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PolarHTTM Power MOSFET
N-Channel Enhancement Mode
IXTH 96N20P IXTQ 96N20P IXTT 96N20P
VDSS ID25
RDS(on)
= 200 V = 96 A = 24 m
TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-247 TO-268 (TO-3P, TO-247) TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Maximum Ratings 200 200 20 96 75 225 60 50 1.5 10 600 -55 ... +175 175 -55 ... +150 300 V V V A A A A mJ J V/ns W C C C C TO-268 (IXTT) G D S
(TAB) G D S (TAB)
TO-3P (IXTQ)
1.13/10 Nm/lb.in. 5.5 6.0 5.0 g g g
G = Gate S = Source
G
S D = Drain TAB = Drain
D (TAB)
Features Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150C Characteristic Values Min. Typ. Max. 200 2.5 5.0 100 25 250 24 V V nA A A m Advantages Easy to mount Space savings High power density
DS99117D(01/05)
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2005 IXYS All rights reserved
IXTH 96N20P IXTQ 96N20P IXTT 96N20P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 40 52 4800 VGS = 0 V, VDS = 25 V, f = 1 MHz 1020 270 28 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 4 (External) 30 75 30 145 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 80 S pF pF pF ns ns ns ns nC nC nC 0.25 K/W (TO-3P, TO-247) 0.21 K/W TO-3P (IXTQ) Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 96 240 1.5 160 3.0 A A V ns C TO-268 Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V
TO-247 AD Outline
Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
1
2
3
Terminals: 1 - Gate 3 - Source
2 - Drain Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2
IXTH 96N20P IXTQ 96N20P IXTT 96N20P
Fig. 1. Output Characteristics @ 25C
100 90 80 70 VGS = 10V 9V 250 225 200 175 9V VGS = 10V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 6V 7V 8V
I D - Amperes
150 125 100 75 50 25 0 0 2 4 6 7V 6V 8 10 12 14 16 18 20 8V
V D S - Volts Fig. 3. Output Characteristics @ 150C
100 90 80 VGS = 10V 9V 3 2.8 2.6 VGS = 10V
V D S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature
R D S ( o n ) - Normalized
I D - Amperes
70 60 50 40 30 20 10 0 0 1 2
2.4 2.2 2 1.8 1.6 1.4 1.2 1 I D = 96A I D = 48A
8V
7V
6V
5V 3 4 5 6 7
0.8 0.6 -50 -25 0 25 50 75 100 125 150 175
V D S - Volts
TJ - Degrees Centigrade Fig. 6. Drain Curre nt vs . Cas e Tem pe rature
Fig. 5. RDS(on) Norm alize d to
4.3 4 3.7
0.5 ID25 Value vs. ID
VGS = 10V TJ = 175C
100 90 80 70
R D S ( o n ) - Normalized
3.4 3.1 2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0 25
I D - Amperes
60 50 40 30 20
TJ = 125C
TJ = 25C 50 75 100 125 150 175 200 225 250
10 0
I D - Amperes
-50
-25
0
TC - Degrees Centigrade
25
50
75
100
125
150
175
(c) 2005 IXYS All rights reserved
IXTH 96N20P IXTQ 96N20P IXTT 96N20P
Fig. 7. Input Adm ittance
160 140 120 100 80 60 40 20 0 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 TJ = 150C 25C -40C 80 70 60 TJ = -40C 25C 150C
Fig. 8. Transconductance
g f s - Siemens
I D - Amperes
50 40 30 20 10 0 0 25 50 75 100 125 150 175 200
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
300 10 9 250 8 7 VDS = 100V I D = 48A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
200
VG S - Volts
TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6
6 5 4 3 2 1 0
150 100
50
0
V S D - Volts
0
15
30
Q G - nanoCoulombs
45
60
75
90
105 120 135 150
Fig. 11. Capacitance
10000 f = 1MHz 1000
Fig. 12. Forw ard-Bias Safe Operating Area
R DS(on) Limit TJ = 175C TC = 25C 25s 100s 1ms 10ms 10 DC
Capacitance - picoFarads
C iss
I D - Amperes
35 40
100
1000 C oss
C rss 100 0 5 10 15 1 20 25 30
V DS - Volts
10
V D S - Volts
100
1000
IXTH 96N20P IXTQ 96N20P IXTT 96N20P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
1.00
R( t h ) J C - C / W
0.10
0.01 1 10 100 1000
Pu ls e W id th - m illis e c o n d s
(c) 2005 IXYS All rights reserved

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