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| Datasheet File OCR Text: |
| SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. A1 A KRC827E~KRC829E EPITAXIAL PLANAR NPN TRANSISTOR B B1 Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. C 1 6 C 2 5 3 4 P P DIM A A1 B B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 EQUIVALENT CIRCUIT OUT R1 R2 BIAS RESISTOR VALUES TYPE NO. KRC827E 10 22 47 47 47 22 1. 2. 3. 4. 5. 6. Q1 Q2 Q2 Q2 Q1 Q1 COMMON (EMITTER) COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) IN (BASE) OUT (COLLECTOR) J R1(k ) R2(k ) IN KRC828E KRC829E COMMON H TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 D Q2 MAXIMUM RATING (Ta=25 Output Voltage ) SYMBOL KRC827E 829E KRC827E VO 1 2 3 CHARACTERISTIC RATING 50 30, -6 UNIT V Input Voltage KRC828E KRC829E VI 40, -7 40,-15 V Output Current Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. KRC827E 829E IO PD * Tj Tstg 100 200 150 -55 150 mA mW Marking MARK SPEC TYPE MARK KRC827E YH KRC828E YI KRC829E YJ 1 2 3 6 5 4 Type Name 2002. 1. 24 Revision No : 1 1/4 KRC827E~KRC829E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Output Cut-off Current KRC827E 829E SYMBOL IO(OFF) TEST CONDITION VO=50V, VI=0 MIN. 80 GI VO=5V, IO=10mA 80 70 VO(ON) IO=10mA, II=0.5mA VI(ON) VO=0.2V, IO=5mA 0.5 VI(OFF) VO=5V, IO=0.1mA 0.6 1.5 fT * VO=10V, IO=5mA II VI=5V tr VO=5V, VIN=5V RL=1k tf TYP. 150 150 140 0.1 1.2 1.8 3.0 0.75 0.88 1.82 200 0.05 0.12 0.26 2.0 2.4 1.5 0.36 0.4 0.41 MAX. 500 0.3 1.8 2.6 5.8 0.88 0.36 0.16 S mA MHz V V V UNIT nA KRC827E DC Current Gain KRC828E KRC829E Output Voltage KRC827E 829E KRC827E Input Voltage (ON) KRC828E KRC829E KRC827E Input Votlage (OFF) KRC828E KRC829E Transition Frequency KRC827E 829E KRC827E Input Current KRC828E KRC829E KRC827E Rise Time KRC828E KRC829E KRC827E Switching Time Storage Time KRC828E KRC829E KRC827E Fall Time KRC828E KRC829E tstg Note : * Characteristic of Transistor Only. 2002. 1. 24 Revision No : 1 2/4 KRC827E~KRC829E 50 OUTPUT CURRENT I O (mA) 30 KRC827E VO =0.2V I O - V I(ON) -25 25 3k OUTPUT CURRENT I O (A) KRC827E I O - V I(OFF) 100 1k C Ta=1 00 C 5 3 500 300 Ta=25 C Ta=-25 C 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) 100 50 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INPUT OFF VOLTAGE V I(OFF) (V) VO =5V Ta=10 0 50 30 OUTPUT CURRENT I O (mA) KRC828E VO =0.2V I O - V I(ON) 3k OUTPUT CURRENT I O (A) KRC828E I O - V I(OFF) 1k 0C 5C Ta=2 Ta=1 5 3 00 C Ta= 10 500 300 Ta=25 C Ta=-25 C 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) 100 50 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INPUT OFF VOLTAGE V I(OFF) (V) VO =5V 50 30 OUTPUT CURRENT I O (mA) KRC829E VO =0.2V I O - V I(ON) 3k OUTPUT CURRENT I O (A) KRC829E I O - V I(OFF) 1k 5C Ta=2 Ta =1 5 3 Ta=25 C Ta=-25 C 300 1 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT ON VOLTAGE V I(ON) (V) 100 50 30 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 INPUT OFF VOLTAGE V I(OFF) (V) VO =5V 2002. 1. 24 Revision No : 1 Ta= 00 100 C 500 Ta=25 C 10 C Ta=- 25 C 10 Ta=2 5C Ta=-2 5C 10 3/4 KRC827E~KRC829E 1k DC CURRENT GAIN G I 500 300 KRC827E VO =5V G I - IO 1k Ta=100 C DC CURRENT GAIN G I 500 300 KRC828E VO =5V G I - IO Ta=100 C Ta=25 C Ta=-25 C 100 50 Ta=25 C Ta=-25 C 100 50 30 1 3 10 30 100 OUTPUT CURRENT IO (mA) 20 1 3 10 30 100 OUTPUT CURRENT IO (mA) G I - IO 1k DC CURRENT GAIN G I 500 300 Ta=100 C KRC829E VO =5V 100 50 Ta=25 C Ta=-25 C 20 1 3 10 30 100 OUTPUT CURRENT IO (mA) 2002. 1. 24 Revision No : 1 4/4 |
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