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| Silicon Bridge Rectifiers KBP200-G thru 2010-G (RoHS Device) Reverse Voltage: 50 ~ 1000 Volts Forward Current: 2.0 Amp Features: Diffused Junction Low Forward Voltage Drop High Reliability High Current Capability High Surge Current Capability Ideal for Printed Circuit Boards H J D E I G B +~~A C KBP Min. Max Dim 14.22 15.24 A B 11.68 10.67 C 11.68 12.70 D 4.57 5.08 3.60 4.10 E 2.16 2.67 G 12.70 H 0.88 0.76 J 1.52 I All Dimension in mm KBP Mechanical Data: Case: Molded Plastic Terminals: Plated Leads Solderable Per MIL STD-202, Method 208 Weight: 1.7 grams (approx.) Mounting position: Any Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate currently by 20%. Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note1) @ TA = 50C Symbol KBP 200-G KBP 201-G KBP 202-G KBP KBP KBP KBP 204-G 206-G 208-G 2010-G UNIT VRRM VRWM VR VR(RMS) Io 35 70 140 280 2.0 420 560 700 V A 50 100 200 400 600 800 1000 V Non-Repetitive Peak Forward Surge Current 8.3ms Single IFSM half-sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ IF=2.0A Peak Reverse Current @ TA=25C At Rated DC Blocking Voltage @ TA=100C Rating for Fusing (t<8.3ms) Typical Thermal Resistance (Note3) Operating and Storage Temperature Range Typical Junction Capacitance per element (Note2) Note: 60 A VFM IRM I2t RJA TJ, TSTG CJ 1.1 10 500 15 30 -55 to +160 25 V uA A2S K/W C pF 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C. 3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad. "-G" suffix designated RoHS compliant version Comhip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1 Silicon Bridge Rectifiers KBP200-G thru 2010-G (RoHS Device) Rating and Characteristic Curves (KBPP200-G ~ KBP2010-G) 2.0 10 TJ = 150C 1.0 TJ = 25C 1.5 1.0 Io, Instantaneous Fwd Current (A) Io, Average Rectified Current (A) 0.5 0.1 0 0 75 150 T, Temperature (C) Flg1. Forward Current Derating Curve 225 Pulse Width =300 uS 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, Instantaneous Fwd Voltage (V) Flg2. Typical Fwd Characteristics 100 TJ=150C Single Half Sine Wave (JEDEC Nethod) IJ, Junction Capacitance (pF) 100 TJ=25C 80 IFSM, Peak Fwd Surge Current (A) 60 10 40 20 0 1 10 Number of Cycles At 60Hz Flg3. Max Non-Repetitive Peak Fwd Surge Current 100 1 1 10 VR, Reverse Voltage (V) Flg 4. Typical Junction Capacitance 100 "-G" suffix designated RoHS compliant version Comhip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page2 Silicon Bridge Rectifiers KBP200-G thru 2010-G (RoHS Device) Rating and Characteristic Curves (KBPP200-G ~ KBP2010-G) 10,000 IR, Instantaneous Reverse Current (mA) (A) 1000 TJ = 150C 100 TJ = 125C TJ = 100C 10 1.0 TJ = 25C 0.1 0.01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Flg5. Typical Reverse Characteristics "-G" suffix designated RoHS compliant version Comhip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page3 |
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