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| High Voltage, High speed IGBT Short Circuit SOA Capability VCES IXSH 35N140A 1400 V IC25 70 A VCE(sat) 4V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 22 Clamped inductive load VGE = 15 V, VCE = 840 V, TJ = 125C RG = 22 W, non repetitive TC = 25C Maximum Ratings 1400 1400 20 30 70 35 140 ICM = 70 @ 960 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A V s W C C C TO-247 AD G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features * International standard package JEDEC TO-247 * High frequency IGBT with guaranteed Short Circuit SOA capability * Fast Fall Time for switching speeds up to 20 kHz Mounting torque 1.13/10 Nm/lb.in. 6 300 g C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s * 2nd generation HDMOS * Low V CE(sat) TM process - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4.5 TJ = 25C TJ = 125C 6.5 50 2 100 3.4 4 V A mA nA V VGE(th) ICES IGES VCE(sat) IC = 4 mA, VCE = VGE * * * * * * * AC motor speed control DC servo and robot drive Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Welding VCE = 1400 V VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Advantages Easy to mount with 1 screw (isolated mounting screw hole) High power density (c) 2003 IXYS All rights reserved DS92716I(06/03) IXSH 35N140A Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 23 3000 VCE = 25 V, VGE = 0 V, f = 1 MHz 235 60 120 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 32 50 40 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 960 V, RG = 3.0 60 150 200 4.0 40 65 Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 960 V, RG = 3.0 4 240 400 9.5 300 450 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.42 K/W 0.25 K/W 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXSH 35N140A Fig. 1. Output Characteristics @ 25 Deg. C 70 60 50 VGE = 17V 15V 13V 180 160 11V 140 Fig. 2. Extended Output Characteristics @ 25 deg. C VGE = 17V 15V 1 3V I C - Amperes 40 9V 30 20 10 0 1 2 3 4 5 6 7 7V I C - Amperes 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 9V 7V 11V V CE - Volts Fig. 3. Output Characteristics @ 125 Deg. C 70 60 50 VGE = 17V 15V 13V 11V 1.5 1.4 VGE = 15V V CE - Volts Fig. 4. Tem perature Dependence of V CE(sat) I C = 70A VC E (sat) - Normalized 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 I C = 17.5A I C = 35A I C - Amperes 40 30 20 10 0 1 2 3 4 5 6 9V 7V 7 -50 -25 0 25 50 75 100 125 150 V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em iiter voltage 10 9 8 T J = 25C 100 120 TJ - Degrees Centigrade Fig. 6. Input Adm ittance VCE - Volts 7 6 5 4 3 17.5A 2 8 9 10 11 12 13 14 15 16 17 35A I C = 70A I C - Amperes 80 60 40 20 0 5 6 7 8 9 10 11 12 TJ = 125C 25C -40C V GE - Volts (c) 2003 IXYS All rights reserved V GE - Volts IXSH 35N140A Fig. 7. Transconductance 35 30 25 TJ = -40C 25C 125C 18 16 14 12 10 8 6 4 0 20 40 60 80 100 120 0 Fig. 8. Dependence of Eoff on RG I C = 70A TJ = 125C VGE = 15V VCE = 960V 20 15 10 5 0 E off - milliJoules g fs - Siemens I C = 35A I C = 17.5A 5 10 15 20 25 30 I C - Amperes R G - Ohms Fig. 10. Dependence of Eoff on Tem perature 20 18 16 RG = 3 R G = 30 - - - - - VGE = 15V VCE = 960V I C = 70A Fig. 9. Dependence of Eoff on Ic 18 16 14 RG = 3 R G = 30 - - - - - VGE = 15V VCE = 960V E off - milliJoules 12 10 8 6 4 2 0 10 20 30 40 50 60 70 TJ = 25C TJ = 1 25C E off - milliJoules 14 12 10 8 6 4 2 0 25 I C = 35A I C = 17.5A 50 75 100 125 I C - Amperes TJ - Degrees Centigrade Fig. 11. Gate Charge 15 VCE = 700V I C = 35A I G = 10mA 10000 Fig. 12. Capacitance f = 1MHz 12 Capacitance - pF 1000 C ies VGE - Volts 9 6 100 C oes 3 C res 10 0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 40 0 Q G - nanoCoulombs IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: V CE - Volts 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXSH 35N140A Fig. 1 3 . M a x im um Tr a ns ie nt The rm a l Re s is ta nc e 1 R (th)JC - (C/W) 0.1 0.01 1 10 100 1000 Puls e W idth - millis ec onds (c) 2003 IXYS All rights reserved |
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