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PD-90884D
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
Product Summary
Part Number IRHN7054 IRHN3054 IRHN4054 IRHN8054 Radiation Level 100K Rads (Si) 300K Rads (Si) 500K Rads (Si) 1000K Rads (Si)
IRHN7054 JANSR2N7394U 60V, N-CHANNEL REF: MIL-PRF-19500/603
RAD-Hard HEXFET TECHNOLOGY
TM (R)
RDS(on) ID QPL Part Number 0.027 35A JANSR2N7394U 0.027 35A JANSF2N7394U 0.027 35A JANSG2N7394U 0.040 35A JANSH2N7394U
SMD-1
International Rectifier's RAD-Hard TM HEXFET (R) technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Surface Mount
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C Continuous Drain Current ID @ VGS = 12V, TC = 100C Continuous Drain Current IDM Pulsed Drain Current A PD @ T C = 25C VGS EAS IAR EAR dv/dt TJ T STG Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight For footnotes refer to the last page 35 30 283 150 1.2 20 500 35 15 3.5 -55 to 150 300 (5sec) 2.6 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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1
05/15/06
IRHN7054, JANSR2N7394U
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
60 -- -- -- 2.0 12 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.053 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.027 0.030 4.0 -- 25 250 100 -100 200 60 75 27 100 75 75 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 30A A VGS = 12V, ID = 35A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 30A A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 30V VDD =30V, ID = 35A VGS =12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
4100 2000 560
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 35 283 1.4 280 2.2
Test Conditions
A
V ns C Tj = 25C, IS = 35A, VGS = 0V A Tj = 25C, IF = 35A, di/dt 100A/s VDD 50V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max Units
-- -- -- 6.6
Test Conditions
0.83 -- C/W Soldered to a 1 inch square clad PC board
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHN7054, JANSR2N7394U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (SMD-1) Diode Forward Voltage A
Up to 500K Rads(Si)1
1000K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = V DS, ID = 1.0mA V GS = 20V VGS = -20 V VDS=48V, V GS =0V VGS = 12V, I D =30A VGS = 12V, I D =30A VGS = 0V, IS = 35A
Min 60 2.0 -- -- -- -- -- --
Max -- 4.0 100 -100 25 0.027 0.027 1.4
Min 60 1.25 -- -- -- -- -- --
Max -- 4.5 100 -100 50 0.04 0.04 1.4
1. Part numbers IRHN7054 (JANSR2N7394U) ,IRHN3054 (JANSF2N7394U) and IRHN4054 (JANSG2N7394U) 2. Part number IRHN8054 ( JANSH2N7394U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I LET (MeV/(mg/cm2)) 36.8 59.9 Energy (MeV) 305 345
70 60 50 VDS 40 30 20 10 0 0 -5 -10 VGS -15 -20 BR I
Range VDS (V) (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V 39 60 60 45 40 32.8 40 35 30 25
@VGS=-20V 30 20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHN7054, JANSR2N7394U
Pre-Irradiation
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
5.0V
10 1 10
20s PULSE WIDTH TJ = 25 C
100
5.0V
10 1 10
20s PULSE WIDTH TJ = 150 C
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 50A
I D , Drain-to-Source Current (A)
2.0
TJ = 25 C
100
1.5
TJ = 150 C
1.0
0.5
10 5 6 7 8
V DS = 25V 20s PULSE WIDTH 9 10 11 12
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHN7054, JANSR2N7394U
8000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 35A VDS = 48V VDS = 30V
16
C, Capacitance (pF)
6000
Ciss
4000
12
Coss
2000
8
4
Crss
0 1 10 100
0 0 40 80
FOR TEST CIRCUIT SEE FIGURE 13
120 160 200
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
ID , Drain Current (A)
TJ = 25 C TJ = 150 C
100
100
100us
1ms
10
10
10ms
1 0.4
V GS = 0 V
1.0 1.6 2.2 2.8 3.4 4.0
1 1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHN7054, JANSR2N7394U
Pre-Irradiation
50
LIMITED BY PACKAGE
40
VDS V GS RG
RD
D.U.T.
+
ID , Drain Current (A)
- VDD
30
VGS
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0
25
50
75
100
125
150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1 0.50
Thermal Response (Z thJC )
0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHN7054, JANSR2N7394U
1200
EAS , Single Pulse Avalanche Energy (mJ)
TOP BOTTOM
15V
1000
ID 16A 22A 35A
800
VDS
L
DRIVER
600
RG
D.U.T
IAS
+ - VDD
A
VGS 20V
tp
400
0.01
Fig 12a. Unclamped Inductive Test Circuit
200
0 25 50 75 100 125 150
V(BR)DSS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHN7054, JANSR2N7394U
Pre-Irradiation
Foot Notes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 25V, starting TJ = 25C, L=0.82mH Peak IL = 35A, VGS =12V A I SD 35A, di/dt 150A/s, VDD 60V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with V DS Bias. 48 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2006
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