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| SEMICONDUCTOR TECHNICAL DATA HIGH SPEED SWITCHING. KDR378 SCHOTTKY BARRIER TYPE DIODE FEATURES Low Forward Voltage : VF=0.24(Typ.) IF=5mA E M B M 2 D 3 DIM A B C D E G H 1 MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN A J G MAXIMUM RATING (Ta=25 CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-repetitive Peak Surge Current Power Dissipation Junction Temperature Storage Temperature Range pad dimension of 4 4mm. ) SYMBOL VRRM VR IO IFSM PD Tj Tstg RATING 15 10 0.1 1 200* 125 -55 125 UNIT C J K H N K N L M N V V A A mW L 3 1. ANODE 1 2. ANODE 2 3. CATHODE 2 1 * : Mounted on a glass epoxy circuit board of 20 20mm, USM Marking X3 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance IR CT ) TEST CONDITION IF=1mA IF=5mA IF=100mA VR=10V VR=0V, f=1MHz MIN. TYP. 0.19 0.24 0.39 14 MAX. 0.50 20 30 A pF V UNIT SYMBOL 2001. 11. 29 Revision No : 2 1/2 KDR378 I F - VF 10 FORWARD CURRENT I F (A) 10 10 10 10 10 1 0 40 80 120 160 200 240 280 320 360 400 FORWARD VOLTAGE V F (mV) 6 I R - VR 10 REVERSE CURRENT I R (A) Ta=25 C Ta=25 C 5 4 5 3 3 2 1 0 2 4 6 8 10 REVERSE VOLTAGE V R (V) C T - VR TERMINAL CAPACITANCE C T (pF) 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 f=1MHz Ta=25 C REVERSE VOLTAGE VR (V) 2001. 11. 29 Revision No : 2 2/2 |
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