 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| KSC5054 KSC5054 High Speed High Voltage Switching Industrial Use NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IB IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature 1 I-PAK 1. Base 2. Collector 3. Emitter Value 500 400 7 0.25 0.5 1 1 10 150 - 55 ~ 150 Units V V V A A A W W C C * PW300s, Duty Cycle10% Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER IEBO ICEX1 ICEX2 hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector Cut-off Current Test Condition IC = 0.3A, IB1 = 0.06A, L = 10mH IC = 0.3A, IB1 = -IB2 = 0.06A VBE(off) = -5V, L = 10mH IC = 0.6A, IB1 = 0.2, L = 10mH IB2 = -0.06, VBE(off) = -5V VCB = 400V, IE = 0 VCE = 400V, RBE = 51, TC = 125C VEB = 5V, IC = 0 VCE = 400V, VBE (off) = -1.5V VCE = 400V, VBE (off) = -1.5V @ TC = 125C VCE = 5V, IC = 0.05A VCE = 5V, IC = 0.3A IC = 0.3A, IB = 0.06A IC = 0.3A, IB = 0.06A VCC = 150V, IC = 0.3A IB1 = -IB2 = 0.06A, RL = 500 PW = 50s, Duty Cycle2% 20 10 Min. 400 450 400 10 1 10 10 1 80 1 1.2 1 2.5 1 V V s s s Max. Units V V V A mA A A mA DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time * Pulse Test: PW350s, Duty Cycle2% Pulsed hFE Classification Classification hFE1 (c)2001 Fairchild Semiconductor Corporation R 20 ~ 40 O 30 ~ 60 Y 40 ~ 80 Rev. A1, June 2001 KSC5054 Typical Characteristics 0.5 A mA I B = 45m I = 40mA B I B = 50 1000 VCE = 5V IC[A], COLLECTOR CURRENT 0.4 mA I B = 25 mA I B = 20 mA I B = 15 mA I B = 10 hFE, DC CURRENT GAIN A IB = 35m mA I B = 30 100 0.3 0.2 A IB = 5m 10 0.1 0.0 0 1 2 3 4 5 1 0.1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 10 IC = 5 IB IC = 5 IB1 = -5 IB2 tSTG, tF (s), TIME 1 VBE(sat) tstg 1 0.1 VCE(sat) VCE(sat) tf 0.01 0.1 1 10 100 1000 0.1 10 ton 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 10 1.0 IC[mA], COLLECTOR CURRENT IC(max). (Pulse) 1 10 Dis sip ati 1m s on Lim ite d 10 0 s s DC IC[A], COLLECTOR CURRENT 0.8 0.6 0.1 0.4 b S/ d ite Lim VCEO(sus) MAX. 0.01 VCEO(SUS) 0 100 200 300 400 1E-3 0.001 1 10 100 1000 0.0 500 VCE[V], COLLECTOR-EMITTER VOLTAGE V CE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area Figure 6. Reverse Bias Safe Operating Area (c)2001 Fairchild Semiconductor Corporation VCEX(SUS) Rev. A1, June 2001 0.2 KSC5054 Typical Characteristics (Continued) 160 16 140 14 120 PC(W), POWER DISSIPATION 125 150 175 200 12 dT(%), IC DERATING 100 10 80 S/b 8 60 Di ss ip at ion Lim ite d 6 40 Lim ite d 4 20 2 0 0 25 50 o 75 100 0 0 25 50 o 75 100 125 150 175 200 Tc[ C], CASE TEMPERATURE Tc[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Area Figure 8. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5054 Package Demensions I-PAK 6.60 0.20 5.34 0.20 (0.50) (4.34) (0.50) 0.50 0.10 2.30 0.20 0.20 0.20 0.60 0.70 0.10 6.10 0.20 0.80 0.20 1.80 MAX0.96 0.76 0.10 9.30 0.30 2.30TYP [2.300.20] 2.30TYP [2.300.20] 0.50 0.10 (c)2001 Fairchild Semiconductor Corporation 16.10 0.30 Dimensions in Millimeters Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
Price & Availability of KSC5054
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |