.75 25 18 0.60 300 360 3.5 280 320 S P TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % pF pF pF nC nC nC ns ns ns ns e Dim. 3.0 mJ ns ns mJ ns ns mJ 0.83 K/W Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline (TO-247) 0.25 K/W Dim. Min Recommended Footprint A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH 15N120B IXGT 15N120B 50 TJ = 25OC 150 125 9V TJ = 25oC VGE = 15V 40 IC - Amperes 30 20 10 IC - Amperes VGS = 15V 13V 11V 100 75 50 25 13V 11V 9V 7V 7V 5V 5V 0 0 2 4 6 8 10 0 0 5 10 15 VCE - Volts VCE - Volts Fig. 1. Saturation Voltage Characteristics @ 25oC 50 TJ = 125OC VGS = 15V 13V 11V Fig. 2. Extended Output Characteristics 1.6 VGE = 15V VCE (SAT) - Normalized 40 1.4 1.2 IC = 30A IC - Amperes 30 20 10 9V IC = 15A 7V 1.0 IC = 7.5A 0.8 0.6 0.4 5V 0 0 2 4 6 8 10 -25 0 25 50 75 100 125 150 VCE - Volts TJ - Degrees C Fig. 3. Saturation Voltage Characteristics @ 125oC 60 55 50 45 40 35 30 25 20 15 10 5 0 Fig. 4. Temperature Dependence of VCE(sat) 10000 TJ = 125 C o Capacitance - pF TJ = -40oC IC - Amperes 1000 100 TJ = 25 C o 4 5 6 7 8 9 10 10 0 5 10 15 20 25 30 35 40 VGE - Volts IXG_15N120B-P1 VCE - Volts Fig. 5. Admittance Curves Fig. 6. Capacitance Curves (c) 2002 IXYS All rights reserved IXGH 15N120B IXGT 15N120B 8 7 E(OFF) - millijoules TJ = 125C 8 RG = 10 7 TJ = 125C IC = 30A E(OFF) E(OFF) - millijoules 6 5 4 3 2 1 0 5 10 15 20 25 30 35 E(OFF) 6 5 4 3 2 1 0 IC = 15A E(OFF) IC = 7.5A E(OFF) 0 10 20 30 40 50 60 IC - Amperes RG - Ohms Fig. 7. Dependence of tfi and EOFF on IC. 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 IC = 15A VCE = 600V Fig. 8. Dependence of tfi and EOFF on RG. 100 30 IC - Amperes VGE - Volts 10 TJ = -55 to +125C RG = 10 dV/dt < 5V/ns 1 0.1 0 200 400 600 800 1000 1200 Qg - nanocoulombs VCE - Volts Fig. 9. Gate Charge 1 D=0.5 D=0.2 Fig. 10. Turn-off Safe Operating Area ZthJC (K/W) 0.1 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 0.01 D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance IXGH15N120B-P2 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
Price & Availability of IXGT15N120B
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |