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| SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. KMB2D0N60SA N-Ch Trench MOSFET L E B L FEATURES A H 2 G 1 3 VDSS=60V, ID=2A Drain-Source ON Resistance RDS(ON)=160m (Max.) @ VGS=10V RDS(ON)=220m (Max.) @ VGS=4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N K M SOT-23 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage ) SYMBOL VDSS VGSS N-Ch 60 20 2.0 ID 1.6 IDP IS PD 0.8 Tj Tstg RthJA 0.6mm) 150 -55 150 100 /W 10 1.0 1.25 W A A UNIT V V DC@TA=25 Drain Current DC@TA=70 Pulsed Drain-Source-Diode Forward Current Drain Power Dissipation TA=25 TA=70 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note : Package Mounted on 99.5% Alumina (10 8 PIN CONNECTION (TOP VIEW) KND D 3 3 2 1 2 1 G S 2007. 4. 17 Revision No : 0 J D 1/5 KMB2D0N60SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage 2Drain-Source ON Resistance BVDSS IDSS VGS=0V, VDS=60V, Tj=55 IGSS Vth RDS(ON)* VGS=4.5V, ID=1.7A On-State Drain Current Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-On Deley Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage NOTE 1> * : Pulse Test : Pulse width <300 VSDF* VGS=0V, IDR=1A 0.77 1.2 V Ciss Coss Crss Qg* Qgs* Qgd* td(on)* tr* td(off)* tr* VDD=30V, VGS=4.5V ID=-1A, RG=6 (NOTE 1) ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL IDS=250 A, VGS=0V, VGS=0V, VDS=60V 60 1.5 6 4 - 125 155 4.6 0.5 V A 10 100 160 m 220 S nA V VGS= 20V, VDS=0V VDS=VGS, ID=250 A VGS=10V, ID=2A ID(ON)* gfs* VGS VGS 10V, VDS=4.5V 4.5V, VDS=4.5V VDS=4.5V, ID=2.0A VDS=25V, f=1MHz, VGS=OV VDS=30V, VGS=10V, ID=2A - 240 50 15 4.8 0.8 1.0 7 10 17 6 10 15 20 ns 35 15 nC pF , Duty cycle < 2% 2007. 4. 17 Revision No : 0 2/5 KMB2D0N60SA Fig1. ID - VDS Drain Source On Resistance RDS(ON) () 10 10V 5.0V Common Source Tc=25 C Pulse Test 4.5V Fig2. RDS(ON) - ID 500 400 300 200 VGS=10V Common Source Tc=25 C Pulse Test Drain Current ID (A) 8 6 4 VGS=4.5V 4.0V 2 0 0 2 4 6 8 3.5V VGS=3V 100 0 0 4 8 12 16 10 Drain - Source Voltage VDS (V) Drain - Current ID (A) Fig3. ID - VGS 10 Common Source 250 Fig4. RDS(ON) - Tj Common Source VDS=10V, ID=2A Pulse Test Drain Current ID (A) 8 6 4 VDS=5V Pulse Test Normalized Drain-Source On-Resistance RDS(ON) (m) 200 150 100 50 25 C 2 0 0 1 2 125 C -55 C 3 4 5 0 -75 -50 -25 0 25 50 75 100 125 150 Gate-Source Volatage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Gate Threshold Voltage Vth (V) 5 Common Source 10 8 6 4 2 0 0 0.4 Fig6. IS-VSDF Common Source Tc=25 C Pulse Test 3 2 1 0 -75 -50 -25 0 25 50 75 100 125 150 Drain Current ID (A) VGS=VDS ID=250A 4 Pulse Test 0.8 1.2 1.6 2.0 Junction Temperature Tj ( C ) Source - Drain Forward Voltage VSDF (V) 2007. 4. 17 Revision No : 0 3/5 KMB2D0N60SA Fig7. Transient Thermal Response Curve NORMALIZED TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PDM t1 t2 - Duty = t/T 0.01 10-3 10-2 10-1 100 10 102 500 TIME t (sec) 2007. 4. 17 Revision No : 0 4/5 KMB2D0N60SA Fig8. Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA VDS VGS Q Qgs Qgd Qg Fig9. Resistive Load Switching RL VDS 90% 0.5 VDSS 6 VDS 10 V VGS 10% td(on) td(off) VGS tr ton tf toff 2007. 4. 17 Revision No : 0 5/5 |
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