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2SK1381
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2--MOSIII)
2SK1381
Relay Drive, Motor Drive and DC-DC Converter Applications
4 V gate drive Low drain-source ON resistance High forward transfer admittance Low leakage current Enhancement-mode : RDS (ON) = 25 m (typ.) : |Yfs| = 33 S (typ.) : IDSS = 100 A (max) (VDS = 100 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 100 100 20 50 200 150 150 -55~150 Unit V V V A W C C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
Pulse (Note 1)
Drain power dissipation (Tc = 25C) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
2-16C1B
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit C / W C / W
Weight: 4.6 g (typ.)
Note 1: Please use devices on condition that the channel temperature is below 150C. This transistor is an electrostatic sensitive device. Please handle with caution.
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2002-09-02
2SK1381
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time tf toff Qg Qgs Qgd VDD 80 V, VGS = 10 V, ID = 50 A -- 60 -- Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 20 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 25 A VGS = 10 V, ID = 25 A VDS = 10 V, ID = 25 A Min -- -- 100 0.8 -- -- 20 -- -- -- -- -- Typ. -- -- -- -- 31 25 33 3700 580 1500 16 46 Max 50 100 -- 2.0 46 32 -- -- -- -- -- -- ns pF Unit nA A V V m S
Turn-off time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge
-- -- -- --
185 88 62 26
-- -- -- -- nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovered charge Symbol IDR IDRP VDSF trr Qrr Test Condition -- -- IDR = 50 A, VGS = 0 V IDR = 50 A, VGS = 0 V dIDR / dt = 50 A / s Min -- -- -- -- -- Typ. -- -- -- 280 0.56 Max 50 200 -1.6 -- -- Unit A A V ns C
Marking
K1381
Type
Lot Number Month (starting from alphabet A) Year (last number of the christian era)
2
2002-09-02
2SK1381
3
2002-09-02
2SK1381
4
2002-09-02
2SK1381
5
2002-09-02
2SK1381
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
6
2002-09-02

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